Dr. Olivier Toublan Profile

Dr. Olivier Toublan

European Product Specialist at Siemens EDA

SPIE Involvement:

Author

Publications (46)

Proceedings Article | 28 July 2014 Paper

Paper

Accurate mask model for advanced nodes

Nacer Zine El Abidine, Frank Sundermann, Emek Yesilada, El Hadji Omar Ndiaye, Kushlendra Mishra, Sankaranarayanan Paninjath, Ingo Bork, Peter Buck, Olivier Toublan, Isabelle Schanen

Proceedings Volume 9256, 925603 (2014) https://doi.org/10.1117/12.2069977

KEYWORDS: Photomasks, Calibration, Data modeling, Optical proximity correction, Etching, Error analysis, Printing, Electron beam lithography, Scanning electron microscopy, Semiconducting wafers

Read Abstract +

Proceedings Article | 13 March 2012 Paper

Paper

RET and DFM techniques for sub 30nm

E. Yesilada, J. Entradas, C. Gardin, J. N. Pena, A. Villaret, V. Farys, C. Beylier, F. Robert, S. Postnikov, A. M. Armeanu, C. Moyroud, F. Chaoui, F. Bernard Granger, O. Toublan

Proceedings Volume 8326, 83262H (2012) https://doi.org/10.1117/12.915825

KEYWORDS: Optical proximity correction, SRAF, Lithography, Resolution enhancement technologies, Design for manufacturing, Photomasks, Computational lithography, Inspection, Manufacturing, Optical lithography

Read Abstract +

Proceedings Article | 4 March 2010 Paper

Paper

LENS (lithography enhancement toward nano scale): a European project to support double exposure and double patterning technology development

Pietro Cantu, Livio Baldi, Paolo Piacentini, Joost Sytsma, Bertrand Le Gratiet, Stéphanie Gaugiran, Patrick Wong, Hiroyuki Miyashita, Luisa Atzei, Xavier Buch, Dick Verkleij, Olivier Toublan, Francesco Perez-Murano, David Mecerreyes

Proceedings Volume 7640, 764022 (2010) https://doi.org/10.1117/12.846030

KEYWORDS: Double patterning technology, Photomasks, Lithography, Metrology, Etching, Optical lithography, Algorithm development, Immersion lithography, Materials processing, Manufacturing

Read Abstract +

Proceedings Article | 30 September 2009 Paper

Paper

SRAF enhancement using inverse lithography for 32nm hole patterning and beyond

V. Farys, F. Chaoui, J. Entradas, F. Robert, O. Toublan, Y. Trouiller

Proceedings Volume 7488, 748813 (2009) https://doi.org/10.1117/12.829894

KEYWORDS: SRAF, Photomasks, Logic, Lithography, Optical proximity correction, Optical lithography, Model-based design, Printing, Inspection, Scanning electron microscopy

Read Abstract +

Proceedings Article | 13 March 2009 Paper

Paper

Full flow for transistor simulation based on edge-contour extraction and advanced SPICE simulation

Eitan Shauly, Andres Torres, Loran Friedrich, Moran Cohen-Yasour, Ovadya Menadeva, Fedor Pikus

Proceedings Volume 7275, 727519 (2009) https://doi.org/10.1117/12.814361

KEYWORDS: Transistors, Device simulation, Calibration, Semiconducting wafers, Ions, Instrument modeling, Data modeling, Process modeling, Manufacturing, Electrochemical etching

Read Abstract +

Proceedings Article | 16 March 2006 Paper

Paper

The influence of calibration pattern coverage for lumped parameter resist models on OPC convergence

Martin Niehoff, Shumay Shang, Olivier Toublan

Proceedings Volume 6156, 615619 (2006) https://doi.org/10.1117/12.657536

KEYWORDS: Calibration, Optical proximity correction, Data modeling, Visualization, Printing, Optical simulations, Feature extraction, Process modeling, Metals, Scanning electron microscopy

Read Abstract +

Proceedings Article | 14 March 2006 Paper

Paper

Reticle enhancement verification for the 65nm and 45nm nodes

Kevin Lucas, Kyle Patterson, Robert Boone, Corinne Miramond, Amandine Borjon, Jerome Belledent, Olivier Toublan, Jorge Entradas, Yorick Trouiller

