Mr. Nicolo Morgana Profile

Nicolo Morgana

Senior Staff Engineer at Infineon Technologies Dresden

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Author

Publications (19)

Proceedings Article | 19 September 2018 Paper

Revival of grayscale technique in power semiconductor processing under low-cost manufacturing constraints

Jens Schneider, Dieter Kaiser, Nicolo Morgana, Henning Feick, Marcel Heller

Proceedings Volume 10775, 107750W (2018) https://doi.org/10.1117/12.2326006

KEYWORDS: Photomasks, Photoresist processing, Grayscale lithography, Lithography, Semiconductor manufacturing, Manufacturing, Ions, Semiconducting wafers, Doping, Ion implantation

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Proceedings Article | 26 March 2015 Paper

Rigorous wafer topography simulation for investigating wafer alignment quality and robustness

Nicoló Morgana, Ulrich Klostermann, Juergen Preuninger, Itaru Kamohara, Dmitrii Gavrilin, Andreas Greiner, Detlef Hofmann, Holger Moeller

Proceedings Volume 9426, 94260S (2015) https://doi.org/10.1117/12.2086075

KEYWORDS: Optical alignment, Semiconducting wafers, Signal processing, Silicon, Oxides, Computer simulations, Manufacturing, Visualization, Metals, Etching

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Proceedings Article | 12 April 2013 Paper

Grayscale lithography: 3D structuring and thickness control

Marcel Heller, Dieter Kaiser, Jens Schneider, Maik Stegemann, Nicoló Morgana, Georg Holfeld, Daniel Sarlette

Proceedings Volume 8683, 868310 (2013) https://doi.org/10.1117/12.2008847

KEYWORDS: Etching, Oxides, Photoresist materials, Photomasks, Semiconducting wafers, Reactive ion etching, Grayscale lithography, Lithography, Ions, Atomic force microscopy

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SPIE Journal Paper | 1 January 2009

Double patterning down to k₁=0.15 with litho trim

Christoph Noelscher, Marcel Heller, Matthias Markert, Dietmar Temmler, Franck Jauzion-Graverolle, Nicolo Morgana, Ulrich Scheler, Bee-Kim Hong, Ulrich Egger, Vadim Timoshkov, Mirko Vogt

JM3, Vol. 8, Issue 01, 011005, (January 2009) https://doi.org/10.1117/12.10.1117/1.3066296

KEYWORDS: Etching, Double patterning technology, Critical dimension metrology, Amorphous silicon, Lithography, Scanning electron microscopy, Photomasks, Image processing, Cadmium, Silicon

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Proceedings Article | 1 April 2008 Paper

AltPSM contact hole application at DRAM 4xnm nodes with dry 193nm lithography

Thomas Henkel, Roderick Koehle, Nicolo Morgana, Molela Moukara, Franck Jauzion-Graverolle, Christoph Noelscher, Ralph Schlief, Mario Hennig, Ralf Neubauer

Proceedings Volume 6924, 692446 (2008) https://doi.org/10.1117/12.772806

KEYWORDS: Photomasks, Optical proximity correction, Etching, Atrial fibrillation, Printing, Calibration, 3D modeling, 193nm lithography, Lithography, Mask making

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Proceedings Article | 16 November 2007 Paper

3D mask modeling with oblique incidence and mask corner rounding effects for the 32nm node

Jean-Luc Di-Maria, Vincent Farys, Bill Wilkinson, Amandine Borjon, Isabelle Schanen, Jérôme Belledent, Florent Vautrin, Gurwan Kerrien, Yves Rody, Christian Gardin, Frank Sundermann, Mazen Saied, Laurent LeCam, Franck Foussadier, Jonathan Planchot, Frédéric Robert, Emek Yesilada, Christophe Couderc, Yorick Trouiller, Catherine Martinelli, Nicolo Morgana, Jean Christophe Urbani

Proceedings Volume 6730, 673050 (2007) https://doi.org/10.1117/12.752613

KEYWORDS: Photomasks, Optical proximity correction, 3D modeling, Semiconducting wafers, Diffraction, Scattering, Near field, Lithographic illumination, Systems modeling, Near field optics

