Dr. Rainer Pforr Profile

Dr. Rainer Pforr

at RP Consulting

SPIE Involvement:

Author

Publications (31)

Proceedings Article | 16 March 2009 Paper

Multiple layer CD control treatment

Anka Birnstein, Christoph Röpke, Martin Sczyrba, Rainer Pforr, Mario Hennig, Guy Ben-Zvi, Erez Graitzer, Avi Cohen

Proceedings Volume 7274, 727422 (2009) https://doi.org/10.1117/12.814123

KEYWORDS: Signal attenuation, Photomasks, Semiconducting wafers, Critical dimension metrology, Scanners, Multilayers, Objectives, Deep ultraviolet, Lenses, Chemical elements

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Proceedings Article | 30 October 2007 Paper

Performance comparison of techniques for intra-field CD control improvement

Rainer Pforr, Mario Hennig, Jens Reichelt, Guy Ben Zvi, Martin Sczyrba

Proceedings Volume 6730, 673032 (2007) https://doi.org/10.1117/12.746695

KEYWORDS: Photomasks, Critical dimension metrology, Semiconducting wafers, Signal attenuation, Scanners, Scanning electron microscopy, Glasses, Data corrections, Transmittance, Manufacturing

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Proceedings Article | 20 October 2006 Paper

Image degradation due to phase effects in chromeless phase lithography

Karsten Bubke, Martin Sczyrba, K. Park, Ralf Neubauer, Rainer Pforr, Jens Reichelt, Ralf Ziebold

Proceedings Volume 6349, 634913 (2006) https://doi.org/10.1117/12.685983

KEYWORDS: Photomasks, Diffraction, Polarization, Etching, Lithography, Semiconducting wafers, Lithographic illumination, Printing, Phase shifts, Electroluminescence

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Proceedings Article | 20 May 2006 Paper

Irradiation resistance of intravolume shading elements embedded in photomasks used for CD uniformity control by local intra-field transmission attenuation

Eitan Zait, Guy Ben-Zvi, Vladimir Dmitriev, Sergey Oshemkov, Rainer Pforr, Mario Hennig

Proceedings Volume 6283, 62830E (2006) https://doi.org/10.1117/12.681741

KEYWORDS: Photomasks, Critical dimension metrology, Deep ultraviolet, Semiconducting wafers, Signal attenuation, Resistance, Excimer lasers, Glasses, Manufacturing, Scanners

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Intra-field CD variation is, besides OPC errors, a main contributor to the total CD variation budget in IC manufacturing. It is caused mainly by mask CD errors. In advanced memory device manufacturing the minimum features are close to the resolution limit resulting in large mask error enhancement factors hence large intra-field CD variations. Consequently tight CD Control (CDC) of the mask features is required, which results in increasing significantly the cost of mask and hence the litho process costs. Alternatively there is a search for such techniques (1) which will allow improving the intrafield CD control for a given moderate mask and scanner imaging performance. Currently a new technique (2) has been proposed which is based on correcting the printed CD by applying shading elements generated in the substrate bulk of the mask by ultrashort pulsed laser exposure. The blank transmittance across a feature is controlled by changing the density of light scattering pixels. The technique has been demonstrated to be very successful in correcting intra-field CD variations caused by the mask and the projection system (2). A key application criterion of this technique in device manufacturing is the stability of the absorbing pixels against DUV light irradiation being applied during mask projection in scanners. This paper describes the procedures and results of such an investigation. To do it with acceptable effort a special experimental setup has been chosen allowing an evaluation within reasonable time. A 193nm excimer laser with pulse duration of 25 ns has been used for blank irradiation. Accumulated dose equivalent to 100,000 300 mm wafer exposures has been applied to Half Tone PSM mask areas with and without CDC shadowing elements. This allows the discrimination of effects appearing in treated and untreated glass regions. Several intensities have been investigated to define an acceptable threshold intensity to avoid glass compaction or generation of color centers in the glass. The impact of the irradiation on the mask transmittance of both areas has been studied by measurements of the printed CD on wafer using a wafer scanner before and after DUV irradiation.