Proceedings Volume 6156, 61560R (2006) https://doi.org/10.1117/12.658823

KEYWORDS: Resolution enhancement technologies, Optical proximity correction, Process modeling, Error analysis, Image processing, Semiconducting wafers, Reticles, Optical lithography, Photomasks, Model-based design

Read Abstract +

Proceedings Article | 8 November 2005 Paper

Paper

Reverse engineering source polarization error

George Bailey, Kostas Adam, Travis Brist, Olivier Toublan, Andrew Estroff

Proceedings Volume 5992, 599234 (2005) https://doi.org/10.1117/12.632420

KEYWORDS: Polarization, Data modeling, Reverse modeling, Error analysis, Immersion lithography, Reverse engineering, Critical dimension metrology, Semiconducting wafers, Calibration, Lithography

Read Abstract +

Proceedings Article | 28 June 2005 Paper

Paper

Correction of long-range effects applied to the 65-nm node

Jerome Belledent, James Word, Yorick Trouiller, Christophe Couderc, Corinne Miramond, Olivier Toublan, Jean-Damien Chapon, Stanislas Baron, Amandine Borjon, Franck Foussadier, Christian Gardin, Kevin Lucas, Kyle Patterson, Yves Rody, Frank Sundermann, Jean-Christophe Urbani

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617433

KEYWORDS: Critical dimension metrology, Etching, Photomasks, Convolution, Optical proximity correction, Electrons, Point spread functions, Optical lithography, Scattering, Light scattering

Read Abstract +

Proceedings Article | 12 May 2005 Paper

Paper

Full chip model based correction of flare-induced linewidth variation

James Word, Jerome Belledent, Yorick Trouiller, Yuri Granik, Olivier Toublan, Wilhelm Maurer

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.601182

KEYWORDS: Optical proximity correction, Point spread functions, Convolution, Data modeling, Light scattering, Critical dimension metrology, SRAF, Databases, Optical lithography, Process modeling

Read Abstract +

Proceedings Article | 12 May 2005 Paper

Paper

High accuracy 65nm OPC verification: full process window model vs. critical failure ORC

Amandine Borjon, Jerome Belledent, Shumay Shang, Olivier Toublan, Corinne Miramond, Kyle Patterson, Kevin Lucas, Christophe Couderc, Yves Rody, Frank Sundermann, Jean-Christophe Urbani, Stanislas Baron, Yorick Trouiller, Patrick Schiavone

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.600471

KEYWORDS: Data modeling, Optical proximity correction, Calibration, Printing, Optical lithography, Scanning electron microscopy, Process modeling, 3D modeling, Lithography, Photomasks

Read Abstract +

It is becoming more and more difficult to ensure robust patterning after OPC due to the continuous reduction of layout dimensions and diminishing process windows associated with each successive lithographic generation. Lithographers must guarantee high imaging fidelity throughout the entire range of normal process variations. The techniques of Mask Rule Checking (MRC) and Optical Rule Checking (ORC) have become mandatory tools for ensuring that OPC delivers robust patterning. However the first method relies on geometrical checks and the second one is based on a model built at best process conditions. Thus those techniques do not have the ability to address all potential printing errors throughout the process window (PW). To address this issue, a technique known as Critical Failure ORC (CFORC) was introduced that uses optical parameters from aerial image simulations. In CFORC, a numerical model is used to correlate these optical parameters with experimental data taken throughout the process window to predict printing errors. This method has proven its efficiency for detecting potential printing issues through the entire process window [1]. However this analytical method is based on optical parameters extracted via an optical model built at single process conditions. It is reasonable to expect that a verification method involving optical models built from several points throughout PW would provide more accurate predictions of printing errors for complex features. To verify this approach, compact optical models similar to those used for standard OPC were built and calibrated with experimental data measured at the PW limits. This model is then applied to various test patterns to predict potential printing errors. In this paper, a comparison between these two approaches is presented for the poly layer at 65 nm node patterning. Examples of specific failure predictions obtained separately with the two techniques are compared with experimental results. The details of implementing these two techniques on full product layouts are also included in this study.

