Mr. Patrick J. LaCour Profile

Patrick J. LaCour

Product Engineer

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Author

Publications (36)

Proceedings Article | 28 April 2023 Paper

EUV full-chip curvilinear mask options for logic via and metal patterning

Neal Lafferty, Sagar Saxena, Keisuke Mizuuchi, Yuansheng Ma, Xima Zhang, Pat LaCour, Alexander Tritchkov, Farah Kmiec, John Sturtevant

Proceedings Volume 12495, 124950K (2023) https://doi.org/10.1117/12.2647882

KEYWORDS: SRAF, Optical proximity correction, Machine learning, Lithography, Simulations

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Proceedings Article | 23 March 2020 Paper

Model based CAOPC flow for memory chips to improve performance and consistency of RET solutions

Srividya Jayaram, Sherif Hany Mousa, Ashutosh Rathi, Pat LaCour, Zhenguo Zheng, Lei Zhang, Yaobin Feng, Jun Yao

Proceedings Volume 11327, 1132709 (2020) https://doi.org/10.1117/12.2551829

KEYWORDS: Optical proximity correction, SRAF, Resolution enhancement technologies, Lithography, Model-based design, Manufacturing, Pattern recognition

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Proceedings Article | 9 July 2015 Paper

Effective conflict resolution strategies for SRAF placement

Shashidhara Ganjugunte, Norbert Strecker, Srividya Jayaram, Pat LaCour, Ilhami Torunoglu

Proceedings Volume 9658, 965810 (2015) https://doi.org/10.1117/12.2193023

KEYWORDS: SRAF, Semiconductor manufacturing, Manufacturing, Photomasks, Composites, Printing, Acquisition tracking and pointing, Visualization, Silicon, Semiconducting wafers

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Sub-Resolution Assist Features (SRAFs) have emerged as a key technology to enable semiconductor manufacturing for advanced technology nodes. SRAF placement is required to adhere to manufacturability constraints (MRC). MRC specifications are distance and size constraints specified by the user to ensure SRAFs are not detrimental to the final target shapes being printed. Conceptually, SRAF placement can be divided into two steps - SRAF candidate generation and SRAF candidate cleanup or conflict resolution. SRAFs generated as candidates may not adhere to MRC constraints. It is during the cleanup/conflict resolution process that the MRC constraints are enforced. In this paper we focus on the latter phase - cleanup. The goal of the cleanup phase is to retain as much of the initial candidates as possible, and, if necessary, transform them to adhere to MRC conditions. An SRAF is said to be in conflict with another shape if it violates the distance MRC constraint. One can model these conflicts using a conflict graph G=(V,E), whose vertices V correspond to geometric shapes involved in a conflict and an edge is present in E, between two vertices if the corresponding shapes are involved in a conflict. A weight is associated with each vertex that could, for example, correspond to area of the corresponding shape. The goal of conflict resolution then, is to find a transformation of the vertices so that the resulting graph is conflict free while maximizing the weight of vertices retained. This can be viewed as a generalization of the computationally hard problem of finding the largest independent set of candidates, albeit allowing for transformation. The transformations we allow include deletion, splitting, resizing, merge, and bounded translation. In this paper, we describe an approach which classifies the conflicts and apply appropriate transformations to achieve effective SRAF placement. Further, we demonstrate that such a strategy reduces the number of rules to be specified by the user, reducing the user effort needed to achieve desirable imaging results.

Proceedings Article | 1 October 2013 Paper

Model-based SRAF solutions for advanced technology nodes

Srividya Jayaram, Pat LaCour, James Word, Alexander Tritchkov

Proceedings Volume 8886, 88860P (2013) https://doi.org/10.1117/12.2031789

KEYWORDS: SRAF, Model-based design, Photomasks, Logic, Optical proximity correction, Lithography, Liquid phase epitaxy, Manufacturing, Semiconducting wafers, Process modeling

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Proceedings Article | 12 April 2013 Paper

Effective model-based SRAF placement for full chip 2D layouts

Srividya Jayaram, Pat LaCour, James Word, Alexander Tritchkov

Proceedings Volume 8683, 86830H (2013) https://doi.org/10.1117/12.2011611

KEYWORDS: SRAF, Model-based design, Photomasks, Logic, Optical proximity correction, Lithography, Liquid phase epitaxy, Manufacturing, Semiconducting wafers, Process modeling

