We present the first steps toward the development of MoS2/Si heterojunctions photovoltaics, essentially for integrated photonic devices applications.
Therefore, we conjugate numerical device simulation, optical and structural characterizations, and density functional theory calculations. Through numerical device simulation, we show the potential of such solar cells, with attainable power conversion efficiencies of about 20%. Optical and structural characterizations of thin 2H-MoS2 layers deposited on SiO2 80nm/Si (001) substrates provides a path for the optimization of the 2D MoS2 material. With DFT calculations, we open the door for the optimization of the MoS2/Si interface, which is crucial for the device performances.
Detection of spin diffusion length in different materials has been launched tremendously so far. But due to the difficulty of obtaining a high-quality semiconductor (SC) layer on ferromagnetic metals, until now most of the studies of spin diffusion transport in SC were only limited on lateral structure devices. Here, by using ultra-high vacuum wafer-bonding technique, a vertical structure of CoFeB/MgO/Si/Pt is fabricated successfully and based on which, the spin diffusion transport is demonstrated at room temperature by spin pumping. With the Pt layer on top to detect the inverse spin hall voltage for different thickness of n-Si layer, the spin diffusion length is determined to be 3.8 μm, which is comparable with the value reported in lateral devices. Furthermore, our experiments reveal the existence of interface state at MgO/Si interface, which is essentially important to build the model of spin-mixing conductance for spin-pumping into Si.
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