A proof-of-concept Krypton Fluoride excimer laser-based patterning system was designed and constructed with dual applications in lithography and laser-ablation patterning. For the lithographic patterning application, utilizing a typical positive-tone chemical amplification resist material, potential for sub-μm patterning was realized with ultimate resolution obtained at 0.8μm 1:1 lines-and-spaces (L/S). Moreover, extremely large depth-of-focus was confirmed, e.g. 50μm at 5μm 1:1 L/S. For the laser-ablation patterning application, ultimate resolutions of up to 1.2μm 1:1 L/S were obtained using a novolac-based material. It was also understood that higher exposure energy per shot can aid in pattern profile enhancement. Results obtained here show the potential of the patterning system for μm and sub-μm level patterning of thick resist films.