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Proceedings Article | 12 April 2013 Paper

Introducing a novel flow to estimate challenges encountered while transitioning from RET development to manufacturable solution

Jacky Cheng, Robin Chia, Ying Gong, Omar ElSewefy, GekSoon Chua, YeeMei Foong, Aasutosh Dave, Alvin Chua, DongQing Zhang, Vlad Liubich, Pat Lacour, Alex Tritchkov

Proceedings Volume 8683, 86830K (2013) https://doi.org/10.1117/12.2013605

KEYWORDS: Resolution enhancement technologies, Optical proximity correction, Source mask optimization, SRAF, Photomasks, Optimization (mathematics), Manufacturing, Tolerancing, Semiconducting wafers, Double patterning technology

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Proceedings Article | 13 March 2012 Paper

14nm M1 triple patterning

Qiao Li, Pradiptya Ghosh, David Abercrombie, Pat LaCour, Suniti Kanodia

Proceedings Volume 8326, 832612 (2012) https://doi.org/10.1117/12.916610

KEYWORDS: Optical lithography, Extreme ultraviolet, Current controlled current source, Double patterning technology, Optical proximity correction, Manufacturing equipment

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Proceedings Article | 14 October 2011 Paper

Double patterning from design enablement to verification

David Abercrombie, Pat Lacour, Omar El-Sewefy, Alex Volkov, Evgueni Levine, Kellen Arb, Chris Reid, Qiao Li, Pradiptya Ghosh

Proceedings Volume 8166, 81660X (2011) https://doi.org/10.1117/12.898895

KEYWORDS: Double patterning technology, Photomasks, Optical proximity correction, Manufacturing, Metals, Resolution enhancement technologies, Visualization, Semiconducting wafers, Image processing, Lithography

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Proceedings Article | 23 March 2011 Paper

Influence of the illumination source on model-based SRAF placement

Rachit Gupta, Aasutosh Dave, Edita Tejnil, Srividya Jayaram, Pat LaCour

Proceedings Volume 7973, 79731U (2011) https://doi.org/10.1117/12.879492

KEYWORDS: SRAF, Model-based design, Source mask optimization, Logic, Resolution enhancement technologies, Image analysis, Optical lithography, Lithographic illumination, Lithography, Standards development

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Proceedings Article | 4 March 2010 Paper

Impact of illumination on model-based SRAF placement for contact patterning

John Sturtevant, Srividya Jayaram, Omar El-Sewefy, Aasutosh Dave, Pat LaCour

Proceedings Volume 7640, 764036 (2010) https://doi.org/10.1117/12.846620

KEYWORDS: Photovoltaics, SRAF, Model-based design, Optical lithography, Source mask optimization, Image processing, Optical proximity correction, Logic, Printing, Acquisition tracking and pointing

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Proceedings Article | 14 December 2009 Paper

Comparison of rule-based versus model-based decomposition technique

Pat LaCour, Aasutosh Dave, Dyiann Chou, Omar El Sewefy

Proceedings Volume 7520, 752011 (2009) https://doi.org/10.1117/12.837204

KEYWORDS: Double patterning technology, Nanoimprint lithography, Lithography, Model-based design, Optical proximity correction, Visualization, Photomasks, Optical lithography, Shape analysis, Process modeling

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Proceedings Article | 12 December 2009 Paper

Hierarchical DPT mask planning for contact layer

Qiao Li, Pradiptya Ghosh, Pat LaCour

Proceedings Volume 7520, 75201O (2009) https://doi.org/10.1117/12.837214

KEYWORDS: Photomasks, Visualization, Double patterning technology, Lithography, Design for manufacturability, Manufacturing, Acquisition tracking and pointing, Roads, Optical lithography

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Proceedings Article | 4 December 2008 Paper

Image parameter-based scatter bar optimization

Ryan Chou, Li-Tung Hsiao, H. Y. Liao, Jack Lin, Regina Shen, Jochen Schacht, Dyiann Chou, Srividya Jayaram, Pat LaCour

Proceedings Volume 7140, 71402E (2008) https://doi.org/10.1117/12.804707

KEYWORDS: Printing, Optical proximity correction, Model-based design, Critical dimension metrology, Lithography, Optimization (mathematics), Manufacturing, SRAF, Resolution enhancement technologies, Semiconducting wafers

