Dr. Peter Hudek Profile

Dr. Peter Hudek

at IMS Nanofabrication GmbH

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Publications (22)

SPIE Journal Paper | 10 February 2024 Open Access

Multi-beam mask writing opens up new fields of application, including curvilinear mask pattern for high numerical aperture extreme ultraviolet lithography

Mathias Tomandl, Christoph Spengler, Peter Hudek, Christof Klein, Hans Loeschner, Elmar Platzgummer

JM3, Vol. 23, Issue 01, 011205, (February 2024) https://doi.org/10.1117/12.10.1117/1.JMM.23.1.011205

KEYWORDS: Extreme ultraviolet, Distortion, Lenses, Nanofabrication, Industry, Magnetism, Industrial applications, Lithography, Extreme ultraviolet lithography, Projection systems

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Proceedings Article | 1 November 2022 Paper

New registration calibration strategies for MBMW tools by PROVE measurements

Michael Haberler, Peter Hudek, Michal Jurkovic, Elmar Platzgummer, Christoph Spengler, Lena Bachar, Steffen Steinert, Hui-Wen Lu-Walther, Dirk Beyer

Proceedings Volume 12472, 124720L (2022) https://doi.org/10.1117/12.2641517

KEYWORDS: Image registration, Calibration, Photomasks, Metrology, Overlay metrology, Electron beams, Extreme ultraviolet lithography, Distortion, Semiconductors

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SPIE Journal Paper | 28 October 2021

Multi-beam mask writer exposure optimization for EUV mask stacks

Peter Hudek, Michal Jurkovic, Pavlina Choleva, Witold Wroczewski, Masahiro Hashimoto, Kazunori Ono, Toru Fukui, Toshiya Takahashi, Kotaro Takahashi

JM3, Vol. 20, Issue 04, 041402, (October 2021) https://doi.org/10.1117/12.10.1117/1.JMM.20.4.041402

KEYWORDS: Photomasks, Extreme ultraviolet, Point spread functions, Photoresist processing, Extreme ultraviolet lithography, Scattering, Monte Carlo methods, Lithography, Electron beam lithography, Backscatter

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Proceedings Article | 22 February 2021 Presentation

MBMW exposure optimization for EUV mask stacks

Peter Hudek, Michal Jurkovic, Pavlina Choleva, Witold Wroczewski, Masahiro Hashimoto, Kazunori Ono, Toru Fukui, Toshiya Takahashi, Kotaro Takahashi

Proceedings Volume 11610, 116100T (2021) https://doi.org/10.1117/12.2584588

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Extreme ultraviolet, Scattering, Point spread functions, Photoresist processing, Numerical simulations, Lithography, Chemically amplified resists

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EUV Lithography makes substantial progress in optimizing (i) tool, (ii) mask blanks, and (iii) resist materials to support the next generation EUV imaging performance. Novel EUV masks use a variety of absorbers and capping layers fabricated on mirroring multilayer stacks coated on ULE substrate. 50 keV electron multi-beams are used to write high-resolution patterns in an appropriate resist coated over the absorber layer stack. The main goal of multi-beam mask writing (MBMW) has been the precise geometry control and faithful reproduction of the intended pattern on the substrate. The highly conform MBMW resist-patterning process needs to understand the absorbed intensity distribution from the electron scattering in the resist/substrate stack, as well as the consecutive radiation-chemical effects induced by the electron energy spread together with the nonlinear dissolution behavior of the resist. It is difficult to exactly calculate the relative contribution of these factors separately, but their overall effect can be modeled by the analytic 'point spread' response function (PSF) for the resist. The ultimate resolution is determined by the amount of laterally- and back-scattered electrons from specific target compositions. These interaction events cause proximity, fogging, local heating, and surface charging effects, defining the accurate pattern. Simulations have shown alterations in the absorbed energy distributions of EUV masks with different stacks, and the experiments approved the results from the calculations. We present results of resist response to the electron multi-beam exposure based on statistical numerical simulation on different EUV-stacks directly compared with the corresponding numerical lithographic parameters extracted from the experimental resist screening. Consequently, all input parameters for MBMW writing corrections were precisely specified to the corresponding absorbed energy distribution signature of the concrete EUV mask. The experiments were performed with the IMS MBMW-101 ALPHA tool in a high dose positive-tone chemically amplified resist (pCAR), provided by FUJIFILM, and coated on experimental EUV masks containing different novel stack compositions as prepared at HOYA Corporation.