Proceedings Article | 12 May 2005 Paper

Paper

Assessment of complementary double dipole lithography for 45nm and 32nm technologies

Sergei Postnikov, Emilien Robert, Philippe Thony, Kyle Patterson, Scott Warrick, Daniel Henry, Andres Torres, Olivier Toublan

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.601756

KEYWORDS: Photomasks, Lithography, Monte Carlo methods, Critical dimension metrology, Optical proximity correction, Polarization, Lithographic illumination, Optical lithography, SRAF, Nanoimprint lithography

Read Abstract +

Proceedings Article | 6 May 2005 Paper

Paper

Layout compensation for EUV flare

Franklin Schellenberg, James Word, Olivier Toublan

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.599999

KEYWORDS: Optical proximity correction, Extreme ultraviolet, Visualization, Lithography, Point spread functions, Extreme ultraviolet lithography, EUV optics, Photomasks, Process modeling, Data modeling

Read Abstract +

Proceedings Article | 5 May 2005 Paper

Paper

Investigation of model-based physical design restrictions

Kevin Lucas, Stanislas Baron, Jerome Belledent, Robert Boone, Amandine Borjon, Christophe Couderc, Kyle Patterson, Lionel Riviere-Cazaux, Yves Rody, Frank Sundermann, Olivier Toublan, Yorick Trouiller, Jean-Christophe Urbani, Karl Wimmer

Proceedings Volume 5756, (2005) https://doi.org/10.1117/12.601105

KEYWORDS: Model-based design, Optical proximity correction, Optical lithography, Data modeling, Lithography, Systems modeling, Semiconductors, Resolution enhancement technologies, Reticles, Semiconducting wafers

Read Abstract +

Proceedings Article | 6 December 2004 Paper

Paper

Full-chip model-based correction of flare-induced linewidth variation

James Word, Jerome Belledent, Yorick Trouiller, Wilhelm Maurer, Yuri Granik, Emile Sahouria, Olivier Toublan

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569175

KEYWORDS: Optical proximity correction, Point spread functions, Convolution, Data modeling, Light scattering, Critical dimension metrology, SRAF, Databases, Optical lithography, Process modeling

Read Abstract +

Proceedings Article | 28 May 2004 Paper

Paper

Critical failure ORC: application to the 90-nm and 65-nm nodes

Jerome Belledent, Shumay Shang, Yorick Trouiller, Corinne Miramond, Kyle Patterson, Olivier Toublan, Christophe Couderc, Frank Sundermann, Yves Rody

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.537190

KEYWORDS: Optical proximity correction, Data modeling, Calibration, Printing, Visualization, Failure analysis, Bridges, Scattering, Image processing, Semiconducting wafers

Read Abstract +

Proceedings Article | 28 May 2004 Paper

Paper

Evaluation of IDEALSmile for 90-nm FLASH memory contact holes imaging with ArF scanner

Pietro Cantu, Gianfranco Capetti, Sara Loi, Marco Lupo, Annalisa Pepe, Kenji Saitoh, Kenji Yamazoe, Yasuo Hasegawa, Junji Iwasa, Olivier Toublan

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.534065

KEYWORDS: Monochromatic aberrations, Printing, Photomasks, Optical proximity correction, Scanners, Binary data, Resolution enhancement technologies, Lithography, Spherical lenses, Visualization

Read Abstract +

Proceedings Article | 28 May 2004 Paper

Paper

Detailed process analysis for sub-resolution assist features introduction

Andreas Torsy, Olivier Toublan, Rainer Zimmermann, Harry Smyth, Jens Hassmann

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.536575

KEYWORDS: SRAF, Optical proximity correction, Printing, Photomasks, Calibration, Model-based design, Data modeling, Visualization, Process modeling, Silicon

