Dr. Peter D. Brooker Profile

Dr. Peter D. Brooker

Litho Modeling Engineer at Synopsys Inc

SPIE Involvement:

Author | Instructor

Publications (24)

Proceedings Article | 21 March 2019 Presentation + Paper

Improved validation and optimization of physics-based NTD compact modeling flows

Folarin Latinwo, Delian Yang, Cheng-En (Rich) Wu, Peter Brooker, Yulu Chen, Hua Song, Kevin Lucas

Proc. SPIE. 10961, Optical Microlithography XXXII

KEYWORDS: Lithography, Optical lithography, Data modeling, Calibration, 3D modeling, Photoresist materials, Photoresist developing

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Due to the semiconductor industry’s ever increasing need for finer resolution and improved critical dimension (CD) control, negative tone development (NTD) photoresists (resists) have been adopted for several advanced applications in lithographic patterning. NTD resists enable brightfield imaging by using an organic solvent developer to penetrate and remove the unexposed regions of the resist [1]. For certain critical patterning layers, such as metal trenches and vias, NTD resists are able to provide better resist imaging quality compared to the previous positive tone development (PTD) resist process. However, there are several additional engineering difficulties which must be addressed for an NTD resist process. Specifically, NTD resists have low contrast organic solvent development and in an NTD process the material remaining on the wafer substrate is exposed resist which has been substantially transformed both chemically and mechanically. Therefore, the remaining exposed resist shows significantly more complex physical behavior than the remaining PTD resist and these behaviors require substantial improvement in an OPC (compact) model’s physical modeling accuracy in order to match wafer data and trends [2,3]. Additionally, these more complex resist behaviors place further requirements on the physical validation of OPC modeling inference. In this paper, we present results of our work to understand and improve the optimization and physical validation of physics-based NTD compact modeling flows by utilizing new methods for analysis and automation. We utilize a complete compact model flow containing physics-based resist model forms for chemically amplified resist (CAR) exposure, CAR reaction-diffusion, resist top-loss due to exposure combined with post-exposure bake (PEB), low contrast organic solvent development of resist, and mechanical deformation effects in multiple process steps. We present solid evidence that this physically-based flow has been validated for accuracy and predictability by comparing it to several experimental NTD datasets and to results of rigorous 3D lithography simulation models which were trained to fit other experimental NTD data. We additionally compared key physics-based model forms from the compact model to the more complex full time-based moving surface NTD models of the rigorous 3D simulation. We next analyzed the key physics-based compact model forms for sensitivity to input testpattern type, layout and mask dimension (e.g., linearity and MEEF), traditional dose-focus variations, as well as systematic and random noise in CD metrology. We present the results of this study and make recommendations for minimum testpattern and overall process space data to include in NTD compact model datasets. We also present flow benefits obtained from automating different validation tests including the usefulness of employing rigorous lithography simulation NTD results early in the compact modeling flow to improve overall model quality. [1] S-H. Lee, et all. Understanding dissolution behavior of 193-nm photoresists in organic solvent developers.

Proceedings Article | 20 March 2019 Paper

Investigation of machine learning for dual OPC and assist feature printing optimization

Marco Guajardo, Yulu Chen, Peter Brooker, C.-E. Wu, Kevin Hooker, Folarin Latinwo, Kevin Lucas

Proc. SPIE. 10962, Design-Process-Technology Co-optimization for Manufacturability XIII

KEYWORDS: Lithography, Data modeling, Calibration, 3D modeling, Printing, Photomasks, Machine learning, Optical proximity correction, Semiconducting wafers

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Proceedings Article | 9 September 2013 Paper

Efficient full-chip mask 3D model for off-axis illumination

Hongbo Zhang, Qiliang Yan, Lin Zhang, Ebo Croffie, Peter Brooker, Qian Ren, Yongfa Fan

Proc. SPIE. 8880, Photomask Technology 2013

KEYWORDS: Lithography, Lithographic illumination, Cadmium, Calibration, Error analysis, 3D modeling, Photomasks, Semiconducting wafers, Process modeling, Light

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Proceedings Article | 18 April 2013 Paper

Design-based metrology for development and manufacturing applications

Peter Brooker, Michael Lee, Ezequiel Vidal Russel, Shimon Levi, Sylvain Berthiaume, William Stanton, Travis Brist

Proc. SPIE. 8681, Metrology, Inspection, and Process Control for Microlithography XXVII

KEYWORDS: Reticles, Metrology, Data modeling, Manufacturing, Feature extraction, Scanning electron microscopy, Dysprosium, Optical proximity correction, Semiconducting wafers, Data analysis

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Proceedings Article | 1 April 2013 Paper

7nm node EUV predictive study of mask LER transference to wafer

D. Civay, E. Nash, U. Klostermann, T. Wallow, P. Mangat, H. Koh, P. Brooker, J. Siebert, H. Levinson

Proc. SPIE. 8679, Extreme Ultraviolet (EUV) Lithography IV

KEYWORDS: Lithography, Calibration, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Nanoimprint lithography, Critical dimension metrology, Line edge roughness, Semiconducting wafers, Stochastic processes

