Prof. Nikolaus Dietz Profile

Prof. Nikolaus Dietz

Professor of Physics at Georgia State Univ

Area of Expertise:

Solid State Physics , radiation interaction with matter , real-time optical diagnostics , Thin film growth , group III-nitride compound semiconductors , group II-IV-V2 chalcopyrites

Websites:

Company Website

Publications (15)

Proceedings Article | 10 October 2017 Paper

Paper

Growth and characterization of GaN/AlGaN heterostructures on GaN substrate templates

Lance Hubbard, Nikolaus Dietz, Mark Vernon, Ramon Collazo, Seiji Mita, Ronny Kirste, Zlatko Sitar, Vincent Woods

Proceedings Volume 10378, 103780D (2017) https://doi.org/10.1117/12.2274932

KEYWORDS: Gallium nitride, Avalanche photodetectors, Aluminum nitride, Aluminum, Heterojunctions, Metalorganic chemical vapor deposition, Instrument modeling, Sensors, Reflectivity, Doping

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Proceedings Article | 2 November 2016 Presentation

Presentation

Infrared nanoscopy of In-rich InGaN epilayers (Conference Presentation)

Daniel Seidlitz, Alireza Fali, Indika Matara Kankanamge, Dorian Alden, Ramon Collazo, Axel Hoffmann, Nikolaus Dietz, Yohannes Abate

Proceedings Volume 9954, 995408 (2016) https://doi.org/10.1117/12.2238043

KEYWORDS: Indium gallium nitride, Infrared radiation, Near field scanning optical microscopy, Dielectrics, Near field optics, Heterojunctions, Infrared imaging, Spectroscopy, Imaging spectroscopy, Super resolution microscopy

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Proceedings Article | 7 September 2016 Paper

Paper

Effect of AlN buffer layers on the structural and optoelectronic properties of InN/AlN/Sapphire heterostructures grown by MEPA-MOCVD

Indika M. K., Daniel Seidlitz, Alireza Fali, Brendan Cross, Yohannes Abate, Nikolaus Dietz

Proceedings Volume 9954, 99540R (2016) https://doi.org/10.1117/12.2237957

KEYWORDS: Plasma, Optoelectronics, FT-IR spectroscopy, Indium nitride, Aluminum nitride, Sapphire, Nitrogen, Raman spectroscopy, Atomic force microscopy, Dielectrics

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Proceedings Article | 8 September 2015 Paper

Paper

Optoelectronic and structural properties of InGaN nanostructures grown by plasma-assisted MOCVD

Daniel Seidlitz, M. K. Senevirathna, Y. Abate, A. Hoffmann, N. Dietz

Proceedings Volume 9571, 95710P (2015) https://doi.org/10.1117/12.2188612

KEYWORDS: Plasma, Indium nitride, Indium gallium nitride, Raman spectroscopy, Nitrogen, FT-IR spectroscopy, Molybdenum, Optoelectronics, Near field scanning optical microscopy, Dielectrics

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Proceedings Article | 4 February 2013 Open Access

Open Access

Paper

Room temperature GaN-based spin polarized emitters

A. Melton, B. Kucukgok, Zhiqiang Liu, N. Dietz, N. Lu, I. Ferguson

Proceedings Volume 8631, 863104 (2013) https://doi.org/10.1117/12.2012586

KEYWORDS: Gadolinium, Magnetism, Gallium nitride, Light emitting diodes, Oxygen, Magnetic semiconductors, Ions, Electroluminescence, Polarization, Ferromagnetics

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Proceedings Article | 15 October 2012 Paper

Paper

Effect of nucleation period on the physical properties of InN epilayers

S. Gamage, M. K. Senevirathna, R. Atalay, A. G. Perera, A. Melton, I. Ferguson, N. Dietz

Proceedings Volume 8484, 84841I (2012) https://doi.org/10.1117/12.930363

KEYWORDS: Indium nitride, Raman spectroscopy, Spectroscopy, Dielectrics, X-ray diffraction, FT-IR spectroscopy, Optoelectronics, Reflectance spectroscopy, Chemical vapor deposition, Nitrogen

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Proceedings Article | 15 October 2012 Paper

Paper

Effect of V/III molar ratio on the structural and optical properties of InN epilayers grown by HPCVD

