Mr. Rainer M. Schmid Profile

Rainer M. Schmid

Product Manager E-Beam Products at Carl Zeiss SMT Inc

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Publications (7)

Proceedings Article | 21 June 2006 Paper

Printability study with polarization based AIMS fab 193i to investigate mask polarization effects

Axel Zibold, Ulrich Stroessner, Eric Poortinga, Rainer Schmid, Thomas Scherübl, Norbert Rosenkranz, Wolfgang Harnisch

Proceedings Volume 6281, 628108 (2006) https://doi.org/10.1117/12.692728

KEYWORDS: Polarization, Photomasks, Scanners, Reticles, Semiconducting wafers, Transmittance, Phase shifts, Printing, Immersion lithography, Semiconductors

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Proceedings Article | 28 June 2005 Paper

Advances with the new AIMS fab 193 2nd generation: a system for the 65 nm node including immersion

Axel Zibold, E. Poortinga, H. v. Doornmalen, R. Schmid, T. Scherubl, W. Harnisch

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617508

KEYWORDS: Photomasks, Scanners, Semiconducting wafers, Polarization, Liquids, Reticles, Critical dimension metrology, Binary data, Imaging systems, Refractive index

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Proceedings Article | 16 June 2005 Paper

Application results at 193nm: lithography emulation by aerial imaging and supplementary high resolution measurements

Axel Zibold, Rainer Schmid, Klaus Bohm, Robert Brunner, Arndt Durr

Proceedings Volume 5835, (2005) https://doi.org/10.1117/12.637309

KEYWORDS: Photomasks, Image resolution, Semiconducting wafers, Lithography, Reticles, Binary data, Optical proximity correction, 193nm lithography, Airborne remote sensing, Scanners

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Proceedings Article | 10 May 2005 Paper

Advances in hardware, software, and automation for 193nm aerial image measurement systems

Axel Zibold, R. Schmid, A. Seyfarth, M. Waechter, W. Harnisch, H. Doornmalen

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.599715

KEYWORDS: Photomasks, Semiconducting wafers, Imaging systems, Reticles, Critical dimension metrology, Optical proximity correction, Lithographic illumination, Scanners, Lithography, 193nm lithography

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A new, second generation AIMS fab 193 system has been developed which is capable of emulating lithographic imaging of any type of reticles such as binary and phase shift masks (PSM) including resolution enhancement technologies (RET) such as optical proximity correction (OPC) or scatter bars. The system emulates the imaging process by adjustment of the lithography equivalent illumination and imaging conditions of 193nm wafer steppers including circular, annular, dipole and quadrupole type illumination modes. The AIMS fab 193 allows a rapid prediction of wafer printability of critical mask features, including dense patterns and contacts, defects or repairs by acquiring through-focus image stacks by means of a CCD camera followed by quantitative image analysis. Moreover the technology can be readily applied to directly determine the process window of a given mask under stepper imaging conditions. Since data acquisition is performed electronically, AIMS in many applications replaces the need for costly and time consuming wafer prints using a wafer stepper/ scanner followed by CD SEM resist or wafer analysis. The AIMS fab 193 second generation system is designed for 193nm lithography mask printing predictability down to the 65nm node. In addition to hardware improvements a new modular AIMS software is introduced allowing for a fully automated operation mode. Multiple pre-defined points can be visited and through-focus AIMS measurements can be executed automatically in a recipe based mode. To increase the effectiveness of the automated operation mode, the throughput of the system to locate the area of interest, and to acquire the through-focus images is increased by almost a factor of two in comparison with the first generation AIMS systems. In addition a new software plug-in concept is realised for the tools. One new feature has been successfully introduced as "Global CD Map", enabling automated investigation of global mask quality based on the local determination of wafer level CD at multiple pre-defined measurement points on the mask. This feature supports both reticle manufacturing in mask shops and lithographic process analysis in the Wafer Fab environment. Based on the newly developed software the AIMS can speed up mask development in both the design process and OPC verification.

Proceedings Article | 6 December 2004 Paper

Aerial image measuring system at 193 nm: a tool-to-tool comparison and global CD mapping

Axel Zibold, Rainer Schmid, Klaus Boehm, Robert Birkner

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569283

KEYWORDS: Photomasks, Critical dimension metrology, Reticles, Semiconducting wafers, Scanners, Lithography, Inspection, Optical proximity correction, Image processing, Scanning electron microscopy

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Proceedings Article | 6 December 2004 Paper

Evaluation of printability of crystal growth defects in a 193-nm lithography environment using AIMS

Rainer Schmid, Axel Zibold, Kaustuve Bhattacharyya, Xuemei Chen, Brian Grenon

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569375

KEYWORDS: Lithography, Crystals, Reticles, Inspection, Photomasks, Printing, Semiconducting wafers, Scanners, Lithographic illumination, Raman spectroscopy

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Proceedings Article | 20 August 2004 Paper

Aerial image measurement technique for automated reticle defect disposition (ARDD) in wafer fabs

Axel Zibold, Rainer Schmid, B. Stegemann, Thomas Scheruebl, Wolfgang Harnisch, Yuji Kobiyama

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557811

KEYWORDS: Photomasks, Semiconducting wafers, Pellicles, Reticles, Inspection, Lithography, Scanners, Particles, Crystals, Polarization

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Showing 5 of 7 publications

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