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Scatter Bar (SBAR) insertion is a computationally expensive operation. SBAR are usually generated rule-based. SBAR rule tables dictate the insertion of SBAR with different SBAR width dependent on the width of the printable main features and the spacing between the main features and SBAR. Optimization of the SBAR rules drives manufactures to ever more complex SBAR tables which increase the runtime. In advanced process nodes, SBAR printing issues, missing SBAR due to clean-up problems and joining SBAR of different width together remain challenging. On the other hand, pixelized inversion methods may yield optimized SBAR solutions, especially in terms of SBAR placement for contact layers, but comes at the expense of significant computational effort and increased mask writing and inspection time. Since OPC changes the spacing between SBAR and main features, an accurate and optimized SBAR solution requires OPC and SBAR optimization to run interactively. This work focuses on both line/space and contact layers To ensure fast SBAR optimization, SBAR placement and SBAR width optimization are separated. SBAR of uniform width are placed fast driven by a simple rule-based table comprising only a single SBAR width. This intermediate SBAR layer is subject into a model-based approach, which fragments the SBAR layer based on proximity with respect to the main features or other SBAR, and assigns measurement sites to each SBAR fragment. A model is used to move each SBAR fragment inward or outward so that the image cut line shows a maximum SBAR intensity closer to a predefined SBAR printing threshold. While the main features are unchanged, several iterations are applied to converge the SBAR fragments. Keeping the SBAR fragments fixed, OPC is applied to the main features. Repeating these steps allows optimization of the SBAR width and the OPC simultaneously. Site based as well as contours based verification methods are applied to ensure that the SBAR printing margin has been significantly improved. The improved SBAR printing margin allows manufactures to apply more aggressive SBAR placement rules, which, in addition to the optimized SBAR width, helps to enlarge the depth of focus, therefore, widen the common process window of the lithography process.

Proceedings Article | 17 October 2008 Paper

Double dipole RET investigation for 32 nm metal layers

Carl Babcock, Yi Zou, Derren Dunn, Zachary Baum, Zengqin Zhao, Itty Matthew, Pat LaCour

Proceedings Volume 7122, 71220R (2008) https://doi.org/10.1117/12.801789

KEYWORDS: SRAF, Optical proximity correction, Resolution enhancement technologies, Photomasks, Critical dimension metrology, Metals, Fiber optic illuminators, Printing, Algorithm development, Detection and tracking algorithms

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Proceedings Article | 20 October 2006 Paper

Present challenges and solutions in sampling and correction for 45 nm

Ioana Graur, Mohamed Al-Imam, Pat LaCour

Proceedings Volume 6349, 63491Y (2006) https://doi.org/10.1117/12.691647

KEYWORDS: Optical proximity correction, Tolerancing, Photovoltaics, Printing, Resolution enhancement technologies, Computer simulations, Visualization, Photomasks, Manufacturing, Detection and tracking algorithms

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Proceedings Article | 21 March 2006 Paper

Improvements in post-OPC data constraints for enhanced process corrections

Ryan Burns, Yuping Cui, Zengqin Zhao, Ian Stobert, Pat LaCour, Ayman Yehia, Kareem Madkour, Mohamed Gheith, Ahmed Seoud

Proceedings Volume 6154, 61543G (2006) https://doi.org/10.1117/12.656649

KEYWORDS: Optical proximity correction, Photomasks, Inspection, Lithography, SRAF, Printing, Neck, Visualization, Standards development, Defect inspection

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Current state-of-the-art OPC (optical proximity correction) for 2-dimensional features consists of optimized fragmentation followed by site simulation and subsequent iterations to adjust fragment locations and minimize edge placement error (EPE). Internal and external constraints have historically been available in production quality code to limit the movement of certain fragments, and this provides additional control for OPC. Values for these constraints are left to engineering judgment, and can be based on lithography process limitations, mask house process limitations, or mask house inspection limitations. Often times mask house inspection limitations are used to define these constraints. However, these inspection restrictions are generally more complex than the 2 degrees of freedom provided in existing standard OPC software. Ideally, the most accurate and robust OPC software would match the movement constraints to the defect inspection requirements, as this prevents over-constraining the OPC solution. This work demonstrates significantly improved 2-D OPC correction results based on matching movement constraints to inspection limitations. Improvements are demonstrated on a created array of 2D designs as well as critical level chip designs used in 45nm technology. Enhancements to OPC efficacy are proven for several types of features. Improvements in overall EPE (edge placement error) are demonstrated for several different types of structures, including mushroom type landing pads, iso crosses, and H-bar structures. Reductions in corner rounding are evident for several 2-dimensional structures, and are shown with dense print image simulations. Dense arrays (SRAM) processed with the new constraints receive better overall corrections and convergence. Furthermore, OPC and ORC (optical rules checking) simulations on full chip test sites with the advanced constraints have resulted in tighter EPE distributions, and overall improved printing to target.

