Dr. Pawel Madejczyk Profile

Dr. Pawel Madejczyk

at Wojskowa Akademia Techniczna

SPIE Involvement:

Author

Publications (20)

SPIE Journal Paper | 13 December 2018

High-operating temperature InAsSb/AlSb heterostructure infrared detectors grown on GaAs substrates by molecular beam epitaxy

Malgorzata Kopytko, Emilia Gomolka, Piotr Martyniuk, Pawel Madejczyk, Jaroslaw Rutkowski, Antoni Rogalski

OE, Vol. 57, Issue 12, 127104, (December 2018) https://doi.org/10.1117/12.10.1117/1.OE.57.12.127104

KEYWORDS: Sensors, Heterojunctions, Infrared detectors, Antimony, Gallium arsenide, Indium arsenide, Molecular beam epitaxy, Optical engineering, Absorption, Resistance

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Proceedings Article | 18 September 2018 Presentation + Paper

High-operating temperatures InAsSb/AlSb heterostructure infrared detectors

M. Kopytko, E. Gomółka, P. Martyniuk, P. Madejczyk, J. Rutkowski, A. Rogalski

Proceedings Volume 10766, 1076607 (2018) https://doi.org/10.1117/12.2320539

KEYWORDS: Sensors, Heterojunctions, Antimony, Indium arsenide, Infrared detectors, Absorption, Temperature metrology, Resistance, Gallium arsenide, Sensor performance

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Proceedings Article | 1 September 2017 Paper

Theoretical simulation of the long-wave HgCdTe detector for ultra fast response-operating under zero bias condition and room temperature

Piotr Martyniuk, Paweł Madejczyk, Jarosław Rutkowski

Proceedings Volume 10455, 104550D (2017) https://doi.org/10.1117/12.2281405

KEYWORDS: Mercury cadmium telluride, Sensors, Ultrafast phenomena

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Proceedings Article | 1 September 2017 Paper

Mobility spectrum analysis of HgCdTe epitaxial layers grown by metalorganic chemical vapour deposition

Jarosław Wróbel, Kinga Gorczyca, Gilberto Umana-Membreno, Artur Kębłowski, Jacek Boguski, Piotr Martyniuk, Paweł Madejczyk

Proceedings Volume 10455, 104550T (2017) https://doi.org/10.1117/12.2282836

KEYWORDS: Mercury cadmium telluride, Metalorganic chemical vapor deposition, Spectrum analysis, Doping, Infrared detectors

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SPIE Journal Paper | 24 August 2017

Response time study in unbiased long wavelength HgCdTe detectors

Paweł Madejczyk, Waldemar Gawron, Artur Kębłowski, Piotr Martyniuk, Małgorzata Kopytko, Wioletta Pusz, Dawid Stępień, Jarosław Rutkowski, Adam Piotrowski, Józef Piotrowski, Antoni Rogalski

OE, Vol. 56, Issue 08, 087103, (August 2017) https://doi.org/10.1117/12.10.1117/1.OE.56.8.087103

KEYWORDS: Mercury cadmium telluride, Sensors, Long wavelength infrared, Resistance, Photodiodes, Doping, Diffusion, Heterojunctions, Infrared detectors, Mercury

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Proceedings Article | 16 May 2017 Presentation + Paper

Response time improvement of LWIR HOT MCT detectors

P. Madejczyk, W. Gawron, A. Kębłowski, P. Martyniuk, M. Kopytko, W. Pusz, D. Stępień, J. Rutkowski, A. Piotrowski, J. Piotrowski, A. Rogalski

Proceedings Volume 10177, 1017719 (2017) https://doi.org/10.1117/12.2261786

KEYWORDS: Mercury cadmium telluride, Long wavelength infrared, Heterojunctions, Metalorganic chemical vapor deposition, Infrared detectors, Photodetectors, Photodiodes, Sensors, Doping, Infrared radiation, Infrared sensors, Annealing, Diffusion

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SPIE Journal Paper | 5 January 2017

Uncooled middle wavelength infrared photoconductors based on (111) and (100) oriented HgCdTe

Pawel Madejczyk, Artur Kębłowski, Waldemar Gawron, Piotr Martyniuk, Małgorzata Kopytko, Dawid Stępień, Jaroslaw Rutkowski, Józef Piotrowski, Adam Piotrowski, Antoni Rogalski

OE, Vol. 56, Issue 09, 091602, (January 2017) https://doi.org/10.1117/12.10.1117/1.OE.56.9.091602

KEYWORDS: Mercury cadmium telluride, Photoresistors, Doping, Mercury, Arsenic, Metalorganic chemical vapor deposition, Mid-IR, Infrared radiation, Cadmium, Infrared photography

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Proceedings Article | 20 May 2016 Paper