Proceedings Article | 21 March 2006 Paper

Alternating PSM balancing characterization: a comparative study using AIMS and wafer print data

Martin Sczyrba, Roderick Köhle, Karsten Bubke, Mario Hennig, Rainer Pforr, Ralf Neubauer

Proceedings Volume 6154, 615448 (2006) https://doi.org/10.1117/12.656222

KEYWORDS: Photomasks, Scanners, Semiconducting wafers, Diffraction, Phase shifts, Etching, Cadmium sulfide, Critical dimension metrology, Polarization, Quartz

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Proceedings Article | 20 March 2006 Paper

Verifying high NA polarization OPC treatment on wafer

Ralph Schlief, Mario Hennig, Rainer Pforr, Jörg Thiele, Max Hoepfl

Proceedings Volume 6154, 61543F (2006) https://doi.org/10.1117/12.656621

KEYWORDS: Optical proximity correction, Polarization, Data modeling, Scanners, SRAF, Photomasks, Semiconducting wafers, Process modeling, Printing, Scanning electron microscopy

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Proceedings Article | 28 June 2005 Paper

Aerial image based mask defect detection in dense array structures

Roderick Kohle, Mario Hennig, Rainer Pforr, Karsten Bubke, Martin Sczyrba, Arndt Durr

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617303

KEYWORDS: Photomasks, Printing, Semiconducting wafers, Inspection, Defect detection, Imaging arrays, Diffraction gratings, Diffraction, Microscopes, Optical filters

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Proceedings Article | 28 June 2005 Paper

Simulation of quartz phase etch affect on performance of ArF chrome-less hard shifter for 65-nm technology

K. Park, Martin Sczyrba, Karsten Bubke, Rainer Pforr

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617205

KEYWORDS: Etching, Photomasks, Quartz, Dry etching, Critical dimension metrology, Manufacturing, Semiconducting wafers, Resolution enhancement technologies, Phase shifts, Lithography

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Proceedings Article | 12 May 2005 Paper

Defect printability and inspectability of Cr-less phase-shift masks for the 70nm node

J. Heumann, J. Schramm, A. Birnstein, K. Park, T. Witte, N. Morgana, M. Hennig, R. Pforr, J. Thiele, N. Schmidt, C. Aquino

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.601568

KEYWORDS: Photomasks, Quartz, Semiconducting wafers, Inspection, Bridges, Defect inspection, Resolution enhancement technologies, Scanning electron microscopy, Critical dimension metrology, Manufacturing

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Proceedings Article | 12 May 2005 Paper

Polarized light for resolution enhancement at 70 nm and beyond

Rainer Pforr, Mario Hennig, Max Hoepfl, Tomoyuki Matsuyama, Winfried Meier, Hisashi Nishinaga

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.619863

KEYWORDS: Polarization, Digital signal processing, Critical dimension metrology, Imaging systems, Photomasks, Resolution enhancement technologies, Semiconducting wafers, Scanning electron microscopy, Line edge roughness, Metals

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Proceedings Article | 2 June 2004 Paper

Contact layer printing using alternating phase-shifting masks: mask making, patterning results, and production implementation

Rainer Pforr, Wolfgang Dettmann, M. Eisenhut, Mario Hennig, Detlef Hofmann, Joerg Thiele, Guido Thielscher

Proceedings Volume 5504, (2004) https://doi.org/10.1117/12.568032

KEYWORDS: Manufacturing, Overlay metrology, Photomasks, Etching, Phase shifts, Scanners, Critical dimension metrology, Quartz, Mask making, Optical lithography

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Proceedings Article | 28 May 2004 Paper

Hard phase-shifting masks for the 65-nm node: a performance comparison

Rainer Pforr, Mario Hennig, Roderick Koehle, Nicolo Morgana, Joerg Thiele, Jens Weckesser

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.534091

KEYWORDS: Photomasks, Critical dimension metrology, Phase shifts, Printing, Etching, Lithography, Optical lithography, Chromium, Resolution enhancement technologies, Scanning electron microscopy

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Proceedings Article | 26 June 2003 Paper

Full-level alternating PSM for sub-100nm DRAM gate patterning

Rainer Pforr, Marco Ahrens, Wolfgang Dettmann, Mario Hennig, Roderick Koehle, Burkhard Ludwig, Nicolo Morgana, Joerg Thiele

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485521

KEYWORDS: Critical dimension metrology, Photomasks, Optical lithography, Lithography, Optical proximity correction, Mask making, Phase shifts, Semiconducting wafers, Etching, Resolution enhancement technologies

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Proceedings Article | 30 July 2002 Paper

Introduction of full-level alternating phase-shift mask technology into IC manufacturing

Joerg Thiele, Marco Ahrens, Wolfgang Dettmann, M. Heissmeier, Mario Hennig, Burkhard Ludwig, Molela Moukara, Rainer Pforr