Proceedings Article | 17 March 2006 Paper

Implementation of adaptive site optimization in model-based OPC for minimizing ripples

M. Bahnas, M. Al-Imam, A. Seoud, P. LaCour, H. Ragai

Proceedings Volume 6156, 615615 (2006) https://doi.org/10.1117/12.660180

KEYWORDS: Optical proximity correction, Model-based design, Critical dimension metrology, Photomasks, Optimization (mathematics), Lithographic illumination, Lithography, Image processing, Printing, Visualization

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The OPC treatment of aerial mage ripples (local variations in aerial contour relative to constant target edges) is one of the growing issues with very low-k1 lithography employing hard off-axis illumination. The maxima and minima points in the aerial image, if not optimally treated within the existing model based OPC methodologies, could induce severe necking or bridging in the printed layout. The current fragmentation schemes and the subsequent site simulations are rule-based, and hence not optimized according to the aerial image profile at key points. The authors are primarily exploring more automated software methods to detect the location of the ripple peaks as well as implementing a simplified implementation strategy that is less costly. We define this to be an adaptive site placement methodology based on aerial image ripples. Recently, the phenomenon of aerial image ripples was considered within the analysis of the lithography process for cutting-edge technologies such as chromeless phase shifting masks and strong off-axis illumination approaches [3,4]. Effort is spent during the process development of conventional model-based OPC with the mere goal of locating these troublesome points. This process leads to longer development cycles and so far only partial success was reported in suppressing them (the causality of ripple occurrence has not yet fully been explored). We present here our success in the implementation of a more flexible model-based OPC solution that will dynamically locate these ripples based on the local aerial image profile nearby the features edges. This model-based dynamic tracking of ripples will cut down some time in the OPC code development phase and avoid specifying some rule-based recipes. Our implementation will include classification of the ripples bumps within one edge and the allocation of different weights in the OPC solution. This results in a new strategy of adapting site locations and OPC shifts of edge fragments to avoid any aggressive correction that may lead to increasing the ripples or propagating them to a new location. More advanced adaptation will be the ripples-aware fragmentation as a second control knob, beside the automated site placement.

Proceedings Article | 15 March 2006 Paper

EMF simulation with DDM to enable EAPSM masks in 45-nm manufacturing

Patrick Martin, C. Progler, Michael Cangemi, Kostas Adam, George Bailey, Pat LaCour

Proceedings Volume 6154, 61541G (2006) https://doi.org/10.1117/12.659487

KEYWORDS: SRAF, Polarization, Photomasks, Data modeling, Optical proximity correction, Refractive index, Manufacturing, System on a chip, Critical dimension metrology, Resolution enhancement technologies

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Proceedings Article | 14 March 2006 Paper

Impact of process variation on 65nm across-chip linewidth variation

Le Hong, Travis Brist, Pat LaCour, John Sturtevant, Martin Niehoff, Philipp Niedermaier

Proceedings Volume 6156, 61560Q (2006) https://doi.org/10.1117/12.660541

KEYWORDS: Critical dimension metrology, Optical proximity correction, Manufacturing, Tolerancing, Lithography, Printing, Photomasks, Resolution enhancement technologies, Semiconducting wafers, Silicon

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Proceedings Article | 12 May 2005 Paper

Advanced layout fragmentation and simulation schemes for model-based OPCC

James Word, Andres Torres, Pat LaCour

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.598848

KEYWORDS: Optical proximity correction, Photomasks, Resolution enhancement technologies, Lithography, Distortion, Lithographic illumination, Image processing, Semiconducting wafers, Phase shifting, Model-based design

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Proceedings Article | 5 May 2005 Paper

Considerations for the use of defocus models for OPC

John Sturtevant, J. Torres, J. Word, Y. Granik, P. LaCour

Proceedings Volume 5756, (2005) https://doi.org/10.1117/12.598059

KEYWORDS: Optical proximity correction, Manufacturing, Critical dimension metrology, Control systems, Tolerancing, Metals, Reticles, Optical lithography, Lithography, Line edge roughness

