Dr. Nola Li Profile

Dr. Nola Li

Yield Engineer

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Author

Publications (11)

Proceedings Article | 18 August 2009 Paper

MOCVD growth of GaN on Si substrates using an ALD-grown Al2O3 interlayer

William Fenwick, Andrew Melton, Nola Li, Tianming Xu, Christopher Summers, Muhammad Jamil, Ian Ferguson

Proceedings Volume 7422, 74220P (2009) https://doi.org/10.1117/12.828462

KEYWORDS: Gallium nitride, Silicon, Sapphire, Light emitting diodes, Metalorganic chemical vapor deposition, Patterned sapphire substrate, Atomic layer deposition, Corundum, Raman spectroscopy, Aluminum nitride

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Proceedings Article | 18 August 2009 Paper

III-nitride epilayers on ZnO Substrates by MOCVD using Al2O3 as a transition layer

Nola Li, Will Fenwick, Andrew Melton, I-Hsiang Hung, Zhe Chuan Feng, Christopher Summers, Muhammad Jamil, Ian Ferguson

Proceedings Volume 7422, 74220J (2009) https://doi.org/10.1117/12.829482

KEYWORDS: Zinc oxide, Indium gallium nitride, Light emitting diodes, Gallium nitride, Metalorganic chemical vapor deposition, Sapphire, Zinc, Atomic layer deposition, Indium, Diffusion

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Proceedings Article | 3 February 2009 Paper

Development of new substrate technologies for GaN LEDs: atomic layer deposition transition layers on silicon and ZnO

W. E. Fenwick, N. Li, M. Jamil, T. Xu, A. Melton, S. Wang, H. Yu, A. Valencia, J. Nause, C. Summers, I. T. Ferguson

Proceedings Volume 7231, 723119 (2009) https://doi.org/10.1117/12.815324

KEYWORDS: Gallium nitride, Zinc oxide, Silicon, Annealing, Corundum, Crystals, Light emitting diodes, Atomic layer deposition, Metalorganic chemical vapor deposition, Scanning electron microscopy

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Proceedings Article | 3 September 2008 Paper

MOVPE growth of AlGaN/GaN superlattices on ZnO substrates for green emitter applications

Hongbo Yu, Shenjie Wang, Nola Li, William Fenwick, Andrew Melton, Matthew Kane, B. Klein, Ian Ferguson

Proceedings Volume 7058, 70580V (2008) https://doi.org/10.1117/12.798540

KEYWORDS: Zinc oxide, Superlattices, Gallium nitride, Temperature metrology, Satellites, Optical properties, Interfaces, Indium gallium nitride, Quantum wells, Crystals

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Proceedings Article | 2 September 2008 Paper

Metalorganic chemical vapor deposition of GaN and InGaN on ZnO substrate using Al₂O₃ as a transition layer

Nola Li, Shen-Jie Wang, Chung-Lung Huang, Zhe Chuan Feng, Adriana Valencia, Jeff Nause, Christopher Summers, Ian Ferguson

Proceedings Volume 7058, 70580K (2008) https://doi.org/10.1117/12.797946

KEYWORDS: Gallium nitride, Zinc oxide, Indium gallium nitride, Zinc, Annealing, Metalorganic chemical vapor deposition, Corundum, Diffusion, Atomic layer deposition, Crystals

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Proceedings Article | 17 September 2007 Paper

Growth of InGaN with high indium content on ZnO based sacrificial substrates

Nola Li, Shen-Jie Wang, Eun-Hyun Park, Zhe Chuan Feng, Adriana Valencia, Jeff Nause, Chris Summers, Ian Ferguson

Proceedings Volume 6669, 66690X (2007) https://doi.org/10.1117/12.741932

KEYWORDS: Indium gallium nitride, Zinc oxide, Indium, Gallium nitride, Aluminum, Annealing, Metalorganic chemical vapor deposition, Crystals, Diffusion, Zinc

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Proceedings Article | 17 September 2007 Paper

Enhancement of light extraction of GaN light-emitting diode using opals layer

Bin Zhang, Zhiping Zhou, Nola Li, Ian Ferguson

Proceedings Volume 6669, 66691K (2007) https://doi.org/10.1117/12.760787

KEYWORDS: Light emitting diodes, Optical spheres, Monte Carlo methods, Photons, Reflection, Gallium nitride, Refractive index, Photonic crystals, Finite-difference time-domain method, Indium gallium nitride

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Proceedings Article | 14 September 2007 Paper

Photoluminescence dynamics and structural investigation of InGaN/GaN multiple quantum well light emitting diodes grown by metalorganic chemical vapor deposition