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Proceedings Article | 14 May 2007 Paper

Characterization of inverse SRAF for active layer trenches on 45-nm node

Jean-Damien Chapon, Emek Yesilada, Amandine Borjon, Christophe Couderc, Vincent Farys, Jean-Christophe Urbani, Frank Sundermann, Bill Wilkinson, Jonathan Planchot, Frédéric Robert, Florent Vautrin, Jean-Luc Di-Maria, Nicolo Morgana, Mazen Saied, Christian Gardin, Catherine Martinelli, Franck Foussadier, Gurwan Kerrien, Jérôme Belledent, Patrick Montgomery, Laurent LeCam, Yves Rody, Yorick Trouiller

Proceedings Volume 6607, 66071C (2007) https://doi.org/10.1117/12.728960

KEYWORDS: SRAF, Optical proximity correction, Printing, Optical lithography, Silicon, Photomasks, Semiconducting wafers, Inspection, Optical simulations, Lithography

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Proceedings Article | 3 May 2007 Paper

OPC structures for maskshops qualification for the CMOS65nm and CMOS45nm nodes

Gurwan Kerrien, Vincent Farys, Frank Sundermann, Mazen Saied, Catherine Martinelli, Jean-Luc Di Maria, Patrick Montgomery, Franck Foussadier, Yves Rody, Jonathan Planchot, Emek Yesilada, Jean-Christophe Urbani, Christian Gardin, Bill Wilkinson, Amandine Borjon, Laurent LeCam, Jérôme Belledent, Christophe Couderc, Nicolo Morgana, Florent Vautrin, Frederic Robert, Yorick Trouiller

Proceedings Volume 6533, 65330E (2007) https://doi.org/10.1117/12.736927

KEYWORDS: Optical proximity correction, Reticles, Metals, Photoresist processing, Semiconducting wafers, Critical dimension metrology, Metrology, Manufacturing, Cadmium, Semiconductors

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Several qualification stages are required for new maskshop tools, first step is done by the maskshop internally. Taking a new writer for example, the maskshop will review the basic factory and site acceptance tests, including CD uniformity, CD linearity, local CD errors and registration errors. The second step is to have dedicated OPC (Optical Proximity Correction) structures from the wafer fab. These dedicated OPC structures will be measured by the maskshop to get a reticle CD metrology trend line. With this trend line, we can: - ensure the stability at reticle level of the maskshop processes - put in place a matching procedure to guarantee the same OPC signature at reticle level in case of any internal maskshop process change or new maskshop evaluation. Changes that require qualification could be process changes for capacity reasons, like introducing a new writer or a new manufacturing line, or for capability reasons, like a new process (new developer tool for example) introduction. Most advanced levels will have dedicated OPC structures. Also dedicated maskshop processes will be monitored with these specific OPC structures. In this paper, we will follow in detail the different reticle CD measurements of dedicated OPC structures for the three advanced logic levels of the 65nm node: poly level, contact level and metal level. The related maskshop's processes are - for poly: eaPSM 193nm with a nega CAR (Chemically Amplified Resist) process for Clear Field L/S (Lines & Space) reticles - for contact: eaPSM 193nm with a posi CAR process for Dark Field Holes reticles - for metal1: eaPSM 193nm with a posi CAR process for Dark Field L/S reticles. For all these structures, CD linearity, CD through pitch, length effects, and pattern density effects will be monitored. To average the metrology errors, the structures are placed twice on the reticle. The first part of this paper will describe the different OPC structures. These OPC structures are close to the DRM (Design Rule Manual) of the dedicated levels to be monitored. The second part of the paper will describe the matching procedure to ensure the same OPC signature at reticle level. We will give an example of an internal maskshop matching exercise, which could be needed when we switched from an already qualified 50 KeV tool to a new 50 KeV tool. The second example is the same matching exercise of our 65nm OPC structures, but with two different maskshops. The last part of the paper will show first results on dedicated OPC structures for the 45nm node.

