Dr. Pierre-Jerome Goirand Profile

Dr. Pierre-Jerome Goirand

at STMicroelectronics

SPIE Involvement:

Author

Publications (13)

Proceedings Article | 10 April 2013 Paper

Toward 7nm target on product overlay for C028 FDSOI technology

Maxime Gatefait, Bertrand Le-Gratiet, Pierre Jerome Goirand, Auguste Lam, Richard Van Haren, Anne Pastol, Maya Doytcheva, Xing Lan Liu, Jan Beltman

Proceedings Volume 8681, 868105 (2013) https://doi.org/10.1117/12.2011099

KEYWORDS: Semiconducting wafers, Overlay metrology, Reticles, Etching, Contamination, Metrology, Scanners, Lithography, Data modeling, Distortion

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Proceedings Article | 10 April 2013 Paper

Scatterometry-based dose and focus decorrelation: applications to 28nm contact holes patterning intrafield focus investigations

B. Orlando, N. Spaziani, N. Socquet, R. Bouyssou, M. Gatefait, P.J. Goirand

Proceedings Volume 8681, 868118 (2013) https://doi.org/10.1117/12.2011122

KEYWORDS: 3D modeling, Scatterometry, Optical lithography, Critical dimension metrology, Scatter measurement, Lithography, Semiconducting wafers, Process control, Silicon, Silicon carbide

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Proceedings Article | 10 April 2013 Paper

Overlay improvement through lot-based feed-forward: applications to various 28nm node lithography operations

B. Orlando, M. Gatefait, J. De-Caunes, P.J. Goirand

Proceedings Volume 8681, 868117 (2013) https://doi.org/10.1117/12.2011117

KEYWORDS: Lithography, Overlay metrology, 193nm lithography, Semiconducting wafers, Double patterning technology, Optical alignment, Optical lithography, Scanners, Remote sensing, Control systems

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Proceedings Article | 7 March 2008 Paper

Improving lithography intra wafer CD for C045 implant layers using STI thickness feed forward?

Jean Massin, Bastien Orlando, Maxime Gatefait, Jean-Damien Chapon, Bertrand Le-Gratiet, Blandine Minghetti, Pierre-Jérôme Goirand

Proceedings Volume 6924, 69244M (2008) https://doi.org/10.1117/12.775708

KEYWORDS: Oxides, Critical dimension metrology, Metrology, Chemical mechanical planarization, Logic, Semiconducting wafers, Etching, Optical lithography, Lithography, Scanners

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Proceedings Article | 2 April 2007 Paper

Early look into device level imaging with beyond water immersion

Will Conley, Scott Warrick, Cesar Garza, Pierre-Jerome Goirand, Jan-Willem Gemmink, David Van Steenwinckel

Proceedings Volume 6520, 65201L (2007) https://doi.org/10.1117/12.714341

KEYWORDS: Polarization, Refractive index, Photoresist materials, Water, Imaging devices, Lithography, Photomasks, Semiconductors, Photoresist developing, Manufacturing

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Proceedings Article | 27 March 2007 Paper

32-nm SOC printing with double patterning, regular design, and 1.2 NA immersion scanner

Yorick Trouiller, Vincent Farys, Amandine Borjon, Jérôme Belledent, Christophe Couderc, Frank Sundermann, Jean-Christophe Urbani, Yves Rody, Christian Gardin, Jonathan Planchot, Will Conley, Pierre-Jerome Goirand, Scott Warrick, Frédéric Robert, Gurwan Kerrien, Florent Vautrin, Bill Wilkinson, Mazen Saied, Emic Yesilada, Patrick Montgomery, Laurent Le Cam, Catherine Martinelli

Proceedings Volume 6520, 65201D (2007) https://doi.org/10.1117/12.714116

KEYWORDS: Optical lithography, Polarization, Transistors, Double patterning technology, Resolution enhancement technologies, Printing, System on a chip, Logic, Scanners, Optical proximity correction

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SPIE Journal Paper | 1 April 2004

Complementary double-exposure technique (CODE): a way to print 80- and 65-nm gate levels using a double-exposure binary mask approach

Serdar Manakli, Yorick Trouiller, Olivier Toublan, Patrick Schiavone, Yves Rody, Pierre-Jerome Goirand

JM3, Vol. 3, Issue 02, (April 2004) https://doi.org/10.1117/12.10.1117/1.1683359

KEYWORDS: Photomasks, Binary data, Printing, Electroluminescence, Scanners, Resolution enhancement technologies, Visualization, Semiconducting wafers, Manufacturing, Optical proximity correction

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Proceedings Article | 10 July 2003 Paper

Using the CODE technique to print complex two-dimensional structures in a 90-nm ground rule process

Serdar Manakli, Yorick Trouiller, Olivier Toublan, Patrick Schiavone, Yves Rody, Pierre Jerome Goirand

Proceedings Volume 5042, (2003) https://doi.org/10.1117/12.485529

KEYWORDS: Photomasks, Printing, Neodymium, Electroluminescence, Binary data, Scanners, Resolution enhancement technologies, Optical proximity correction, Visualization, Manufacturing

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Proceedings Article | 26 June 2003 Paper

Gate imaging for 0.09-μm logic technology: comparison of single exposure with assist bars and the CODE approach

Yorick Trouiller, Jerome Belledent, J. D. Chapon, V. Rousset, Yves Rody, Serdar Manakli, Pierre-Jerome Goirand

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485527

KEYWORDS: Printing, Photomasks, Lithographic illumination, Logic, Critical dimension metrology, Lithography, Optical proximity correction, Binary data, Electroluminescence, Scattering

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Proceedings Article | 27 December 2002 Paper

Complementary double-exposure technique (CODE) solutions to the two-dimensional structures of 90-nm node

Serdar Manakli, Yorick Trouiller, Olivier Toublan, Patrick Schiavone, Yves Rody, Pierre Jerome Goirand

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.468203

KEYWORDS: Photomasks, Resolution enhancement technologies, Binary data, Optical proximity correction, Manufacturing, Scanners, Printing, Cadmium, Integrated circuits, Lithographic illumination

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Proceedings Article | 30 July 2002 Paper

Impact of synchronization errors on overlay and CD control

Emmanuelle Luce, Sebastien Mougel, Pierre-Jerome Goirand, Jerome Depre

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474634

KEYWORDS: Critical dimension metrology, Modeling, Optical lithography, Electroluminescence, Semiconducting wafers, Scanners, Reticles, Optical proximity correction, Tolerancing, Photoresist processing

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Proceedings Article | 30 July 2002 Paper

ArF imaging with off-axis illumination and subresolution assist bars: a compromise between mask constraints and lithographic process constraints

Yorick Trouiller, J. Serrand, Corinne Miramond, Yves Rody, Serdar Manakli, Pierre-Jerome Goirand

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474539

KEYWORDS: Scattering, Photomasks, Critical dimension metrology, Lithography, Electroluminescence, Lithographic illumination, Printing, Scanners, Photoresist processing, Lutetium

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Proceedings Article | 30 July 2002 Paper

Complementary double-exposure technique (CODE): a way to print 80-nm gate level using a double-exposure binary mask approach

Serdar Manakli, Yorick Trouiller, Olivier Toublan, Patrick Schiavone, Corinne Miramond, Yves Rody, Frank Sundermann, J. D. Chapon, Pierre-Jerome Goirand

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474597

KEYWORDS: Photomasks, Binary data, Electroluminescence, Resolution enhancement technologies, Neodymium, Visualization, Scanners, Critical dimension metrology, Manufacturing, Printing

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Showing 5 of 13 publications

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