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474639

KEYWORDS: Photomasks, Optical proximity correction, Semiconducting wafers, Calibration, Critical dimension metrology, Lithography, Phase shifts, Data modeling, Manufacturing, Optical calibration

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Proceedings Article | 14 September 2001 Paper

Alternating phase-shifting mask application: effect of width and geometry of shifters, 3D EMF simulation and experimental verification

Armin Semmler, Annika Elsner, Roderick Koehle, Leonhard Mader, Rainer Pforr, Christoph Noelscher, Christoph Friedrich, Juergen Knobloch, Uwe Griesinger

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435773

KEYWORDS: Photomasks, Phase shifts, Lithography, Phase shifting, Optical lithography, Optical proximity correction, 3D metrology, Resolution enhancement technologies, 3D image processing, Diffraction

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Proceedings Article | 22 January 2001 Paper

Balancing of alternating phase-shifting masks for practical application: modeling and experimental verification

Uwe Griesinger, Leonhard Mader, Armin Semmler, Wolfgang Dettmann, Christoph Noelscher, Rainer Pforr

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410714

KEYWORDS: Etching, Phase measurement, Photomasks, Phase shifts, Chromium, Calibration, 3D metrology, Quartz, Profiling, Error analysis

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Proceedings Article | 5 July 2000 Paper

Optimizing edge topography of alternating phase-shift masks using rigorous mask modeling

Christoph Friedrich, Leonhard Mader, Andreas Erdmann, Steffen List, Ronald Gordon, Christian Kalus, Uwe Griesinger, Rainer Pforr, Josef Mathuni, Guenther Ruhl, Wilhelm Maurer

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.388969

KEYWORDS: Photomasks, Quartz, Etching, Chromium, Phase shifts, Critical dimension metrology, Picosecond phenomena, Finite-difference time-domain method, Semiconducting wafers, Lithography

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Proceedings Article | 5 July 2000 Paper

Simulation-based method for sidelobe supression

Christoph Dolainsky, Paul Karakatsanis, Fritz Gans, Rainer Pforr, Joerg Thiele

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.388952

KEYWORDS: Photomasks, Lithography, Computer simulations, Printing, Phase shifts, Image transmission, Transmittance, Optical proximity correction, Scanning electron microscopy, Manufacturing

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Proceedings Article | 3 February 2000 Paper

Defect printability and repair of alternating phase-shift masks

Christoph Friedrich, Martin Verbeek, Leonhard Mader, Christian Crell, Rainer Pforr, Uwe Griesinger

Proceedings Volume 3996, (2000) https://doi.org/10.1117/12.377104

KEYWORDS: Photomasks, Quartz, Inspection, Etching, Semiconducting wafers, Chromium, Phase shifts, Phase shifting, Ions, Printing

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Proceedings Article | 30 December 1999 Paper

Transmission and phase balancing of alternating phase-shifting masks (5x): theoretical and experimental results

Uwe Griesinger, Rainer Pforr, Juergen Knobloch, Christoph Friedrich

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373332

KEYWORDS: Etching, Photomasks, Phase shifts, Phase shifting, Picosecond phenomena, Printing, Quartz, Phase measurement, Anisotropic etching, Resolution enhancement technologies

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Proceedings Article | 30 December 1999 Paper

Absorbing assist pattern technique (A2PT) for effective sidelobe control for attenuated phase-shifting masks in optical projection lithography

Rainer Pforr, Fritz Gans, Juergen Knobloch, Joerg Thiele

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373289

KEYWORDS: Photomasks, Chromium, Printing, Phase shifts, Transmittance, Mask making, Projection lithography, Deep ultraviolet, Image transmission, Double patterning technology

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Proceedings Article | 26 July 1999 Paper

Evaluating the potential of alternating phase-shift masks using lithography simulation

Christoph Friedrich, Klaus Ergenzinger, Fritz Gans, Andreas Grassmann, Uwe Griesinger, Juergen Knobloch, Leonhard Mader, Wilhelm Maurer, Rainer Pforr

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354371

KEYWORDS: Photomasks, Lithography, Solids, Phase shifts, Semiconducting wafers, Quartz, Etching, Scanning electron microscopy, Chromium, Deep ultraviolet

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Proceedings Article | 29 June 1998 Paper

Benchmarking of software tools for optical proximity correction

Angelika Jungmann, Joerg Thiele, Christoph Friedrich, Rainer Pforr, Wilhelm Maurer

