Photo collection efficiency (proportional to the sensitivity of the photo sensor) and color crosstalk, both optical and electrical, are extremely important CMOS image sensor (CIS) pixel parameters. In measured QE data, photo collection efficiency and crosstalk information are mixed and it is difficult to disentangle the contributions of each to the raw QE spectrum. In our pixel optimization work, it is desirable to extract each component and to further separate the contribution of the color filter array (CFA) from the fundamental processes in and above the Silicon. In this paper, a new approach is introduced to extract the QE data related to the Si processing and decompose it into two components, the Mono QE and crosstalk spectrum, respectively. Using this approach one may gauge the impact of pixel structure differences, realize the sensor design goals to achieve the targeted system performance.
The design and performance of a new 1024-element PtSi IR linear array and detector head available from EG&G Reticon are described. The self-scanned Schottky barrier detector array provides a 1.1 to 5.0 micrometers spectral response, 60% fill factor, 25 micrometers pitch and 100:1 slit-like aspect ratio for efficient coupling to laboratory spectrometers. Pixel-to-pixel non- uniformities of 0.4% rms and saturation charge levels of 9 picocoulombs are achieved. The LN2-cooled detector head used to house the array features a fast focal ratio, short window-to-detector separation and quasi-standard mounting flange. Both analog video and temperature sensing outputs are provided. Timing may be internally or externally controlled. In the former mode, only +/- 15 VDC and +5 VDC power inputs are needed. In the latter mode, external clock and sync inputs as well as power are required. The sensor, dewar, and coldshielding is described; as well as the analog, digital and temperature sensing electronics. A discussion of system-wide performance data and technical specifications concludes the review.