Neal T. Sullivan
Vice President of Technology at Arradiance Inc
SPIE Involvement:
Author | Instructor
Publications (24)

Proceedings Article | 10 May 2005 Paper
Proc. SPIE. 5752, Metrology, Inspection, and Process Control for Microlithography XIX
KEYWORDS: Electron beams, Silica, Imaging systems, Computer simulations, Scanning electron microscopy, Monte Carlo methods, Optical simulations, Selenium, Semiconducting wafers, Statistical modeling

Proceedings Article | 10 May 2005 Paper
Proc. SPIE. 5752, Metrology, Inspection, and Process Control for Microlithography XIX
KEYWORDS: Electronics, Polymers, Image processing, Image acquisition, Control systems, Monte Carlo methods, Line width roughness, Optical simulations, Line edge roughness, Photoresist processing

Proceedings Article | 24 May 2004 Paper
Proc. SPIE. 5375, Metrology, Inspection, and Process Control for Microlithography XVIII
KEYWORDS: Metrology, Electrons, Silicon, Scanning electron microscopy, Photoresist materials, Monte Carlo methods, Optical proximity correction, Critical dimension metrology, Line edge roughness, Semiconducting wafers

Proceedings Article | 24 May 2004 Paper
Proc. SPIE. 5375, Metrology, Inspection, and Process Control for Microlithography XVIII
KEYWORDS: Metrology, Calibration, Computer simulations, Atomic force microscopy, Scanning electron microscopy, Photoresist materials, Monte Carlo methods, Integrated circuits, Critical dimension metrology, Semiconducting wafers

Proceedings Article | 10 July 2003 Paper
Proc. SPIE. 5042, Design and Process Integration for Microelectronic Manufacturing
KEYWORDS: Metrology, Optical lithography, Image processing, Manufacturing, Diagnostics, Process control, Dimensional metrology, Critical dimension metrology, Semiconducting wafers, Edge roughness

Showing 5 of 24 publications
Proceedings Volume Editor (2)

Conference Committee Involvement (9)
Metrology, Inspection, and Process Control for Microlithography XXIII
23 February 2009 | San Jose, California, United States
Metrology, Inspection, and Process Control for Microlithography XXII
25 February 2008 | San Jose, California, United States
Metrology, Inspection, and Process Control for Microlithography XXI
26 February 2007 | San Jose, California, United States
Metrology, Inspection, and Process Control for Microlithography XX
20 February 2006 | San Jose, California, United States
Metrology, Inspection, and Process Control for Microlithography XIX
28 February 2005 | San Jose, California, United States
Showing 5 of 9 Conference Committees
Course Instructor
SC108: Fundamentals of Critical Dimension Metrology
Critical Dimension (CD) Metrology involves measurement of planar structures on semiconductor, mask and thin film head substrates. This full day course provides an overview of CD metrology emphasizing Scanning Electron Microscope (SEM) applications for process control and characterization. Metrology specifications and methods for estimating measurement performance for each application are discussed. An overview of image formation in SEM is presented with a discussion of system consequences. Other methods of CD measurement and future trends in CD Metrology are explored.
SIGN IN TO:
  • View contact details

UPDATE YOUR PROFILE
Is this your profile? Update it now.
Don’t have a profile and want one?

Advertisement
Advertisement
Back to Top