We report an all-printed flexible carbon nanotube (CNT) thin-film transistor (TFT). All the CNT TFT components,
including the source and drain electrodes, the TFT transport channel, and the gate electrode, are printed on a flexible
substrate at room temperature. A high ON/OFF ratio of over 103 was achieved. The all printed CNT-TFT also exhibits
bias-invariant transconductance over a certain gate bias range. This all-printed process avoids the conventional
procedures in lithography, vacuum, and metallization, and offers a promising technology for low-cost, high-throughput
fabrication of large-area flexible electronics on a variety of substrates, including glass, Si, indium tin oxide and plastics.
In this paper, a high operating temperature (HOT) broadband InAs/GaAs quantum dot
(QD) infrared photodetector (QDIP) is reported. The QDIP covers a wide detection
spectrum range from 3 μm to 10 μm. A large photoresponsivity of 12.0 A/W at a low
bias voltage of 0.15V and a high peak specific photodetectivity D* of 1.2×108 cmHz1/2/W
are obtained at a high operating temperature of 298 K.
We report a longwave infrared quantum dot infrared photodetector working at room temperature (RT) (298K). A
photoresponsivity and photodetectivity of 0.02A/W and 9.0x106 cmHz1/2/W was achieved at 298K with a low bias
voltage of -0.1V. The RT QDIP avoids bulk and heavy cryogenic cooling systems and thus enables the development
of ultra-compact IR sensing and imaging systems.
We report a voltage-tunable multispectral quantum dot infrared photodetector with
integrated carbon-nanotube based flexible electronics. Such integrated photodetection
and flexible electronics would not only enhance the detectors functionalities, but also
reduce the time delay by performing image processing locally, making it promising for
adaptive multi-spectral photodetection and sensing.
We report a longwave infrared quantum dot infrared photodetector working at room
temperature (RT) (298K). A high photoresponsivity and photodetectivity of 0.02A/W and
9.0x106 cmHz1/2/W were achieved at 298K with a low bias voltage of -0.1V. The RT
QDIP avoids bulk and heavy cryogenic cooling systems and thus enables the
development of ultra-compact IR sensing and imaging systems.
A voltage-tunable multispectral 320×256 infrared imaging focal plane array (FPA) is reported. The multispectral FPA is
based on InAs/GaAs quantum dots infrared photodetectors (QDIP) with different capping layers (i.e. GaAs and In0.20Ga0.80As), corresponding to the extended middle-wave infrared (EMIR, 5-8 μm) and long-wave infrared (LWIR, 8-
12 μm) detection bands, respectively. The FPA shows a sensitivity of 8.2 mV/C a noise equivalent temperature
difference of 172 mK at the FPA operating temperature of 67 K. Thermal images were obtained at both the EMIR and
the LWIR bands at a low FPA bias of -0.7V. Voltage-tunable multispectral imaging was also achieved. Since each of the
detection spectral of the QD FPA can be individually tuned by engineering its QD capping layer, this approach offers
greater flexibility in designing detection spectrum of a multispectral FPA.