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Proceedings Article | 5 May 2005 Paper

Assessing the impact of real world manufacturing lithography variations on post-OPC CD control

John Sturtevant, J. Word, P. LaCour, J. Park, D. Smith

Proceedings Volume 5756, (2005) https://doi.org/10.1117/12.598063

KEYWORDS: Manufacturing, Optical proximity correction, Photomasks, Critical dimension metrology, Scanners, Semiconducting wafers, Control systems, Data modeling, Lithography, Calibration

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Proceedings Article | 6 December 2004 Paper

Prediction of design sensitivity to altPSM lithography across process window

Pat LaCour, Nicolas Cobb

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.592736

KEYWORDS: Photomasks, Optical proximity correction, Lithography, Critical dimension metrology, Computer simulations, Data modeling, Logic, Manufacturing, Calibration, Error analysis

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Proceedings Article | 3 May 2004 Paper

OASIS-based data preparation flows: progress report on containing data size explosion

Steffen Schulze, Pat LaCour, Laurence Grodd

Proceedings Volume 5379, (2004) https://doi.org/10.1117/12.535683

KEYWORDS: Optical proximity correction, Photomasks, Manufacturing, Data processing, Integrated circuits, Standards development, Data conversion, Data compression, Acquisition tracking and pointing, Visualization

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Proceedings Article | 17 December 2003 Paper

Detection and impact of mask manufacturing constraints on OPC efficacy

Patrick LaCour

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518275

KEYWORDS: Optical proximity correction, Photomasks, Manufacturing, Resolution enhancement technologies, Lithography, Inspection, Mask making, Legal, Semiconducting wafers, Control systems

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Proceedings Article | 10 July 2003 Paper

New stream format: progress report on containing data size explosion

Patrick LaCour, Alfred Reich, Kent Nakagawa, Steffen Schulze, Laurence Grodd

Proceedings Volume 5042, (2003) https://doi.org/10.1117/12.485260

KEYWORDS: Photomasks, Manufacturing, Inspection, Integrated circuits, Data storage, Binary data, Design for manufacturability, Visualization, Mask making, Integrated circuit design

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Proceedings Article | 10 July 2003 Paper

Optimization of the data preparation for variable-shaped beam mask writing machines

Steffen Schulze, Patrick LaCour

Proceedings Volume 5042, (2003) https://doi.org/10.1117/12.485261

KEYWORDS: Photomasks, Manufacturing, Vestigial sideband modulation, Beam shaping, Resolution enhancement technologies, Optical proximity correction, Mask making, Data conversion, Optics manufacturing, Lithography

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Proceedings Article | 10 July 2003 Paper

Investigation of product design weaknesses using model-based OPC sensitivity analysis

Sergei Postnikov, Kevin Lucas, Cesar Garza, Karl Wimmer, Patrick LaCour, James Word

Proceedings Volume 5042, (2003) https://doi.org/10.1117/12.485263

KEYWORDS: Optical proximity correction, Reticles, Error analysis, Semiconducting wafers, Model-based design, Optical lithography, Product engineering, Data modeling, Atrial fibrillation, Lithography

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Proceedings Article | 10 July 2003 Paper

Statistical data assessment for optimization of the data preparation and manufacturing

Steffen Schulze, Patrick LaCour

Proceedings Volume 5042, (2003) https://doi.org/10.1117/12.485262

KEYWORDS: Manufacturing, Photomasks, Metrology, Metals, Optimization (mathematics), Statistical analysis, Semiconducting wafers, Critical dimension metrology, Wafer manufacturing, Calibration

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Proceedings Article | 28 May 2003 Paper

Integration of OPC and mask data preparation

Steffen Schulze, Pat LaCour, Norma Rodriguez

Proceedings Volume 5148, (2003) https://doi.org/10.1117/12.514947

KEYWORDS: Photomasks, Optical proximity correction, Resolution enhancement technologies, Databases, Manufacturing, Optical design, Interfaces, Data storage, Etching, Process modeling

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Proceedings Article | 27 December 2002 Paper

GDS-based mask data preparation flow: data volume containment by hierarchical data processing

