Dr. Ping-Hung Lu Profile

Dr. Ping-Hung Lu

Senior Research & Development Manager at EMD Performance Materials Corp

SPIE Involvement:

Author

Publications (35)

Proceedings Article | 1 April 2009 Paper

Reworkable spin-on trilayer materials: optimization of rework process and solutions for manufacturability

Ruzhi Zhang, Allen Timko, John Zook, Yayi Wei, Lyudmila Pylneva, Yi Yi, Chenghong Li, Hengpeng Wu, Dalil Rahman, Douglas McKenzie, Clement Anyadiegwu, Ping-Hung Lu, Mark Neisser, Ralph Dammel, Ron Bradbury, Timothy Lee

Proc. SPIE. 7273, Advances in Resist Materials and Processing Technology XXVI

KEYWORDS: Polymers, Silicon, Coating, Chemistry, Manufacturing, Inspection, Fourier transforms, Photoresist materials, Semiconducting wafers, Defect inspection

Read Abstract +

Trilayer stacks with alternating etch selectivity were developed and extensively investigated for high NA immersion lithography at 32nm node and beyond. The conveyance of pattern transfer function from photoresist to Si-containing bottom anti-reflective coating (Si-BARC) and carbonrich underlayer hard-mask (UL) elegantly solved the small etch budget issue for ultra-thin photoresists in immersion lithography. However, due to the hybrid nature of Si-BARC, many different behaviors were observed in comparison to conventional BARC. Lithographic performance, stability, and reworkability were among the most challenging issues for trilayer scheme. Despite of the rapid improvement in lithographic performance and stability of trilayer materials reported by several papers, the rework and cleaning of trilayer materials by wet chemistry remained a challenging problem for manufacturability. The dual function requirement of reflection control and pattern transfer (i.e. hard-masking) for spin-on Si-BARC mandates hybrid materials. Si-BARC containing both organic moiety and inorganic backbone were extensively studied and demonstrated excellent performance. However, the hybrid nature of Si-BARC necessitates the revisit of different wet chemistries and process adjustment is essential to achieve desirable results. In addition, the similarity in chemical structures between Si-BARC and low-κ dielectrics demands subtle rework differentiation by wet chemistry from a chemistry point of view. In our development, we strived to identify rework solutions for trilayer materials in both front-end-of-line (FEOL) and back-end-of-line (BEOL) applications. Rework solutions including diluted HF, Piranha, and low-κ compatible strippers were extensively investigated. The optimization of solution mixture ratios and processing conditions was systematically studied. Thorough defect inspection after rework was performed to ensure the readiness for manufacturability. Extensive Piranha rework study on stack wafers and monitor wafers were carried out and excellent results are reported.

Proceedings Article | 1 April 2009 Paper

Radiation sensitive developable bottom anti-reflective coatings (DBARC): recent results

Francis Houlihan, Alberto Dioses, Takanori Kudo, Meng Li, Lin Zhang, Sumathy Vasanthan, Srinivasan Chakrapani, Deepa Parthasarathy, Charito Antonio, Edward Ng, Ping-Hung Lu, Mark Neisser, Munirathna Padmanaban

Proc. SPIE. 7273, Advances in Resist Materials and Processing Technology XXVI

KEYWORDS: Polymers, Coating, Fourier transforms, Electroluminescence, Plasma etching, Head-mounted displays, Arsenic, Binary data, Prototyping, Bottom antireflective coatings

Read Abstract +

Proceedings Article | 4 December 2008 Paper

Spin-on trilayer scheme: enabling materials for extension of ArF immersion lithography to 32nm node and beyond

Ruzhi Zhang, Allen Timko, Lyudmila Pylneva, Jennifer Loch, Hengpeng Wu, David Abdallah, Richard Collett, Yayi Wei, Dalil Rahman, Douglas McKenzie, Ping-Hung Lu, Mark Neisser

Proc. SPIE. 7140, Lithography Asia 2008

KEYWORDS: Lithography, Etching, Polymers, Silicon, Coating, Reflectivity, Fourier transforms, Photoresist materials, Immersion lithography, Semiconducting wafers

Read Abstract +

Proceedings Article | 15 April 2008 Paper

Etching spin-on trilayer masks

David Abdallah, Shinji Miyazaki, Aritaka Hishida, Allen Timko, Douglas McKenzie, Dalil Rahman, WooKyu Kim, Lyudmila Pylneva, Hengpeng Wu, Ruzhi Zhang, Ping-Hung Lu, Mark Neisser, Ralph Dammel

Proc. SPIE. 6923, Advances in Resist Materials and Processing Technology XXV

KEYWORDS: Carbon, Lithography, Etching, Silicon, Fourier transforms, Oxygen, Photoresist materials, Photomasks, Reactive ion etching, Semiconducting wafers

Read Abstract +

Proceedings Article | 15 April 2008 Paper

Second-generation radiation sensitive 193-nm developable bottom antireflective coatings (DBARC): recent results