Progress in MOCVD growth of HgCdTe epilayers for HOT infrared detectors

A. Kębłowski, W. Gawron, P. Martyniuk, D. Stępień, K. Kolwas, J. Piotrowski, P. Madejczyk, M. Kopytko, A. Piotrowski, A. Rogalski

Proceedings Volume 9819, 98191E (2016) https://doi.org/10.1117/12.2229077

KEYWORDS: Mercury cadmium telluride, Metalorganic chemical vapor deposition, Sensors, Long wavelength infrared, Photoresistors, Photodiodes, Doping, Gallium arsenide, Semiconducting wafers, Heterojunctions

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SPIE Journal Paper | 14 October 2015

MOCVD grown HgCdTe barrier detectors for MWIR high-operating temperature operation

Małgorzata Kopytko, Artur Kębłowski, Waldemar Gawron, Piotr Martyniuk, Paweł Madejczyk, Krzysztof Jóźwikowski, Andrzej Kowalewski, Olga Markowska, Antoni Rogalski

OE, Vol. 54, Issue 10, 105105, (October 2015) https://doi.org/10.1117/12.10.1117/1.OE.54.10.105105

KEYWORDS: Sensors, Mercury cadmium telluride, Mid-IR, Metalorganic chemical vapor deposition, Infrared detectors, Doping, Photodetectors, Interfaces, Diffusion, Optical engineering

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Proceedings Article | 4 June 2015 Paper

MOCVD grown HgCdTe p+BnN+ barrier detector for MWIR HOT operation

M. Kopytko, A. Kębłowski, W. Gawron, P. Martyniuk, P. Madejczyk, K. Jóźwikowski, O. Markowska, A. Rogalski

Proceedings Volume 9451, 945117 (2015) https://doi.org/10.1117/12.2192152

KEYWORDS: Mercury cadmium telluride, Sensors, Mid-IR, Metalorganic chemical vapor deposition, Infrared detectors, Doping, Photodetectors, Diffusion, Iodine, Infrared sensors

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SPIE Journal Paper | 31 January 2013

Modeling of midwavelength infrared InAs/GaSb type II superlattice detectors

Piotr Martyniuk, Jaroslaw Wrobel, Elena Plis, Pawel Madejczyk, Waldemar Gawron, Andrzej Kowalewski, Sanjay Krishna, Antoni Rogalski

OE, Vol. 52, Issue 06, 061307, (January 2013) https://doi.org/10.1117/12.10.1117/1.OE.52.6.061307

KEYWORDS: Sensors, PIN photodiodes, Diffusion, Mid-IR, Mercury cadmium telluride, Temperature metrology, Gallium antimonide, Thermal modeling, Infrared radiation, Type II superlattice infrared photodetectors

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The performance of midwavelength infrared type II superllatice InAs/GaSb PIN and nBn (AlGaSb barrier) photodetectors in a reverse bias voltage range and a temperature range from 77 to 240 K is described. The PIN and nBn structures are modeled by a bulk based model, i.e., type II superllatice is treated as an artificial semiconductor material where parameters describing its physical properties are extracted from the experimental data. The model assumes that position of the effective trap energy level depends on temperature, what allowed to obtain a very good fitting to the measurements. Temperature and bias dependent dark current and differential resistance area product of the both devices have been analyzed to investigate contributing mechanisms such as: diffusion, generation-recombination, band-to-band and trap-assisted tunneling that limit the electrical performance of both types of the detectors. The I−V and RA(V) product characteristics of both types of type II superllatice InAs/GaSb photodetectors were found to be dominated by diffusion and generation-recombination currents in the nearly zero-bias region. At medium values of reverse bias, the trap-assisted tunneling reveals its significance, while at higher reverse voltages—the band-to-band tunneling is decisive to I−V and RA(V) characteristics. The fitting procedure allowed to extract both generation-recombination and diffusion components of carrier lifetimes pointing out that the carrier lifetimes range from 2 to 10 ns at T=200 K . Detectivity for T=240 K and V=50 mV was estimated to be 10 9 cmHz 1/2 /W and 4×10 9 cmHz 1/2 /W for PIN and nBn detector, respectively. Finally, type II superlattice InAs/GaSb PIN and nBn structures’ performance is compared to both unipolar barrier nBn HgCdTe detector and bulk HgCdTe photodiodes operated at near-room temperature. It is shown that the performance of SL and HgCdTe photo detectors with a cut-off of about 5 μm is comparable at operation temperatures around 240 K.