Read Abstract +

Sub-Resolution Assists Features (SRAF) is a well known and well described method for process window improvement. The introduction of such a technique is not always an easy task for two reasons. On one hand the SRAF placement rules must be defined very well and on the other hand an empirical resist model must be created, which describes the process. Model based Optical and Process effects correction (MB-OPC) is using an empirical model so called black box, which must be able to predict properly the printing feature for any kind of complex design configuration. When SRAF are implemented in the design, the degree of freedom for the MB-OPC can be reduced. Beside that effort to predetermine as required as possible the target layer, SRAF placement rules and SRAF printing restrictions will limit the OPC. MB-OPC has to cover both the parameters space corresponding to areas in which SRAF are placed and the parameter space for which no SRAF has been implemented. Of course, it could also be possible to apply the correction of the proximity effect of a complex design with SRAF by an extensive rule-based OPC. Nevertheless the advantage of MB-OPC exists in the possibility to verify the design after Data Preparation by simulating it with the help of the calibrated model. However one should not trust the simulation alone, always a verification of the design on silicon would be necessary, by comparing simulation to SEM images. Beside the advantages of MB-OPC also weaknesses exist in the meantime, which could require a combination of rule-based and model-based OPC, so called “hybrid OPC”. Empirical models are very often only able to predict the proximity behavior due to a certain range, which is called the optical range of a model. Distances bigger than this range will be covered by extrapolations. This procedure would be correct, if the proximity behavior was as constant as in the area inside the optical range. We generated an empirical model with the Calibre Workbench from Mentor Graphics. For the model calibration we chose structures with SRAF placement rules, which we applied to the design as well as SRAF placement rules which were not applied to the design. Afterwards, we performed simulations of critical lines over pitch including SRAF. Beside the MB-OPC, we will also describe in this paper the process steps how to generate the SRAF placement rules. The restrictions resulting from the SRAF rules are presented. Subsequently, the experimental results will show that both for symmetrical and asymmetrical structures an improvement of the process window has been obtained. Also weaknesses become clear, which place either the model or the SRAF rule-set questionable. Finally two solutions will be compared, a pure MB-OPC including the isolated lines outside of the optical range and a combination of MB-OPC with a rule-based OPC table for the isolated lines.

Proceedings Article | 3 May 2004 Paper

Paper

Combining OPC and design for printability into 65-nm logic designs

Kevin Lucas, Chi-Min Yuan, Robert Boone, Kirk Strozewski, Jason Porter, Ruiqi Tian, Karl Wimmer, Jonathan Cobb, Bill Wilkinson, Olivier Toublan

Proceedings Volume 5379, (2004) https://doi.org/10.1117/12.537655

KEYWORDS: Reticles, Optical proximity correction, Design for manufacturing, Lithography, Logic, Model-based design, Metals, Manufacturing, Optical lithography, Yield improvement

Read Abstract +

SPIE Journal Paper | 1 April 2004

Complementary double-exposure technique (CODE): a way to print 80- and 65-nm gate levels using a double-exposure binary mask approach

Serdar Manakli, Yorick Trouiller, Olivier Toublan, Patrick Schiavone, Yves Rody, Pierre-Jerome Goirand

JM3, Vol. 3, Issue 02, (April 2004) https://doi.org/10.1117/12.10.1117/1.1683359

KEYWORDS: Photomasks, Binary data, Printing, Electroluminescence, Scanners, Resolution enhancement technologies, Visualization, Semiconducting wafers, Manufacturing, Optical proximity correction

Read Abstract +

Proceedings Article | 17 December 2003 Paper

Paper

Improvement of empirical OPC model robustness using full-chip aerial image analysis

Thomas Roessler, Beate Frankowsky, Olivier Toublan

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518055

KEYWORDS: Optical proximity correction, Product engineering, Data modeling, Model-based design, Artificial intelligence, Image analysis, Printing, Solids, Photomasks, Semiconducting wafers

Read Abstract +

Proceedings Article | 10 July 2003 Paper

Paper

Using the CODE technique to print complex two-dimensional structures in a 90-nm ground rule process

Serdar Manakli, Yorick Trouiller, Olivier Toublan, Patrick Schiavone, Yves Rody, Pierre Jerome Goirand

Proceedings Volume 5042, (2003) https://doi.org/10.1117/12.485529

KEYWORDS: Photomasks, Printing, Neodymium, Electroluminescence, Binary data, Scanners, Resolution enhancement technologies, Optical proximity correction, Visualization, Manufacturing

Read Abstract +

Proceedings Article | 26 June 2003 Paper

Paper

Process, design, and optical proximity correction requirements for the 65nm device generation

