We reported a couple of methods to improve electron injection from the ITO electrode, thereby to fabricate efficient
inverted bottom emission organic light emitting diodes (IBOLEDs). The first method is to use an n-doped electron
transporting layer (ETL) as the electron injection layer. Electron only device characteristics and UPS measurements
confirmed that B3PYMPM homo-junction has the lowest injection barrier at the interface among three different ETLs,
resulting in the highest maximum EQE of 19.8% at low voltage in IBOLEDs. The energy barrier between n-ETL and
ETL is one of the most important factors for high performance inverted OLEDs. The second method is to use an organic
p-n junction as an electron injection layer, where the p-n junction generated electrons and holes under reverse bias,
which corresponds to the forward bias in the OLEDs. The organic p-n junction composed of a p-CuPc/n-Bphen layer
shows almost the same electron injection characteristics for the cathodes with different work functions whereas the
injection characteristics of the n-Bphen EIL significantly depend on the work function of the cathode. These facts
indicate that the organic p-n junction can be efficiently applied as an electron injection layer for high performance
flexible organic electronics, regardless of the electrodes.
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