Proceedings Article | 12 November 2018 Presentation + Paper

Mask process correction validation for multi-beam mask lithography

Ingo Bork, Peter Buck, Christian Bürgel, Bhardwaj Durvasula, Stefan Eder-Kapl, Peter Hudek, Michal Jurkovic, Jan Klikovits, Elmar Platzgummer, Jed Rankin, Rao Nageswara, Murali Reddy, Christoph Spengler

Proceedings Volume 10810, 108100K (2018) https://doi.org/10.1117/12.2503284

KEYWORDS: Photomasks, SRAF, Calibration, Cadmium, Lithography, Double patterning technology, Data modeling, Etching, Vestigial sideband modulation, Scanning electron microscopy

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Proceedings Article | 20 October 2016 Paper

Mask manufacturing of advanced technology designs using multi-beam lithography (Part 1)

Michael Green, Young Ham, Brian Dillon, Bryan Kasprowicz, Ik Boum Hur, Joong Hee Park, Yohan Choi, Jeff McMurran, Henry Kamberian, Daniel Chalom, Jan Klikovits, Michal Jurkovic, Peter Hudek

Proceedings Volume 10032, 1003205 (2016) https://doi.org/10.1117/12.2247941

KEYWORDS: Photomasks, Manufacturing, Optical proximity correction, SRAF, Inspection, Metals, Optics manufacturing, Scanning electron microscopy, Logic, Lithography

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Proceedings Article | 26 September 2016 Paper

Mask manufacturing of advanced technology designs using multi-beam lithography (part 2)

Michael Green, Young Ham, Brian Dillon, Bryan Kasprowicz, Ik Boum Hur, Joong Hee Park, Yohan Choi, Jeff McMurran, Henry Kamberian, Daniel Chalom, Jan Klikovits, Michal Jurkovic, Peter Hudek

Proceedings Volume 9985, 99850R (2016) https://doi.org/10.1117/12.2243407

KEYWORDS: Photomasks, SRAF, Optical proximity correction, Logic, Manufacturing, Metals, Inspection, Image processing, Information operations, Scanning electron microscopy

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Proceedings Article | 9 July 2015 Paper

Investigation of local registration performance of IMS Nanofabrication’s Multi-Beam Mask Writer

Daniel Chalom, Jan Klikovits, David Geist, Peter Hudek, Stefan Eder-Kapl, Mehdi Daneshpanah, Frank Laske, Stefan Eyring, Klaus-Dieter Roeth

Proceedings Volume 9658, 965805 (2015) https://doi.org/10.1117/12.2196388

KEYWORDS: Photomasks, Metrology, Image registration, Nanofabrication, Calibration, Reticles, Beam shaping, Manufacturing, Lithography, Model-based design

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Proceedings Article | 17 May 2013 Paper

MEMS pressure sensor fabricated by advanced bulk micromachining techniques

Gabriel Vanko, Peter Hudek, Johann Zehetner, Jaroslav Dzuba, Pavlina Choleva, Martin Vallo, Ivan Rýger, Tibor Lalinský

Proceedings Volume 8763, 87632U (2013) https://doi.org/10.1117/12.2017499

KEYWORDS: Silicon carbide, Sensors, Microelectromechanical systems, Heterojunctions, Laser ablation, Bulk micromachining, Silicon, Gallium nitride, Field effect transistors, Etching