Proceedings Article | 27 March 2007 Paper

Three-dimensional mask effects and source polarization impact on OPC model accuracy and process window

F. Robert, A. Borjon, C. Gardin, F. Vautrin, J. L. Di-Maria, L. Le-Cam, Vincent Farys, N. Morgana, C. Couderc, F. Sundermann, J. C. Urbani, F. Foussadier, C. Martinelli, B. Wilkinson, J. Planchot, Y. Trouiller, I. Schanen, G. Kerrien, E. Yesilada, J. Belledent, P. K. Montgomery, Y. Rody, M. Saied

Proceedings Volume 6520, 65204Q (2007) https://doi.org/10.1117/12.715120

KEYWORDS: 3D modeling, Photomasks, Optical proximity correction, Polarization, Process modeling, Lithium, Optical lithography, Information technology, Semiconducting wafers, Semiconductors

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Proceedings Article | 21 June 2006 Paper

Polarization effects: EAPSM vs. TT EAPSM

Michael Cangemi, Marc Cangemi, Nicoló Morgana, Bryan Kasprowicz, Will Conley

Proceedings Volume 6281, 628109 (2006) https://doi.org/10.1117/12.692729

KEYWORDS: Photomasks, Polarization, Etching, Manufacturing, Lithography, Optical lithography, Plasma etching, Plasma, Semiconducting wafers, Chromium

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Proceedings Article | 21 June 2006 Paper

Manufacturability and printability of AAPSM with transparent etch stop layer

Rand Cottle, Rudi De Ruyter, Michael Cangemi, Nicolo Morgana, Pierre Sixt, Leonardus Leunissen, Bryan Kasprowicz, Vicky Philipsen, Marc Cangemi

Proceedings Volume 6281, 62810T (2006) https://doi.org/10.1117/12.692803

KEYWORDS: Etching, Quartz, Photomasks, Semiconducting wafers, Polarization, Manufacturing, Chromium, Reticles, Lithography, Phase shifts

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Phase-shift mask (PSM) technology in combination with 193nm illumination remains a viable option for high contrast imaging towards 45nm half-pitch applications. The advent of hyper NA (immersion) lithography increases the imaging sensitivity towards the photomask properties, such as mask-induced polarization. In addition, the use of PSM technology implies taking into account the inherent photomask topography effects for a balanced through pitch imaging. A good quartz etch depth control of +/-1^o through pitch is required for optimized wafer imaging [1]. Therefore, a new PSM material stack was proposed based on a transparent etch stop layer (TESL) in order to meet the stringent phase depth requirements beyond 65nm half-pitch [2]. This extra layer allows over-etching of the quartz, resulting in a good etch depth linearity and uniformity. This study examines the manufacturability and printability of TESL-based masks. We examine the effect of an improved quartz etch depth linearity on the through-pitch process windows for a TESL-based alternating aperture (AA)PSM. Moreover, due to the different stack of photomask material compared to a classical photomask blank, the impact on printability is investigated by simulations, AIMS and wafer imaging. The image imbalance compensation by trench biasing needs to be optimized for through-pitch process windows. The actual depth and line width of the structures is systematically probed within the photomask field. Based on photomask metrology data, rigorous electro-magnetic field simulations are compared to wafer prints, obtained on an ASML XT1250Di ArF immersion scanner working with a 0.85NA projection lens and to AIMS results from Zeiss AIMS fab 193i. Furthermore, feature sizes on the order of the lithography wavelength induce photomask polarization effects in the imaging path [3]. The degree of polarization is compared to the polarization behavior of a conventional PSM. In summary, this study assesses the capability of TESL PSM towards the 65nm node through-pitch imaging.