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Proceedings Article | 5 April 2012 Paper

Automated SEM recipe generation for OPC applications

Sylvain Berthiaume, Travis Brist, Peter Brooker, William Stanton, Brian Ward, Shimon Levi, Amit Siany

Proc. SPIE. 8324, Metrology, Inspection, and Process Control for Microlithography XXVI

KEYWORDS: Metrology, Data modeling, Manufacturing, Scanning electron microscopy, Photomasks, Optical proximity correction, Computer aided design, Critical dimension metrology, Semiconducting wafers, Electronic design automation

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Proceedings Article | 14 October 2011 Paper

Integrated advanced hotspot analysis techniques in the post-OPC verification flow

Makoto Miyagi, Peter Brooker, Chander Sawh, Travis Brist, Kunal Taravade

Proc. SPIE. 8166, Photomask Technology 2011

KEYWORDS: Wafer-level optics, Lithography, Data modeling, Computer simulations, 3D modeling, Photomasks, Source mask optimization, Optical proximity correction, Semiconducting wafers, Tolerancing

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Proceedings Article | 2 April 2010 Paper

Metrology data cleaning and statistical assessment flow for modeling applications

Brian Ward, Sylvain Berthiaume, Travis Brist, Peter Brooker

Proc. SPIE. 7638, Metrology, Inspection, and Process Control for Microlithography XXIV

KEYWORDS: Metrology, Diffractive optical elements, Data modeling, Calibration, Scanning electron microscopy, Data visualization, Optical proximity correction, Statistical modeling, Process modeling, Data analysis

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Proceedings Article | 11 May 2009 Paper

Quantification of electron-beam proximity effects using a virtual direct write environment

Martin Schulz, Peter Brooker, Alex Zepka, Gary Meyers

Proc. SPIE. 7379, Photomask and Next-Generation Lithography Mask Technology XVI

KEYWORDS: Lithography, Electron beam lithography, Point spread functions, Scattering, Fourier transforms, Monte Carlo methods, Optical simulations, Photoresist processing, Semiconducting wafers, Stochastic processes

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Proceedings Article | 16 March 2009 Paper

Analysis of topography effects on lithographic performance in double patterning applications

J. Siebert, P. Brooker, T. Schmoeller, T. Klimpel

Proc. SPIE. 7274, Optical Microlithography XXII

KEYWORDS: Lithography, Etching, Reflectivity, Computer simulations, Photomasks, Double patterning technology, Line edge roughness, Photoresist processing, Semiconducting wafers, Tin

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Proceedings Article | 20 October 2006 Paper

Impact of AFM scan artifacts on photolithographic simulation

Tod Robinson, John Lewellen, David Lee, Peter Brooker

Proc. SPIE. 6349, Photomask Technology 2006

KEYWORDS: Metrology, Chromium, Computer simulations, Image analysis, Atomic force microscopy, Solids, Image transmission, Photomasks, Critical dimension metrology, Semiconducting wafers

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Proceedings Article | 20 May 2006 Paper

Application of photolithographic simulation and a mask repair system in a production environment

Tod Robinson, John Lewellen, Ron Bozak, David Lee, Peter Brooker

Proc. SPIE. 6283, Photomask and Next-Generation Lithography Mask Technology XIII

KEYWORDS: Refractive index, Data modeling, Calibration, Etching, Quartz, Error analysis, Atomic force microscopy, Bridges, Photomasks, Phase shifts

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Proceedings Article | 15 March 2006 Paper

In quest of predictive lithography simulation

Christian Kalus, Hinderk Buß, Peter Brooker

Proc. SPIE. 6154, Optical Microlithography XIX

KEYWORDS: Mathematical modeling, Lithography, Optical lithography, Calibration, Diffusion, Photoresist materials, Differential equations, Finite element methods, Systems modeling, Process modeling

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Proceedings Article | 5 November 2005 Paper

Integration of photolithographic simulation and a mask repair system into a single concurrent work cell

Tod Robinson, Peter Brooker, Ron Bozak, David Lee

Proc. SPIE. 5992, 25th Annual BACUS Symposium on Photomask Technology

KEYWORDS: Lithography, Quartz, Image processing, Chromium, Computer simulations, Atomic force microscopy, Solids, Photomasks, Semiconducting wafers, Binary data

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Proceedings Article | 28 June 2005 Paper

Validation of Nu-Flare e-beam emulation software in a simulation environment

Daniel Ritter, Peter Brooker, John Lewellen, Young-Mog Ham, Patrick Martin, Rand Cottle

Proc. SPIE. 5853, Photomask and Next-Generation Lithography Mask Technology XII

KEYWORDS: Reticles, Cadmium, Backscatter, Electrons, Inspection, Computer simulations, Monte Carlo methods, Photomasks, Optical proximity correction, Mask making

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Proceedings Article | 28 June 2005 Paper

Improved cycle time of mask repair by optimizing nanomachining with photolithographic imaging simulation