Francis Houlihan, Alberto Dioses, Lin Zhang, Joseph Oberlander, Alexandra Krawicz, Sumathy Vasanthan, Meng Li, Yayi Wei, PingHung Lu, Mark Neisser

Proc. SPIE. 6923, Advances in Resist Materials and Processing Technology XXV

KEYWORDS: Reticles, Polymers, Silicon, Coating, Reflectivity, Fourier transforms, Plasma etching, Prototyping, Plasma, Bottom antireflective coatings

Read Abstract +

Proceedings Article | 2 April 2007 Paper

Spin-on trilayer approaches to high NA 193nm lithography

D. Abdallah, D. McKenzie, A. Timko, A. Dioses, F. Houlihan, D. Rahman, S. Miyazaki, R. Zhang, W. Kim, H. Wu, L. Pylneva, P.-H. Lu, M. Neisser, R. Dammel, J. Biafore

Proc. SPIE. 6519, Advances in Resist Materials and Processing Technology XXIV

KEYWORDS: Carbon, Lithography, Antireflective coatings, Etching, Silicon, Reflectivity, Fourier transforms, Photomasks, Silicon carbide, Semiconducting wafers

Read Abstract +

Proceedings Article | 2 April 2007 Paper

Second-generation radiation sensitive developable bottom anti-reflective coatings (DBARC) and implant resists approaches for 193-nm lithography

Francis Houlihan, Alberto Dioses, Medhat Toukhy, Andrew Romano, Joseph Oberlander, HengPeng Wu, Salem Mullen, Alexandra Krawicz, PingHung Lu, Mark Neisser

Proc. SPIE. 6519, Advances in Resist Materials and Processing Technology XXIV

KEYWORDS: Lithography, Polymers, Resistance, Fourier transforms, Fluorine, Photoresist processing, Semiconducting wafers, Arsenic, Prototyping, Bottom antireflective coatings

Read Abstract +

Proceedings Article | 23 March 2007 Paper

Radiation sensitive developable bottom anti-reflective coating (DBARC) for 193nm lithography: first generation

Medhat Toukhy, Joseph Oberlander, Salem Mullen, PingHung Lu, Mark Neisser

Proc. SPIE. 6519, Advances in Resist Materials and Processing Technology XXIV

KEYWORDS: Lithography, Polymers, Image processing, Coating, Plasma etching, Photoresist processing, Semiconducting wafers, Standards development, 193nm lithography, Bottom antireflective coatings

Read Abstract +

Proceedings Article | 23 March 2007 Paper

Development of nanocomposite resists with high plasma etch resistance

Chunwei Chen, Hong Zhuang, Ping-Hung Lu, Mark Neisser, Georg Pawlowski

Proc. SPIE. 6519, Advances in Resist Materials and Processing Technology XXIV

KEYWORDS: Silica, Nanoparticles, Etching, Particles, Resistance, Photoresist materials, Deep reactive ion etching, Plasma etching, Nanocomposites, Plasma

Read Abstract +

Proceedings Article | 29 March 2006 Paper

The effects of etch chemistry on the etch rates of ArF BARC products

Hong Zhuang, Dave Abdallah, Zhong Xiang, Hengpeng Wu, Jianhui Shan, Ping-Hung Lu, Mark Neisser, Eugene Karwacki, Bing Ji, Peter Badowski

Proc. SPIE. 6153, Advances in Resist Technology and Processing XXIII

KEYWORDS: Etching, Polymers, Ions, Gases, Chemistry, Oxygen, Photoresist materials, Reactive ion etching, Semiconducting wafers, Anisotropic etching

Read Abstract +

Proceedings Article | 4 May 2005 Paper

All i-line lift-off T-gate process and materials

Medhat Toukhy, Ping-Hung Lu, Salem Mullen

Proc. SPIE. 5753, Advances in Resist Technology and Processing XXII

KEYWORDS: Lithography, Metals, Gallium arsenide, Diffusion, Coating, Materials processing, Fourier transforms, Photomasks, Photoresist processing, Semiconducting wafers

Read Abstract +

Proceedings Article | 4 May 2005 Paper

A comparison of new thick photoresists for solder bumping

Warren Flack, Ha-Ai Nguyen, Mark Neisser, Ernesto Sison, Ping Hung Lu, Bob Plass, Toshimichi Makii, Yoshio Murakami

Proc. SPIE. 5753, Advances in Resist Technology and Processing XXII

KEYWORDS: Packaging, Lithography, Reticles, Chemistry, Scanning electron microscopy, Photoresist materials, Semiconducting wafers, Electroplating, Photoresist developing, Standards development