Ramazan Atalay, Max Buegler, Sampath Gamage, M. K. Senevirathna, Bahadir Küçükgök, Andrew Melton, Axel Hoffmann, A. G. Unil Perera, Ian Ferguson, Nikolaus Dietz

Proceedings Volume 8484, 84840X (2012) https://doi.org/10.1117/12.930199

KEYWORDS: Indium nitride, Raman spectroscopy, Phonons, FT-IR spectroscopy, Infrared spectroscopy, Optoelectronics, Crystals, X-ray diffraction, Reflectance spectroscopy, Spectroscopy

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Proceedings Article | 18 August 2010 Paper

Paper

Reactor pressure: growth temperature relation for InN epilayers grown by high-pressure CVD

M. Buegler, S. Gamage, R. Atalay, J. Wang, I. Senevirathna, R. Kirste, T. Xu, M. Jamil, I. Ferguson, J. Tweedie, R. Collazo, A. Hoffmann, Z. Sitar, N. Dietz

Proceedings Volume 7784, 77840F (2010) https://doi.org/10.1117/12.860952

KEYWORDS: Indium nitride, Chemical vapor deposition, Raman spectroscopy, Crystals, Infrared spectroscopy, Indium, Heterojunctions, Gallium nitride, Nitrogen, Sapphire

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Proceedings Article | 28 August 2009 Paper

Paper

Al fraction induced effects on the capacitance characteristics of n+-GaN/AlxGa1-xN IR detectors

Laura Byrum, Gamini Ariyawansa, Ranga Jayasinghe, Nikolaus Dietz, A. G. Unil Perera, Steven Matsik, Ian Ferguson, Andrew Bezinger, Hui Chun Liu

Proceedings Volume 7467, 74670W (2009) https://doi.org/10.1117/12.828156

KEYWORDS: Capacitance, Aluminum, Sensors, Infrared detectors, Gallium nitride, Heterojunctions, Absorption, Ultraviolet radiation, Infrared sensors, Interfaces

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Proceedings Article | 18 August 2009 Paper

Paper

Optical and structural properties of InN grown by HPCVD

M. Buegler, M. Alevli, R. Atalay, G. Durkaya, I. Senevirathna, M. Jamil, I. Ferguson, N. Dietz

Proceedings Volume 7422, 742218 (2009) https://doi.org/10.1117/12.828163

KEYWORDS: Indium nitride, Raman spectroscopy, Crystals, Sapphire, Chemical vapor deposition, Luminescence, Sensors, Gallium nitride, X-ray diffraction, Chemical analysis

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Proceedings Article | 26 September 2007 Paper

Paper

Dual band HEIWIP detectors with nitride materials

A. Unil Perera, Gamini Ariyawansa, Ranga Jayasinghe, Laura Byrum, Nikolaus Dietz, Steven Matsik, Ian Ferguson, Hui Luo, Andrew Bezinger, Hui Chun Liu

Proceedings Volume 6678, 66780S (2007) https://doi.org/10.1117/12.734731

KEYWORDS: Ultraviolet radiation, Sensors, Infrared radiation, Infrared sensors, Ultraviolet detectors, Absorption, Modulation, Gallium nitride, Aluminum, Etching

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Proceedings Article | 21 September 2005 Paper

Paper

Solid-state molecular sensors (SSMS) based on confined III-IV-V2 multi-functional heterostructures

Nikolaus Dietz, Frank Madarasz, Ramarao Inguva

Proceedings Volume 5912, 59120J (2005) https://doi.org/10.1117/12.613191

KEYWORDS: Sensors, Heterojunctions, Waveguides, Second-harmonic generation, Silicon, Optical parametric oscillators, Gallium, Nonlinear optics, Phase matching, Ferromagnetics