Kevin Lucas, Patrick Montgomery, Lloyd Litt, Will Conley, Sergei Postnikov, Wei Wu, Chi-Min Yuan, Marc Olivares, Kirk Strozewski, Russell Carter, James Vasek, David Smith, Eric Fanucchi, Vincent Wiaux, Geert Vandenberghe, Olivier Toublan, Arjan Verhappen, Jan Kuijten, Johannes van Wingerden, Bryan Kasprowicz, Jeffrey Tracy, Christopher Progler, Eugene Shiro, Igor Topouzov, Karl Wimmer, Bernard Roman

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485498

KEYWORDS: Reticles, Optical lithography, Optical proximity correction, Lithography, 193nm lithography, Scanners, Logic, Optical design, Lithographic illumination, SRAF

Read Abstract +

Proceedings Article | 27 December 2002 Paper

Paper

Complementary double-exposure technique (CODE) solutions to the two-dimensional structures of 90-nm node

Serdar Manakli, Yorick Trouiller, Olivier Toublan, Patrick Schiavone, Yves Rody, Pierre Jerome Goirand

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.468203

KEYWORDS: Photomasks, Resolution enhancement technologies, Binary data, Optical proximity correction, Manufacturing, Scanners, Printing, Cadmium, Integrated circuits, Lithographic illumination

Read Abstract +

Proceedings Article | 1 August 2002 Paper

Paper

Adjustment of optical proximity correction (OPC) software for mask process correction (MPC): Module 2. Lithography simulation based on optical mask writing tool simulation

Alexandra Barberet, Peter Buck, Gilles Fanget, Olivier Toublan, Jean-Charles Richoilley, Michel Tissier

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.476988

KEYWORDS: Photomasks, Optical proximity correction, Scanning electron microscopy, Semiconducting wafers, Databases, Data modeling, Lithography, Process modeling, Optical simulations, Manufacturing

Read Abstract +

Proceedings Article | 30 July 2002 Paper

Paper

Evaluation of OPC mask printing with a raster scan pattern generator

Thomas Newman, Jan Chabala, B.J. Marleau, Frederick Raymond, Olivier Toublan, Mark Gesley, Frank Abboud

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474514

KEYWORDS: Raster graphics, Photomasks, Optical proximity correction, Point spread functions, Convolution, Model-based design, Printing, Electron beam lithography, Image resolution, Lithography

Read Abstract +

Proceedings Article | 30 July 2002 Paper

Paper

Complementary double-exposure technique (CODE): a way to print 80-nm gate level using a double-exposure binary mask approach

Serdar Manakli, Yorick Trouiller, Olivier Toublan, Patrick Schiavone, Corinne Miramond, Yves Rody, Frank Sundermann, J. D. Chapon, Pierre-Jerome Goirand

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474597

KEYWORDS: Photomasks, Binary data, Electroluminescence, Resolution enhancement technologies, Neodymium, Visualization, Scanners, Critical dimension metrology, Manufacturing, Printing

Read Abstract +

Proceedings Article | 30 July 2002 Paper

Paper

Model-assisted double dipole decomposition

Andres Torres, Franklin Schellenberg, Olivier Toublan

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474589

KEYWORDS: Optical proximity correction, Model-based design, Image processing, Systems modeling, Feature extraction, Visualization, Optical lithography, Photomasks, Resolution enhancement technologies

Read Abstract +

Proceedings Article | 12 July 2002 Paper

Paper

Design verification flow for model-assisted double-dipole decomposition

Juan Andres Torres, Franklin Schellenberg, Olivier Toublan

Proceedings Volume 4692, (2002) https://doi.org/10.1117/12.475695

KEYWORDS: Manufacturing, Photomasks, Optical proximity correction, Lithography, Data modeling, Optics manufacturing, Image acquisition, Resolution enhancement technologies, Image processing, Lithographic illumination

Read Abstract +

Proceedings Article | 11 March 2002 Paper

Paper

Leap ahead in mask data processing for technology nodes below 130 nm

Corinne Miramond, Dominique Goubier, Michael Chomat, Yorick Trouiller, Yves Rody, Olivier Toublan

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458354

KEYWORDS: Optical proximity correction, Model-based design, Photomasks, Data modeling, Data processing, Etching, Data conversion, Metals, Visualization, Manufacturing

Read Abstract +

Proceedings Article | 11 March 2002 Paper

Paper

Adjustment of optical proximity correction (OPC) software for mask process correction (MPC). Module 1: Optical mask writing tool simulation