Proceedings Article | 21 March 2006 Paper

High transmission mask technology for 45nm node imaging

Chris Progler, Will Conley, Young-Mog Ham, Bernie Roman, Nicoló Morgana, Kevin Lucas, Matt Lassiter, Mike Cangemi, Marc Cangemi, Wei Wu, Bryan Kasprowicz, Lloyd Litt, Jonathan Cobb, Rand Cottle

Proceedings Volume 6154, 615411 (2006) https://doi.org/10.1117/12.659353

KEYWORDS: Photomasks, Polarization, Etching, Plasma etching, Manufacturing, Plasma, Semiconducting wafers, Chromium, Lithography, Chlorine

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Proceedings Article | 15 March 2006 Paper

Optical properties and process impacts of high transmission EAPSM

Pat Martin, Nicolo Morgana, Bryan Kasprowicz, Young Mog Ham, Chris Progler, Pierre Sixt, Mike Cangemi

Proceedings Volume 6154, 615413 (2006) https://doi.org/10.1117/12.659238

KEYWORDS: Photomasks, Critical dimension metrology, Optical proximity correction, Semiconducting wafers, Lithography, Chromium, Polarization, Image processing, SRAF, Resolution enhancement technologies

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Proceedings Article | 15 March 2006 Paper

High transmission mask technology for 45nm node imaging

Mike Cangemi, Bryan Kasprowicz, Wei Wu, Marc Cangemi, Nicoló Morgana, Will Conley, Bernie Roman, Jonathan Cobb, Rand Cottle, Young-Mog Ham, Chris Progler, Lloyd Litt, Kevin Lucas, Matt Lassiter

Proceedings Volume 6154, 61541D (2006) https://doi.org/10.1117/12.659390

KEYWORDS: Photomasks, Polarization, Etching, Plasma etching, Manufacturing, Plasma, Semiconducting wafers, Chromium, Lithography, Chlorine

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Proceedings Article | 12 May 2005 Paper

Tunable transmission phase mask options for 65/45nm node gate and contact processing

Lloyd Litt, Nicolo Morgana, Christopher Progler, Bernie Roman, Will Conley, Marc Cangemi, Wei Wu, Michael Cangemi, Rand Cottle, Young-Mog Ham, Jonathan Cobb, Bryan Kasprowicz

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.601011

KEYWORDS: Photomasks, Manufacturing, Etching, Plasma etching, Lithography, Chromium, Phase shifts, Reticles, Semiconducting wafers, Sputter deposition

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Proceedings Article | 12 May 2005 Paper

Defect printability and inspectability of Cr-less phase-shift masks for the 70nm node

J. Thiele, A. Birnstein, T. Witte, N. Schmidt, J. Heumann, C. Aquino, M. Hennig, K. Park, N. Morgana, J. Schramm, R. Pforr

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.601568

KEYWORDS: Photomasks, Quartz, Semiconducting wafers, Inspection, Bridges, Defect inspection, Resolution enhancement technologies, Scanning electron microscopy, Critical dimension metrology, Manufacturing

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Proceedings Article | 28 May 2004 Paper

Hard phase-shifting masks for the 65-nm node: a performance comparison

Jens Weckesser, Joerg Thiele, Roderick Koehle, Mario Hennig, Rainer Pforr, Nicolo Morgana

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.534091

KEYWORDS: Photomasks, Critical dimension metrology, Phase shifts, Printing, Etching, Lithography, Optical lithography, Chromium, Resolution enhancement technologies, Scanning electron microscopy

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Proceedings Article | 28 August 2003 Paper

Qualification of alternating PSM: defect inspection analysis in comparison to wafer printing results

Wolfgang Dettmann, Mardjan Zarrabian, Martin Verbeek, Roderick Koehle, Mario Hennig, Jens Weckesser, Nicolo Morgana, Jan Heumann, Tanja Hagner, Stephen Rahn

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504202

KEYWORDS: Photomasks, Quartz, Inspection, Phase shifts, Defect inspection, Lithography, Semiconducting wafers, Scanning electron microscopy, Printing, Bridges

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Proceedings Article | 26 June 2003 Paper

Full-level alternating PSM for sub-100nm DRAM gate patterning

Nicolo Morgana, Joerg Thiele, Rainer Pforr, Wolfgang Dettmann, Burkhard Ludwig, Mario Hennig, Marco Ahrens, Roderick Koehle

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485521

KEYWORDS: Critical dimension metrology, Photomasks, Optical lithography, Lithography, Optical proximity correction, Mask making, Phase shifts, Semiconducting wafers, Etching, Resolution enhancement technologies

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Showing 5 of 19 publications

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