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Proceedings Article | 28 March 2008 Paper

MAGIC: a European program to push the insertion of maskless lithography

L. Pain, B. Icard, S. Tedesco, B. Kampherbeek, G. Gross, C. Klein, H. Loeschner, E. Platzgummer, R. Morgan, S. Manakli, J. Kretz, C. Holhe, K.-H. Choi, F. Thrum, E. Kassel, W. Pilz, K. Keil, J. Butschke, M. Irmscher, F. Letzkus, P. Hudek, A. Paraskevopoulos, P. Ramm, J. Weber

Proceedings Volume 6921, 69211S (2008) https://doi.org/10.1117/12.772472

KEYWORDS: Semiconducting wafers, Lithography, Photomasks, Manufacturing, Electron beams, Electron beam lithography, Nanofabrication, Computed tomography, Prototyping, Maskless lithography

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Proceedings Article | 27 January 2005 Paper

Achieving CDU requirement for 90-nm technology node and beyond with advanced mask making process technology

San-De Tzu, Chung-Hsing Chang, Wen-Chi Chen, Karl-Heinz Kliem, Peter Hudek, Dirk Beyer

Proceedings Volume 5645, (2005) https://doi.org/10.1117/12.577008

KEYWORDS: Photomasks, Critical dimension metrology, Mask making, Opacity, Etching, Phase measurement, Lithography, Line edge roughness, Scattering, Inspection

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Proceedings Article | 20 August 2004 Paper

Mask patterning process using the negative tone chemically amplified resist TOK OEBR-CAN024

Mathias Irmscher, Dirk Beyer, Joerg Butschke, Peter Hudek, Corinna Koepernik, Jason Plumhoff, Emmanuel Rausa, Mitsuru Sato, Peter Voehringer

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557686

KEYWORDS: Etching, Opacity, Photoresist processing, Chromium, Scattering, Electron beam lithography, Photomasks, Optical lithography, Calibration, Chemically amplified resists

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Proceedings Article | 2 June 2004 Paper

Shaped beam technology for nano-imprint mask lithography

Peter Hudek, Dirk Beyer, Timothy Groves, Olaf Fortagne, William Dauksher, David Mancini, Kevin Nordquist, Douglas Resnick

Proceedings Volume 5504, (2004) https://doi.org/10.1117/12.568035

KEYWORDS: Electron beam lithography, Lithography, Photomasks, Photoresist processing, Etching, Chromium, Beam shaping, Nanotechnology, Image processing, Semiconducting wafers

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Proceedings Article | 17 December 2003 Paper

90-nm mask making processes using the positive tone chemically amplified resist FEP171

Joerg Butschke, Dirk Beyer, Chris Constantine, Peter Dress, Peter Hudek, Mathias Irmscher, Corinna Koepernik, Christian Krauss, Jason Plumhoff, Peter Voehringer

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518043

KEYWORDS: Opacity, Mask making, Electron beam lithography, Photoresist processing, Etching, Chemically amplified resists, Optical proximity correction, Line edge roughness, Photomasks, Scattering

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Proceedings Article | 28 August 2003 Paper

Investigation of e-beam sensitive negative-tone chemically amplified resists for binary mask making

Mathias Irmscher, Lothar Berger, Dirk Beyer, Joerg Butschke, Peter Dress, Thomas Hoffmann, Peter Hudek, Corinna Koepernik, Martin Tschinkl, Peter Voehringer

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504185

KEYWORDS: Photomasks, Etching, Coating, Mask making, Chemically amplified resists, Binary data, Line edge roughness, Photoresist processing, Optical proximity correction, Scanning electron microscopy

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Proceedings Article | 27 December 2002 Paper