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Nonlinear confined (optical and/or electrical) heterostructures based on III-IV-V2 chalcopyrite (CP) thin films and/or embedded CP materials offer unique advantages over group III-V and IV linear structures. These stem from the birefringent nature and the lower crystal symmetry of the CP semiconductors. As an example, this property is responsible three-wave nonlinear parametric processes (a second-order nonlinear effect) and very high values of the second-order hyperpolarizabilities. The recent discovery of room-temperature ferromagnetism in diluted magnetic CP semiconductors adds an additional functionality to this material system that makes possible the construction of novel magneto-optical device structures based on ferromagnetic nanocomposites and confined ferromagnetic heterostructures, which can be embedded in confined birefringent layers. Such structures are the basic elements for advanced "Solid-State Molecular Sensor" (SSMS) device structures. Rugged, miniaturized SSMS structures can be constructed which are based on a unique, optically confined birefringent, group II-IV-V2 CP heterostructure technology. This system identifies target chemicals and biological molecules in real-time under ambient conditions. It can detect and discriminate between numerous and varied molecular species by employing resonant phase- and/or amplitude sensitive detection over a large, tunable spectral range. The SSMS can be made sensitive to a specific group of molecules with appropriate phase matching conditions. Its response is unlike that of a linear waveguide sensor in two primary areas: change of frequency output, and intensity of the output light generated. Both signals are generated in a nonlinear second harmonic generation process sensitive to small changes in the phase matching conditions. Potential applications include compact ultra-sensitive sensors, nonlinear optical modulators, magnetic photonic crystals, magneto-optical switches, detectors, and spin electronic devices.

Proceedings Article | 21 September 2005 Paper

Paper

Advanced computational modeling for growing III-V materials in a high-pressure chemical vapor-deposition reactor

Beatriz Cardelino, Craig Moore, Carlos Cardelino, Nikolaus Dietz

Proceedings Volume 5912, 59120F (2005) https://doi.org/10.1117/12.616528

KEYWORDS: Indium nitride, 3D modeling, Indium, Medium wave, Nitrogen, Adsorption, Chemistry, Chemical reactions, Computer simulations, Temperature metrology

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Proceedings Article | 21 September 2005 Paper

Paper

The growth of InN and related alloys by high-pressure CVD

Nikolaus Dietz, Mustafa Alevli, Hun Kang, Martin Strassburg, Vincent Woods, Ian Ferguson, Craig Moore, Beatriz Cardelino

Proceedings Volume 5912, 59120E (2005) https://doi.org/10.1117/12.616699

KEYWORDS: Indium nitride, Absorption, Indium, Chemical vapor deposition, Chemistry, Gallium, Ultraviolet radiation, Aluminum, Nitrogen, Optoelectronics

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Proceedings Article | 25 March 2005 Paper

Paper

Multifunctional III-nitride dilute magnetic semiconductor epilayers and nanostructures as a future platform for spintronic devices

Matthew Kane, Martin Strassburg, Ali Asghar, Qing Song, Shalini Gupta, Jayantha Senawiratne, Christoph Hums, Ute Haboeck, Axel Hoffmann, Dmitry Azamat, Wolfgang Gehlhoff, Nikolaus Dietz, Z. John Zhang, Christopher Summers, Ian Ferguson

Proceedings Volume 5732, (2005) https://doi.org/10.1117/12.582980

KEYWORDS: Manganese, Gallium, Gallium nitride, Magnetism, Nanostructures, Annealing, Metalorganic chemical vapor deposition, Silicon, Magnetic semiconductors, Ferromagnetics

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Showing 5 of 15 publications

Proceedings Volume Editor (4)

SPIE Conference Volume | 7 December 2017

Sixteenth International Conference on Solid State Lighting and LED-based Illumination Systems

SPIE Conference Volume | 13 December 2016

Fifteenth International Conference on Solid State Lighting and LED-based Illumination Systems

SPIE Conference Volume | 8 October 2015

Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems

SPIE Conference Volume | 8 October 2014

Thirteenth International Conference on Solid State Lighting

Conference Committee Involvement (8)

Sixteenth International Conference on Solid State Lighting and LED-based Illumination Systems

9 August 2017 | San Diego, California, United States

Fifteenth International Conference on Solid State Lighting and LED-based Illumination Systems

31 August 2016 | San Diego, California, United States

Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems

12 August 2015 | San Diego, California, United States

Thirteenth International Conference on Solid State Lighting and LED-based Illumination Systems

20 August 2014 | San Diego, California, United States

LED-based Illumination Systems

26 August 2013 | San Diego, California, United States

Showing 5 of 8 Conference Committees

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