Alexandra Barberet, Gilles Fanget, Peter Buck, Olivier Toublan, Jean-Charles Richoilley, Michel Tissier

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458328

KEYWORDS: Photomasks, Data modeling, Databases, Silicon, Lithography, Process modeling, Optical simulations, Semiconducting wafers, 193nm lithography, Optical proximity correction

Read Abstract +

Proceedings Article | 14 September 2001 Paper

Paper

Fully automatic side lobe detection and correction technique for attenuated phase-shift masks

Olivier Toublan, Nicolas Cobb, Emile Sahouria

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435696

KEYWORDS: Optical proximity correction, Photomasks, Printing, Metals, Image processing, Manufacturing, Visualization, Scattering, Lithography, Model-based design

Read Abstract +

Proceedings Article | 5 September 2001 Paper

Paper

(Sub-) 100-nm gate patterning using 248-nm alternating PSM

Geert Vandenberghe, Patrick Jaenen, Rik Jonckheere, Kurt Ronse, Olivier Toublan

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438406

KEYWORDS: Photomasks, Phase shifts, Reticles, Semiconducting wafers, Etching, Binary data, Optical lithography, Cadmium sulfide, Lithography, Overlay metrology

Read Abstract +

Proceedings Article | 22 January 2001 Paper

Paper

Phase and transmission errors aware OPC solution for PSM: feasability demonstration

Olivier Toublan, Emile Sahouria, Nicolas Cobb

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410769

KEYWORDS: Photomasks, Etching, Optical proximity correction, Phase shifts, Quartz, Semiconducting wafers, Electromagnetism, Device simulation, Printing, Panoramic photography

Read Abstract +

Proceedings Article | 23 August 2000 Paper

Paper

Subresolution process windows and yield estimation technique based on detailed full-chip CD simulation

Yuri Granik, Nicolas Cobb, Emile Sahouria, Olivier Toublan, Luigi Capodieci, Robert Socha

Proceedings Volume 4182, (2000) https://doi.org/10.1117/12.410096

KEYWORDS: Critical dimension metrology, Binary data, Optical proximity correction, Cadmium, Statistical analysis, Photomasks, Phase shifts, Lithography, Visualization, Very large scale integration

Read Abstract +

Proceedings Article | 18 August 2000 Paper

Paper

Effects of advanced illumination schemes on design manufacturability and interactions with optical proximity corrections

Luigi Capodieci, Juan Andres Torres, Robert Socha, Uwe Hollerbach, J. Fung Chen, Christian van Os, Yuri Granik, Olivier Toublan, Nicolas Cobb

Proceedings Volume 4181, (2000) https://doi.org/10.1117/12.395751

KEYWORDS: Optical proximity correction, Design for manufacturability, Optics manufacturing, Critical dimension metrology, Image enhancement, Geometrical optics, Fiber optic illuminators, Error analysis, Statistical analysis, Image classification

Read Abstract +

Proceedings Article | 5 July 2000 Paper

Paper

Phase aware proximity correction for advanced masks

Olivier Toublan, Emile Sahouria, Nicolas Cobb, Thuy Do, Tom Donnelly, Yuri Granik, Franklin Schellenberg, Patrick Schiavone

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.388972

KEYWORDS: Photomasks, Optical proximity correction, Semiconducting wafers, Phase shifts, Image processing, Critical dimension metrology, Manufacturing, Photoresist processing, Mathematical modeling, Model-based design

Read Abstract +

Proceedings Article | 5 July 2000 Paper

Paper

OPC beyond 0.18 mm: OPC on PSM gates

Franklin Schellenberg, Olivier Toublan, Nicolas Cobb, Emile Sahouria, Greg Hughes, Susan MacDonald, Craig West

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.388942

KEYWORDS: Photomasks, Reticles, Optical proximity correction, Phase shifts, Phase shifting, Semiconducting wafers, Lithography, Manufacturing, Phase measurement, Etching

Read Abstract +

Proceedings Article | 2 June 2000 Paper

Paper

New process monitor for reticles and wafers: the MEEF meter

Franklin Schellenberg, Pat LaCour, Olivier Toublan, Geoffrey Anderson, Raymond Yip