Back to square 9: a demonstration of 9-in. reticle capablilty

Kevin Cummings, Ludger Schneider-Stoermann, Ute Buttgereit, Mathias Irmscher, Dietmar Mueller, Peter Hudek, Dirk Beyer, Bernd Brendel, John Whittey, Benjamin Eynon, Jason Harsch, Chris Constantine, Kirk Miller

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467495

KEYWORDS: Reticles, Photomasks, Critical dimension metrology, Semiconducting wafers, Standards development, Scanning electron microscopy, Lithography, Metrology, Manufacturing, Chromium

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Proceedings Article | 27 December 2002 Paper

Mask patterning using chemically amplified resists and the novel STEAG HamaTech Blank Coater ASR5000

Corinna Koepernik, Dirk Beyer, Peter Dress, Thomas Hoffmann, Peter Hudek, Mathias Irmscher, Christian Krauss, Bernd Leibold, Dietmar Mueller, Christian Reuter, Reinhard Springer, Jakob Szekeresch, Peter Voehringer

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467424

KEYWORDS: Coating, Photoresist processing, Mask making, Chemically amplified resists, Photomasks, Electron beam lithography, Capillaries, Binary data, Critical dimension metrology, Etching

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Proceedings Article | 11 March 2002 Paper

Tool and process optimization for 100-nm maskmaking using a 50-kV variable shaped e-beam system

Dirk Beyer, Dirk Loeffelmacher, Gernot Goedl, Peter Hudek, Bernd Schnabel, Thomas Elster

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458252

KEYWORDS: Photomasks, Monochromatic aberrations, Etching, Electron beam lithography, Lithography, Critical dimension metrology, Beam shaping, Dry etching, Monte Carlo methods, Photoresist processing

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Proceedings Article | 5 June 1998 Paper

Comparative study of resist heating and proximity effect influence on CD variation in 30-kV EBL

Sergey Babin, Peter Hudek, Ivan Kostic, Igor Kuzmin

Proceedings Volume 3331, (1998) https://doi.org/10.1117/12.309629

KEYWORDS: Electron beam lithography, Temperature metrology, Lithography, Critical dimension metrology, Beam shaping, Computing systems, Distortion, Photomasks, Photoresist processing, Electron beams

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Proceedings Article | 7 July 1997 Paper

CD variation in 30-kV EBL due to resist heating: experiment and simulation

Sergey Babin, Peter Hudek, Ivan Kostic, Igor Kuzmin

Proceedings Volume 3048, (1997) https://doi.org/10.1117/12.275800

KEYWORDS: Electron beam lithography, Critical dimension metrology, Distortion, Laser scattering, Scattering, Computing systems, Lithography, Electron beams, 3D modeling, Software development

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Proceedings Article | 23 September 1996 Paper

Chemically amplified deep UV resists for micromachining

Peter Hudek, Ivo Rangelow, Ivan Kostic, Piotr Grabiec, Feng Shi

Proceedings Volume 2879, (1996) https://doi.org/10.1117/12.251206

KEYWORDS: Etching, Silicon, Reactive ion etching, Photoresist processing, Electron beam lithography, Plasma, Plasma etching, Lithography, Photomasks, Deep ultraviolet

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Proceedings Article | 23 September 1996 Paper

Fabrication of piezoresistive-sensed AFM cantilever probe with integrated tip

Ivo Rangelow, Feng Shi, Peter Hudek, Teodor Gotszalk, Piotr Grabiec, Piotr Dumania

Proceedings Volume 2879, (1996) https://doi.org/10.1117/12.251232

KEYWORDS: Silicon, Etching, Sensors, Atomic force microscopy, Photoresist materials, Plasma etching, Semiconducting wafers, Plasma, Wheatstone bridges, Resistors

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Showing 5 of 22 publications

Conference Committee Involvement (3)

ASDAM 2012 the 9th Int'l Conf. on Advanced Semiconductor Devices and Microsystems

11 November 2012 |

MNE 2012

16 September 2012 |

MNE 2011

19 September 2011 |

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