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310721

KEYWORDS: Optical proximity correction, Photomasks, Data modeling, Logic, Semiconducting wafers, Mask making, Inspection, Data processing, Etching, Resistance

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Proceedings Article | 12 February 1997 Paper

Printability and repair techniques for DUV photomasks

Fritz Gans, Marion Jess, Stephanie Kohlpoth, Rainer Pforr

Proceedings Volume 3236, (1997) https://doi.org/10.1117/12.301183

KEYWORDS: Photomasks, Critical dimension metrology, Deep ultraviolet, Etching, Ion beams, Printing, Semiconducting wafers, Metals, Quartz, Ions

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Proceedings Article | 12 February 1997 Paper

Comparison of line shortening assessed by aerial image and wafer measurements

Wolfram Ziegler, Rainer Pforr, Joerg Thiele, Wilhelm Maurer

Proceedings Volume 3236, (1997) https://doi.org/10.1117/12.301203

KEYWORDS: Photomasks, Head, Semiconducting wafers, Atomic force microscopy, Reticles, Deep ultraviolet, OLE for process control, Data corrections, Critical dimension metrology, Lithography

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Proceedings Article | 7 June 1996 Paper

Imaging parameter optimization for advanced lithography based on STELLA

Rainer Pforr, Leonhard Mader

Proceedings Volume 2726, (1996) https://doi.org/10.1117/12.240921

KEYWORDS: Critical dimension metrology, Photomasks, Lithography, Lithographic illumination, Phase shifts, Semiconducting wafers, Deep ultraviolet, Binary data, Printing, Photoresist processing

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Proceedings Article | 26 May 1995 Paper

Feature biasing versus feature-assisted lithography: a comparison of proximity correction methods for 0.5*(lambda/NA) lithography

Rainer Pforr, Kurt Ronse, Luc Van den Hove, Anthony Yen, Shane Palmer, Gene Fuller, Oberdan Otto

Proceedings Volume 2440, (1995) https://doi.org/10.1117/12.209249

KEYWORDS: Optical proximity correction, Photomasks, Lithography, Critical dimension metrology, Electroluminescence, Phase shifts, Binary data, Cadmium, Lithographic illumination, Transparency

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Proceedings Article | 17 May 1994 Paper

Improvement of the focus exposure latitude using optimized illumination and mask design

Rainer Pforr, Kurt Ronse, Patrick Jaenen, Rik Jonckheere, Luc Van den Hove, Peter van Oorschot, Paul Luehrmann

Proceedings Volume 2197, (1994) https://doi.org/10.1117/12.175467

KEYWORDS: Photomasks, Aluminum, Phase shifts, Halftones, Lithographic illumination, Lithography, Electroluminescence, Logic, Semiconducting wafers, Chromium

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Proceedings Article | 17 May 1994 Paper

Optimization of the optical phase shift in attenuated phase-shifting masks and application to quarter-micrometer deep-UV lithography for logics

Kurt Ronse, Rainer Pforr, Ki-Ho Baik, Rik Jonckheere, Luc Van den Hove

Proceedings Volume 2197, (1994) https://doi.org/10.1117/12.175476

KEYWORDS: Phase shifts, Photomasks, Lithography, Manufacturing, Transmittance, Deep ultraviolet, Phase measurement, Tolerancing, Optics manufacturing, Refractive index

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Proceedings Article | 8 August 1993 Paper

New resolution-enhancing mask for projection lithography based on in-situ off-axis illumination

Rainer Pforr, Rik Jonckheere, Wolfgang Henke, Kurt Ronse, Patrick Jaenen, Ki-Ho Baik, Luc Van den Hove

Proceedings Volume 1927, (1993) https://doi.org/10.1117/12.150424

KEYWORDS: Photomasks, Diffraction gratings, Optical lithography, Light sources, Diffraction, Glasses, Semiconducting wafers, Computer generated holography, Lithographic illumination, Phase shifts

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Proceedings Article | 1 June 1992 Paper

In-process image detection technique for determination of overlay and image quality for ASM-L wafer stepper

Rainer Pforr, Stefan Wittekoek, Roland Van Den Bosch, Luc Van den Hove, Rik Jonckheere, Theo Fahner, Rolf Seltmann

Proceedings Volume 1674, (1992) https://doi.org/10.1117/12.130355

KEYWORDS: Optical alignment, Semiconducting wafers, Diffraction gratings, Image quality, Information operations, Diffraction, Refractive index, Oxides, Overlay metrology, Silicon

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Showing 5 of 31 publications

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