We present the development of a high-power laser source operating at 532 nm produced by frequency doubling a Ybdoped fiber amplifier. The fiber amplifier has a multistage design, and uses large mode area Yb-doped fibers as the gain medium to produce > 2 kW of laser power at 1064 nm. The amplifier design is optimized to reduce non-linear effects, and operates at linewidths as narrow as 45 GHz. By focusing the fiber amplifier output into an LBO crystal, more than 1 kW of 532 nm light is produced. Single pass conversion efficiencies as high as 54% are achieved providing a unique combination of high power and high quality 532 nm laser source. The 532 nm laser is fiber coupled, making it an ideal source for industrial applications.
Optically-pumped semiconductor (OPS) lasers are power-scalable, wavelength-flexible, infrared brightness converters.
Adding intra-cavity frequency doubling turns them into efficient, low noise, high power visible laser sources. We report
on a laser combining an InGaAs gain medium with an LBO nonlinear crystal to produce more than 20 Watt CW in
single transverse mode at 532 nm. Efficient cooling of the single gain chip using advanced mounting techniques is the
key to making the laser reliable at high CW powers. A rugged and compact package withstands significant
environmental excursions. The laser's low noise makes it suitable for demanding Ti:Sapphire pumping applications.
Optically-pumped semiconductor lasers provide efficient laser sources in the ultraviolet by intra-cavity nonlinear
frequency tripling. A laser combining InGaAs gain media with LBO nonlinear crystals produces hundreds of mW CW at
355 nm. A compact package that combines thermal and opto-mechanical stability is the key to making this laser robust
and manufacturable. A temperature controlled, monolithic aluminum base supports opto-mechanical mounts made from
low expansion alloys and ceramics to create a resonator that can withstand substantial environmental excursions.
Power-scaling of optically pumped semiconductor lasers (OPSL's) using a resonator with multiple OPS chips is
demonstrated. With a 3-chip cavity and intra-cavity second harmonic generation, we obtain 55W of TEM00 mode output
at 532 nm and 66 W in multi-transverse mode. In addition, we describe the design of a periodic dynamically stable
resonator that allows scaling to more than 4 chips and demonstrate that the output power scales with the number of chips
in the cavity.
Optically pumped semiconductor lasers offer significant advantages with respect to all traditional diode-pumped solid
state lasers (including fiber lasers) in regards to wavelength flexibility, broad pump tolerance, efficient spectral and
spatial brightness conversion and high power scaling. In this talk we will describe our recent progress in the lab and
applying this technology to commercial systems. Results include diversified wavelengths from 460 to 570nm, power
scaling to >60W of CW 532nm, and the launch of a low cost 5W CW visible source for forensic applications.
We discuss a compact RGB source with ouput power of several watts per color consisting of a red (638 nm) diode and OPS lasers with blue (460 nm) and green (530) nm output. Suitability for display applications is shown by replacing the lamp of a standard Rear Projection TV.
We present results on the first application of upconversion dynamics for short pulse generation in visible solid state lasers. We also describe prospects for passive mode-locking mechanisms based on cooperative nonlinearities and instabilities.