Proceedings Volume 3998, (2000) https://doi.org/10.1117/12.386471

KEYWORDS: Reticles, Semiconducting wafers, Critical dimension metrology, Cadmium, Photomasks, Metrology, Lithography, Scanning electron microscopy, Photoresist processing, Resolution enhancement technologies

Read Abstract +

Proceedings Article | 26 July 1999 Paper

Paper

Application of a new approach to optical proximity correction

Anja Rosenbusch, Andrew Hourd, Casper Juffermans, Hartmut Kirsch, Frederic Lalanne, Wilhelm Maurer, Carmelo Romeo, Kurt Ronse, Patrick Schiavone, Michal Simecek, Olivier Toublan, Tom Vermeulen, John Watson, Wolfram Ziegler, Rainer Zimmermann

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354378

KEYWORDS: Optical proximity correction, Etching, Semiconducting wafers, Inspection, Deep ultraviolet, Reticles, Critical dimension metrology, Manufacturing, Mathematical modeling, Mask making

Read Abstract +

Proceedings Article | 26 July 1999 Paper

Paper

Flare impact on the intrafield CD control for sub-0.25-um patterning

Emmanuelle Luce, Blandine Minghetti, Patrick Schiavone, Olivier Toublan, Andre Weill

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354349

KEYWORDS: Critical dimension metrology, Semiconducting wafers, Reticles, Photomasks, Scanners, Reflectivity, Reflection, Optical lithography, Scanning electron microscopy, Error analysis

Read Abstract +

Proceedings Article | 11 June 1999 Paper

Paper

CVD photoresist performance for 248-nm lithography

Cedric Monget, Olivier Joubert, Timothy Weidman, Olivier Toublan, Jean-Pierre Panabiere, Andre Weill

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350265

KEYWORDS: Critical dimension metrology, Etching, Semiconducting wafers, Plasma, Lithography, Chemical vapor deposition, Photomasks, Photoresist materials, Photoresist processing, Oxidation

Read Abstract +

Proceedings Article | 11 June 1999 Paper

Paper

Process optimization of a negative-tone CVD photoresist for 193-nm lithography applications

Olivier Joubert, D. Fuard, Cedric Monget, Patrick Schiavone, Olivier Toublan, Alain Prola, J. Temerson, R. Inglebert, Timothy Weidman, Michael Nault, N. Bekiaris

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350191

KEYWORDS: Chemical vapor deposition, Plasma, Etching, Lithography, Oxygen, Line edge roughness, Plasma etching, Ultraviolet radiation, Photoresist materials, Photoresist processing

Read Abstract +

Proceedings Article | 18 December 1998 Paper

Paper

New approach to optical proximity correction

Anja Rosenbusch, Andrew Hourd, Casper Juffermans, Hartmut Kirsch, Frederic Lalanne, Wilhelm Maurer, Carmelo Romeo, Kurt Ronse, Patrick Schiavone, Michal Simecek, Olivier Toublan, John Watson, Wolfram Ziegler, Rainer Zimmermann

Proceedings Volume 3546, (1998) https://doi.org/10.1117/12.332856

KEYWORDS: Optical proximity correction, Reticles, Photomasks, Inspection, Data modeling, Manufacturing, Deep ultraviolet, Logic, Semiconducting wafers, Etching

Read Abstract +

Proceedings Article | 29 June 1998 Paper

Paper

Reducing or eliminating line-end shortening and iso/dense bias by tuning NA and sigma

Olivier Toublan, Patrick Schiavone

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310720

KEYWORDS: Optical proximity correction, Critical dimension metrology, Deep ultraviolet, Modulation, Diffraction, Inspection, Optical lithography, Lithography, Image processing, Amplitude modulation

Read Abstract +

Proceedings Article | 7 July 1997 Paper

Paper

New approach to PEB mechanisms in novolac-DNQ resists: influence of physical and viscoelastic properties

Olivier Toublan, Helene Peloso, Alain Prola, Patrick Paniez

Proceedings Volume 3049, (1997) https://doi.org/10.1117/12.275835

KEYWORDS: Critical dimension metrology, Diffusion, Picture Archiving and Communication System, Molecules, Temperature metrology, Lithography, Polymers, Etching, Scanning electron microscopy, Cadmium

Read Abstract +

Showing 5 of 46 publications

SIGN IN TO:

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Advertisement

Advertisement