Read Abstract +

The performance requirements for ultra-thick photoresists are rapidly increasing with the dramatic growth in lithographic applications that require electroplating processes. Two of the main applications for ultra-thick photoresists are advanced packaging and nanotechnology (MEMS). Flipchip packaging has become widely adopted to address electrical device performance and chip form factor considerations. The growth in the nanotechnology market is driven by a wide range of products, which include accelerometers, ink jet print heads, biomedical sensors and optical switches. The requirements of thick photoresists for solder electroplating are significantly different from typical thin photoresists used in front end of line applications. As the photoresist becomes thicker, processing times increase for many process steps. Photospeed gets slower due to the requirements for more chemical reactions per area of coating. Coating uniformity and edge bead control also become more difficult as photoresist films get thicker and time delay issues between process steps can arise. This result has led to the requirement for special photoresist formulations for thick photoresist films. These are traditionally positive tone DNQ-Novolak materials such as AZ 50XT. Such materials can be designed to work for a particular range of thicknesses, but as the desired thicknesses increases the processing times can become very long for high volume manufacturing. Many new bumping schemes require photoresists in a 60 to 70 μm thickness range. While DNQ-Novolak chemistry can work, there is a desire for faster alternatives to improve total cost of ownership (COO) of the lithography cell. In order to have fast photospeeds and reasonable processing times a chemistry that is very photo efficient is needed. Negative tone cross linking chemistries, which can give tens of thousands of chemical events for one photochemical event, provide excellent photospeed and process times. Positive tone chemically amplified photoresist provide hundreds or thousands of chemical events per photochemical event. They are somewhat slower in photospeed than free radical materials, but still provide reasonable photospeeds. This paper compares the lithography and processing performance of these two newer types of thick film chemistries with the performance of a state of the art DNQ-Novolak thick film photoresist. The lithographic performance of these three ultra-thick positive photoresists were optimized to control critical dimensions (CD), sidewall angles and aspect ratios. The experimental results includes process latitude studies, electroplating performance and stripping performance. The general result is that negative free radical chemistry has the edge in photo-speed and processing times, but positive photoresist is better for stripping and perhaps for process integration.

Proceedings Article | 14 May 2004 Paper

High-temperature negative resist tunable for new lift-off applications

Medhat Toukhy, PingHung Lu, Kate Kao, Robert Plass, Ching-Hui Chen, Gerald Faerber

Proc. SPIE. 5376, Advances in Resist Technology and Processing XXI

KEYWORDS: Lithography, Deep ultraviolet, Organic light emitting diodes, Metals, Chemistry, Resistance, Deposition processes, Photoresist processing, Semiconducting wafers, 193nm lithography

Read Abstract +

Proceedings Article | 12 June 2003 Paper

TMAH soak process optimization with DNQ positive resist for lift-off applications

Salem Mullen, Medhat Toukhy, Ping-Hung Lu, Sunit Dixit, Paul Sellers

Proc. SPIE. 5039, Advances in Resist Technology and Processing XX

KEYWORDS: Metrology, Metals, Coating, Scanning electron microscopy, Photoresist materials, Photoresist processing, Semiconducting wafers, Photoresist developing, Floods, Standards development

Read Abstract +

Proceedings Article | 12 June 2003 Paper

Optimized thick film processing for bumping layers

Stanley Wanat, Robert Plass, Ernesto Sison, Hong Zhuang, Ping-Hung Lu, Clifford Hamel, Jeffrey Guevremont

Proc. SPIE. 5039, Advances in Resist Technology and Processing XX

KEYWORDS: Metals, Copper, Photoresist materials, Solids, Connectors, Plating, Thin film coatings, Photoresist processing, Semiconducting wafers, Photoresist developing

Read Abstract +

Proceedings Article | 24 July 2002 Paper

High resolution negative i-line resist and process for metal lift-off applications

Medhat Toukhy, Salem Mullen, Ping-Hung Lu, Mark Neisser

Proc. SPIE. 4690, Advances in Resist Technology and Processing XIX

KEYWORDS: Lithography, Polymers, Metals, Image processing, Gallium arsenide, Photoresist processing, Semiconducting wafers, Resist chemistry, Resolution enhancement technologies, Absorption

Read Abstract +

Proceedings Article | 23 June 2000 Paper

Studies directed to the design and development of a high-energy implant resist

Warren Montgomery, PingYong Xu, PingHung Lu, Salem Methsun, Ralph Dammel, Nara Meyyappan, Noriyuki Kobayashi, David Pritchard

Proc. SPIE. 3999, Advances in Resist Technology and Processing XVII

KEYWORDS: Lithography, Metals, Ultraviolet radiation, Ions, Photoresist materials, Ion beams, Photoresist processing, Semiconducting wafers, Arsenic, Photoresist developing

Read Abstract +

Proceedings Article | 11 June 1999 Paper

Performance impact of novel polymeric dyes in photoresist applications

Ping-Hung Lu, Salem Mehtsun, John Sagan, Jianhui Shan, Eleazar Gonzalez, Shuji Ding, Dinesh Khanna

Proc. SPIE. 3678, Advances in Resist Technology and Processing XVI

KEYWORDS: Thin films, Lithography, Quartz, Polymers, Reflectivity, Chromophores, Photoresist materials, Dysprosium, Semiconducting wafers, Absorption

Read Abstract +

Proceedings Article | 29 June 1998 Paper

Novolak resin analogs for resist applications

Stan Wanat, Kathryn Jensen, Ping-Hung Lu, Douglas McKenzie