Z. S. Lee, Z. C. Feng, A. G. Li, H. Tsai, J. Yang, Y. F. Chen, N. Li, I. Ferguson, W. Lu

Proceedings Volume 6669, 66690I (2007) https://doi.org/10.1117/12.741718

KEYWORDS: Indium gallium nitride, Luminescence, Indium, Light emitting diodes, Gallium nitride, Quantum wells, Metalorganic chemical vapor deposition, Transmission electron microscopy, Blue light emitting diodes, Satellites

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Proceedings Article | 12 September 2006 Paper

Growth of GaN on ZnO for solid state lighting applications

Nola Li, Eun-Hyun Park, Yong Huang, Shenjie Wang, Adriana Valencia, Bill Nemeth, Jeff Nause, Ian Ferguson

Proceedings Volume 6337, 63370Z (2006) https://doi.org/10.1117/12.696645

KEYWORDS: Gallium nitride, Zinc oxide, Metalorganic chemical vapor deposition, Etching, Zinc, Solid state lighting, Crystals, Luminescence, Light emitting diodes, Diffusion

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Proceedings Article | 3 March 2006 Paper

Review of recent efforts on the growth and characterization of nitride-based diluted magnetic semiconductors

Matthew Kane, Martin Strassburg, Ali Asghar, Nola Li, Will Fenwick, Ian Ferguson

Proceedings Volume 6121, 61210L (2006) https://doi.org/10.1117/12.659025

KEYWORDS: Manganese, Gallium, Magnetism, Gallium nitride, Ions, Silicon, Raman spectroscopy, Magnetic semiconductors, Metalorganic chemical vapor deposition, Ferromagnetics

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Wide bandgap nitrides and oxides have been heralded as a possible platform for future semiconductor spintronics applications based on the inherent compatibility of these materials with existing semiconductors as well as theoretical predictions of room temperature ferromagnetism. Experimental reports of room temperature ferromagnetism in these materials are complicated by disparate crystalline quality and phase purity in these materials, as well as conflicting theoretical predictions as to the nature of ferromagnetic behavior in this system. A complete understanding of these materials, and ultimately intelligent design of spintronic devices, will require an exploration of the relationship between the processing techniques, resulting transition metal atom configuration, defects, and electronic compensation as related to the structure, magnetic, and magneto-optical properties of this material. This work explores the growth and properties of Ga_1-xMn_xN films by metalorganic chemical vapor deposition on cplane sapphire substrates with varying thickness, Mn concentration, and alloying elements. Homogenous Mn incorporation throughout the films was verified with Secondary Ion Mass Spectroscopy (SIMS), and no macroscopic second phases were detected using X-ray diffraction (XRD). SQUID and vibrating sample magnetometry measurements showed an apparent room temperature ferromagnetic hysteresis, whose strength can be altered considerably through annealing and introduction of either Si or Mg during the growth process. Three sets of Raman modes appeared to be sensitive to Mn incorporation. The intensities of a broad band around 300cm^-1 and sharper modes near 669cm^-1 increased with increasing Mn concentration. The rise of the former is attributed to a decrease in long-range lattice ordering for higher Mn concentration. The second mode is due to nitrogen vacancy-related local vibrational modes of the GaN host lattice. Si co-doped Ga_1-xMn_xN results in shallow donor states in GaN suppress the formation of nitrogen vacancies by compensating the p-type deep level defects introduced by substitutional Mn. The formation of a Mn-related midgap impurity band is observed via optical transmission measurement in Ga_1-xMn_xN with strong magnetic signatures, but not for Si co-doped samples. Initial studies on light emitting diodes (LEDs) containing a Mn-doped active region have also been produced. Devices were fabricated with different Mn-doped active layer thicknesses, and I-V characteristics show that the devices become highly resistive as thickness of the Mn-doped active layer increases. The electroluminescence of these devices is dominated by a high suppressed band-edge recombination and a midgap defect-related emission, leading to an orange-colored but weakly emitting LED. These results suggest that traditional theoretical and device approaches akin to those realized in Ga_1-xMn_xN may be difficult to realize in Ga_1-xMn_xN, and exploitation of these materials will require further novel device approaches taking into account the nature of this material.

Proceedings Article | 2 September 2005 Paper

ZnO semiconductors for lighting

Jeff Nause, Ming Pan, Varatharajan Rengarajan, William Nemeth, Shanthi Ganesan, Adam Payne, Nola Li, Ian Ferguson

Proceedings Volume 5941, 59410D (2005) https://doi.org/10.1117/12.624534

KEYWORDS: Zinc oxide, Light emitting diodes, Electroluminescence, Nitrogen, Metalorganic chemical vapor deposition, Sapphire, Absorption, Resistance, Crystals, Aluminum

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Showing 5 of 11 publications

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