Mr. Ravi Ranjan Profile

Ravi Ranjan

at Darbhanga College of Engineering

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Author

Publications (5)

Proceedings Article | 13 April 2020 Presentation + Paper

Investigation of GeSn/SiGeSn nanostructured layer for sensors in mid-infrared application

Ravi Ranjan, Prakash Pareek, Saurabh K. Pandey, Sanjay Kumar, Jitendra K. Mishra

Proceedings Volume 11345, 113452K (2020) https://doi.org/10.1117/12.2555931

KEYWORDS: Germanium, Tin, Mid-IR, Sensors, Nanostructuring, Silicon, Communication engineering, Interfaces, CMOS sensors, Electronics

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Proceedings Article | 1 April 2020 Presentation + Paper

Performance comparison of tin-based group IV SQWIP and MQWIP in dark conditions

Prakash Pareek, Ravi Ranjan, Saurabh Kumar Pandey, Jitendra Kumar Mishra, Ajay Kumar Kushwaha

Proceedings Volume 11345, 113452A (2020) https://doi.org/10.1117/12.2555449

KEYWORDS: Quantum wells, Quantum well infrared photodetectors, Tin, Germanium, Photodetectors, Sensors, Silicon, Absorption, Signal detection, Electronic circuits

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Proceedings Article | 23 February 2018 Paper

Performance analysis of GeSn-alloy-based multiple quantum well transistor laser

Ravi Ranjan, Prakash Pareek, Syed Sadique Anwer Askari, Mukul Das

Proceedings Volume 10526, 105262A (2018) https://doi.org/10.1117/12.2290570

KEYWORDS: Quantum wells, Transistors, Tin, Germanium, Silicon, Diffusion, Electrons, Communication engineering, Electronics engineering, Photonics

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Proceedings Article | 22 February 2017 Paper

Analysis of carrier dynamic effects on frequency response of tin incorporated group-IV alloy-based transistor laser

Ravi Ranjan, Prakash Pareek, Mukul Das

Proceedings Volume 10098, 100980T (2017) https://doi.org/10.1117/12.2252655

KEYWORDS: Transistors, Quantum efficiency, Modulation, Mid-IR, Quantum wells, Germanium, Tin, Silicon, Optoelectronic devices, Heterojunctions, Picosecond phenomena, Diffusion, Analytical research

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Proceedings Article | 22 February 2017 Paper

Modeling of frequency response in strain balanced SiGeSn/GeSn quantum well infrared photodetector

Prakash Pareek, Ravi Ranjan, Mukul Das

Proceedings Volume 10098, 100981P (2017) https://doi.org/10.1117/12.2251300

KEYWORDS: Quantum well infrared photodetectors, Quantum wells, Germanium, Thermal modeling, Silicon, Electrons, Tin, Absorption, Sensors, Infrared detectors

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