Peter Brooker, Tod Robinson, John Lewellen, Bob Naber, Ron Bozak, David Lee

Proc. SPIE. 5853, Photomask and Next-Generation Lithography Mask Technology XII

KEYWORDS: Lithography, Reticles, Phase shifting, Quartz, Chromium, Image transmission, Photomasks, Image enhancement, Semiconducting wafers, Phase shifts

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Proceedings Article | 16 June 2005 Paper

Gaussian beam writing strategy: accuracy of using the shape beam simulator SELID for Gaussian beam systems

J. Tortai, J. Thiault, R. Tiron, L. Mollard, Stephan Haefele, Sergey Vychub, John Lewellen, Peter Brooker

Proc. SPIE. 5835, 21st European Mask and Lithography Conference

KEYWORDS: Electron beam lithography, Gaussian beams, Polymethylmethacrylate, Molecules, Electrons, Diffusion, Monte Carlo methods, Photomasks, Optical simulations, Beam shaping

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Proceedings Article | 6 May 2005 Paper

High-throughput hybrid optical maskless lithography: all-optical 32-nm node imaging

M. Fritze, B. Tyrrell, T. Fedynyshyn, M. Rothschild, P. Brooker

Proc. SPIE. 5751, Emerging Lithographic Technologies IX

KEYWORDS: Lithography, Optical lithography, Image resolution, Photoresist materials, Photomasks, Maskless lithography, Critical dimension metrology, Binary data, Hybrid optics, Projection lithography

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Proceedings Article | 17 December 2003 Paper

Fourier optic imaging equations for the immersion case

Peter Brooker

Proc. SPIE. 5256, 23rd Annual BACUS Symposium on Photomask Technology

KEYWORDS: Lithography, Microscopes, Reticles, Microfluidics, Refraction, Near field diffraction, Immersion lithography, Fourier optics, Semiconducting wafers, Liquids

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Proceedings Article | 17 December 2003 Paper

157-nm alternating phase-shifting mask design and high-NA images

Yung-Tin Chen, Jeff Meute, Kim Dean, Peter Brooker

Proc. SPIE. 5256, 23rd Annual BACUS Symposium on Photomask Technology

KEYWORDS: Reticles, Phase shifting, Polarization, Etching, Scanning electron microscopy, Photomasks, Critical dimension metrology, Neodymium, Semiconducting wafers, Phase shifts

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Proceedings Article | 17 December 2003 Paper

Using location of diffraction orders to predict performance of future scanners

Peter Brooker

Proc. SPIE. 5256, 23rd Annual BACUS Symposium on Photomask Technology

KEYWORDS: Lithography, Diffraction, Reticles, Scanners, Manufacturing, Printing, Objectives, Photomasks, Semiconducting wafers, Phase shifts

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Proceedings Article | 26 June 2003 Paper

Practical resist model calibration

Pary Baluswamy, Amy Weatherly, Dave Kewley, Peter Brooker, Mike Pauzer

Proc. SPIE. 5040, Optical Microlithography XVI

KEYWORDS: Lithography, Monochromatic aberrations, Refractive index, Data modeling, Calibration, Diffusion, Cadmium sulfide, Optimization (mathematics), Semiconducting wafers, Process modeling

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Proceedings Article | 1 July 2002 Paper

Vendor capability for low-thermal-expansion mask substrates for EUV lithography

Kenneth Blaedel, John Taylor, Scott Hector, Pei-yang Yan, Arun Ramamoorthy, Peter Brooker

Proc. SPIE. 4688, Emerging Lithographic Technologies VI

KEYWORDS: Polishing, Optical spheres, Interferometers, Manufacturing, Inspection, Reflectivity, Photomasks, Extreme ultraviolet lithography, Zerodur, Surface finishing

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Proceedings Article | 14 September 2001 Paper

Roles of NA, sigma, and lambda in low-k1 aerial image formation

Peter Brooker

Proc. SPIE. 4346, Optical Microlithography XIV

KEYWORDS: Diffraction, Light sources, Reticles, Image acquisition, Far-field diffraction, Objectives, Critical dimension metrology, Spherical lenses, Semiconducting wafers, Light

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Showing 5 of 24 publications

Conference Committee Involvement (4)

Optical Microlithography XXVIII

24 February 2015 | San Jose, California, United States

Optical Microlithography XXVII

25 February 2014 | San Jose, California, United States

Optical Microlithography XXVI

26 February 2013 | San Jose, California, United States

Optical Microlithography XXV

14 February 2012 | San Jose, California, United States

Course Instructor

SC707A: Basics of Optical Imaging in Microlithography: A Hands-On Approach

A basic 'hands on' lecture is presented, in which students are given various optical components, including a source, lenses, gratings, etc., that are used to build a personal optical bench. Basic concepts of imaging, resolution, coherence factor, on-axis illumination, off-axis illumination, binary masks, phase-shift masks, etc., are examined by the students operating in small groups under the direction of the instructor. These concepts are related to real lithographic systems using basic principles and simulation. This course is intended to provide a foundation for the follow-on course, "Imaging and Optics Fundamentals in Microlithography" (SC706).

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SC707: Basics of Optical Imaging in Microlithography: A Hands-on Approach

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SC707B: Basics of Optical Imaging in Microlithography: A Hands-On Approach

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