Proceedings Article | 31 May 2012 Paper

Dark current modeling of MWIR type-II superlattice detectors

J. Wróbel, P. Martyniuk, E. Plis, P. Madejczyk, W. Gawron, S. Krishna, A. Rogalski

Proceedings Volume 8353, 835316 (2012) https://doi.org/10.1117/12.925074

KEYWORDS: Sensors, Superlattices, Temperature metrology, Stereolithography, Mid-IR, Mercury cadmium telluride, Gallium antimonide, Diffusion, Resistance, PIN photodiodes

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Proceedings Article | 7 May 2009 Paper

Morphology issues of HgCdTe samples grown by MOCVD

P. Madejczyk, A. Piotrowski, W. Gawron, K. Klos, A. Rogalski, J. Rutkowski

Proceedings Volume 7298, 729825 (2009) https://doi.org/10.1117/12.823938

KEYWORDS: Mercury cadmium telluride, Gallium arsenide, Metalorganic chemical vapor deposition, Surface roughness, Mercury, Heterojunctions, Crystals, Surface finishing, Temperature metrology, Scanning electron microscopy

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Proceedings Article | 29 September 2005 Paper

Improvements in MOCVD growth of Hg1–xCdxTe heterostructures for uncooled infrared photodetectors

A. Piotrowski, W. Gawron, K. Klos, J. Pawluczyk, J. Piotrowski, P. Madejczyk, A. Rogalski

Proceedings Volume 5957, 59570J (2005) https://doi.org/10.1117/12.625631

KEYWORDS: Mercury, Cadmium, Tellurium, Heterojunctions, Metalorganic chemical vapor deposition, Infrared radiation, Doping, Photodetectors, Mercury cadmium telluride, Infrared photography

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Proceedings Article | 25 March 2005 Paper

MOCVD HgCdTe heterostructures for uncooled infrared photodetectors

A. Piotrowski, Pawel Madejczyk, Waldemar Gawron, K. Klos, Jaroslaw Pawluczyk, Miroslaw Grudzien, Jozef Piotrowski, Antoni Rogalski

Proceedings Volume 5732, (2005) https://doi.org/10.1117/12.593337

KEYWORDS: Mercury, Doping, Mercury cadmium telluride, Metalorganic chemical vapor deposition, Heterojunctions, Tellurium, Arsenic, Infrared radiation, Iodine, Cadmium

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Proceedings Article | 22 October 2003 Paper

Doping control in HgCdTe epitaxial layers

Pawel Madejczyk, Leszek Kubiak, Waldemar Gawron

Proceedings Volume 5136, (2003) https://doi.org/10.1117/12.519770

KEYWORDS: Mercury, Mercury cadmium telluride, Tellurium, Annealing, Doping, Liquid phase epitaxy, Ions, Chemical elements, Antimony, Etching

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Proceedings Article | 22 October 2003 Paper

Assessment of the LPE growth of HgCdTe from Te-rich melt by the tipping method

Leszek Kubiak, Pawel Madejczyk, Piotr Martyniuk, Jaroslaw Rutkowski

Proceedings Volume 5136, (2003) https://doi.org/10.1117/12.519674

KEYWORDS: Liquid phase epitaxy, Mercury cadmium telluride, Mercury, Photodiodes, Tellurium, FT-IR spectroscopy, Temperature metrology, Ions, Semiconducting wafers, Diodes

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Proceedings Article | 17 April 2001 Paper

Impact of the LWIR photodiodes geometry on their basic parameters

Jakub Wenus, Jaroslaw Rutkowski, Krzysztof Adamiec, Leszek Kubiak, Pawel Madejczyk

Proceedings Volume 4413, (2001) https://doi.org/10.1117/12.425457

KEYWORDS: Photodiodes, Diffusion, Heterojunctions, Mercury cadmium telluride, Liquid phase epitaxy, Resistance, Long wavelength infrared, Quantum efficiency, Etching, Spectroscopy

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Proceedings Article | 17 April 2001 Paper

Influence of p-type MCT layer on junction formation during ion etching

Pawel Madejczyk, Jaroslaw Rutkowski, Waldemar Gawron, Leszek Kubiak, Jakub Wenus

Proceedings Volume 4413, (2001) https://doi.org/10.1117/12.425455

KEYWORDS: Etching, Ions, Arsenic, Photodiodes, Mercury, Annealing, Liquid phase epitaxy, Mercury cadmium telluride, Chemical species, Diffusion

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Proceedings Article | 17 April 2001 Paper

LPE growth of Hg1-xCdxTe heterostructures from Te-rich solutions

Leszek Kubiak, Krzysztof Adamiec, Pawel Madejczyk, Jakub Wenus, Piotr Martyniuk, Jaroslaw Rutkowski

Proceedings Volume 4413, (2001) https://doi.org/10.1117/12.425410

KEYWORDS: Heterojunctions, Liquid phase epitaxy, Mercury cadmium telluride, Mercury, FT-IR spectroscopy, Photodiodes, Cadmium, Thermography, Tellurium, Quartz

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Showing 5 of 20 publications

Proceedings Volume Editor (1)

SPIE Conference Volume | 10 August 2001

International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals

Conference Committee Involvement (1)

International Conference on Solid State Crystals: Growth, Characterization, and Applications of Single Crystals

9 October 2000 | Zakopane, Poland

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