In this paper we calculated an electric field produced by interdigital electrodes in IPS-mode analytically and compare them with our numerical calculations. The results for the threshold voltage in our model and it dependence on the cell sickness and electrode gap are in the good agreement with the experimental data of Matsumoto (et. al). Also we proposed optimized
cell geometry for the IPS mode that corresponds to the smallest threshold voltage. Using the results for the electric field we found the director profile in our model for the nematic cell with the strong director anchoring.
We have analyzed the nematic liquid crystal reorientation in IPS mode and we present the result of theoretical study of this problem. In calculations we used the non-uniform electric field profile for inter-digital electrode configuration.
In this paper we present analytical and numerical calculations of electric field profile for interdigital electrode configuration and corresponding threshold voltage. Our results for threshold voltage for nematic director reorientation take account of non-homogeneous profile of the electric field in the IPS mode. We found there exists optimal ratio between cell thickness, electrode width and electrode gap which corresponds to minimal value of the threshold voltage. Our results on operating voltage dependence on the cell thickness and electrode gap are in good agreement with the experimental data.
In the inplane-switching (IPS) mode an electric field is applied to the liquid crystals along the direction that is parallel to the plane of the substrates with interdigital electrodes. The threshold behavior and response characteristics of the liquid crystals in the IPS mode were studied by Oh-e et al. Assuming uniform electric field and strong director anchoring at the cell boundaries. We found an electric field profile of the electric field in the IPS mode. We found there exists an optimal ratio between the cell thickness, electrode width and electrode gap which corresponds to minimal value of the threshold voltage.