Steffen Schulze, Pat LaCour, Peter Buck

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.468273

KEYWORDS: Photomasks, Manufacturing, Data processing, Resolution enhancement technologies, Lithography, Process control, Data conversion, Data storage, Optical proximity correction, Data communications

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As the industry enters the development of the 65nm node the pressure on the data path and tapeout flow is growing. Design complexity and increased deployment of resolution enhancement techniques (RET) result in rapidly growing file sizes, which turns what used to be the relatively simple task of mask data preparation into a real bottleneck. This discussion introduces the data preparation scheme in the mask house and analyzes its evolution. Mask data preparation (MDP) has evolved from a flow that only needed to support a single mask lithography tool data format (MEBES) with minimal data alteration steps to one which requires the support of many mask lithography tool data formats and at the same time requires significant data alteration to support the increased precision necessary for today’s advanced masks.. However, the MDP flow developed around the MEBES format and it’s derivatives still exists. The design community has migrated towards the use of hierarchical data formats and processes to control file size and processing time. MDP, which from a file size and process complexity point of view is beginning to look more and more like the advanced RET operations performed on the data prior to mask manufacturing, is still standardized on a flat data format that is poorly optimized for a growing number of mask lithography tools. Based on examples it will be shown how this complicates the data handling further. An alternate data preparation flow accommodating the larger files and re-gaining flexibility for turnaround time (TAT) and throughput management is suggested. This flow utilizes the hierarchical GDS-II format as the exchange format for mask data preparation. It complements the existing flow for the most complex designs. The introduction of a hierarchical exchange format enables the transfer of a number of necessary data preparation steps into the hierarchical domain. Data processing strategies are discussed. The paper illustrates the benefit of hierarchical processing based on GDS-II files with experimental data on file size reduction and TAT improvement for direct format conversions vs. re-fracturing as well as other processing steps. The implications for the established data preparation approaches and potential alternatives for the communication between the mask manufacturer and the customer will be discussed. The potential for further enhancements by converting to a hierarchical format that has a more efficient data representation than the commonly used GDS-II format will be discussed and illustrated.

Proceedings Article | 30 July 2002 Paper

Model-based OPC considering process window aspects: a study

Steffen Schulze, O'Seo Park, Rainer Zimmermann, Ming-Jui Chen, Pat LaCour, Emile Sahouria, Yuri Granik, Nicolas Cobb

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474489

KEYWORDS: Optical proximity correction, Image processing, Process modeling, Lithography, Model-based design, Visualization, Resolution enhancement technologies, Phase shifting, Photomasks, Detection and tracking algorithms

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Proceedings Article | 12 July 2002 Paper

Model-based OPC for sub-resolution assist feature enhanced layouts

Pat LaCour, Edwin Pell, Yuri Granik, Thuy Do

Proceedings Volume 4692, (2002) https://doi.org/10.1117/12.475689

KEYWORDS: SRAF, Optical proximity correction, Calibration, Model-based design, Photomasks, Lithography, Data modeling, Manufacturing, Resolution enhancement technologies, Printing

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Proceedings Article | 12 July 2002 Paper

Chip-level line-width prediction methodology

Pat LaCour, Emile Sahouria, Yuri Granik

Proceedings Volume 4692, (2002) https://doi.org/10.1117/12.475669

KEYWORDS: SRAF, Critical dimension metrology, Resolution enhancement technologies, Calibration, Data modeling, Optical proximity correction, Performance modeling, Manufacturing, Computer aided design, Metals

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Proceedings Article | 2 June 2000 Paper

New process monitor for reticles and wafers: the MEEF meter

Franklin Schellenberg, Pat LaCour, Olivier Toublan, Geoffrey Anderson, Raymond Yip

Proceedings Volume 3998, (2000) https://doi.org/10.1117/12.386471

KEYWORDS: Reticles, Semiconducting wafers, Critical dimension metrology, Cadmium, Photomasks, Metrology, Lithography, Scanning electron microscopy, Photoresist processing, Resolution enhancement technologies

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Proceedings Article | 25 August 1999 Paper

Implementation issues for production OPC

Franklin Schellenberg, Pat LaCour

Proceedings Volume 3748, (1999) https://doi.org/10.1117/12.360254

KEYWORDS: Optical proximity correction, Reticles, Manufacturing, Inspection, Photomasks, Semiconducting wafers, Data processing, Detection and tracking algorithms, Data modeling, Process modeling

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Showing 5 of 36 publications

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