Dr. Ravinder Kumar Profile

Dr. Ravinder Kumar

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Publications (15)

Proceedings Article | 21 August 2020 Poster + Paper

A novel heterostructure with multilayer Stranski-Krastanov QDs heterogeneously coupled to Submonolayer QDs for enhanced optical and material characteristics

Raveesh Gourishetty, Debiprasad Panda, Ravinder Kumar, Sanowar Alam Gazi, Subhananda Chakrabarti

Proceedings Volume 11465, 114651H (2020) https://doi.org/10.1117/12.2569022

KEYWORDS: Heterojunctions, Luminescence, Quantum dots, Gallium arsenide

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Proceedings Article | 21 August 2020 Poster + Paper

Effect of vertical induced strain on growth kinetics of self-assembled epitaxially grown InAs surface quantum dots

Manas Mantri, Debiprasad Panda, Debabrata Das, Ravinder Kumar, Sanowar Alam Gazi, Subhananda Chakrabarti

Proceedings Volume 11465, 114651C (2020) https://doi.org/10.1117/12.2568847

KEYWORDS: Indium arsenide, Quantum dots, Gallium arsenide, Atomic force microscopy, Heterojunctions, Luminescence, Sensors

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Proceedings Article | 21 August 2020 Poster + Paper

Bilayer self-assembled InAs QD using digital alloy capping layer approach: experiment and theory

Ravindra Kumar, Jhuma Saha, Debiprasad Panda, Ravinder Kumar, Sanowar Alam Gazi, Raveesh Gourishetty, Subhananda Chakrabarti

Proceedings Volume 11465, 114651A (2020) https://doi.org/10.1117/12.2568820

KEYWORDS: Indium arsenide, Gallium arsenide, Interfaces, Quantum dots, Indium gallium arsenide, Heterojunctions, Luminescence

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Proceedings Article | 1 April 2020 Presentation + Paper

Investigation of InAs quantum dots grown on the Ge substrate without migration enhance epitaxy layer

Ravinder Kumar , Debiprasad Panda, Jhuma Saha, Suryansh Dongre, Sanowar Alam Gazi, Subhananda Chakrabarti

Proceedings Volume 11345, 113452V (2020) https://doi.org/10.1117/12.2554181

KEYWORDS: Gallium arsenide, Germanium, Indium arsenide, Quantum dots, Silicon, Epitaxy

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Proceedings Article | 2 March 2020 Paper

Enhanced optical performance through growth strategy in coupled InAs P-i-P QDIPs

Suryansh Dongre, Debiprasad Panda, Sanowar Alam Gazi, Debabrata Das, Ravinder Kumar, Nivedita Pandey, Abhishek Kumar, Subhananda Chakrabarti

Proceedings Volume 11291, 112910O (2020) https://doi.org/10.1117/12.2542403

KEYWORDS: Heterojunctions, Indium arsenide, Gallium arsenide, Luminescence, Indium gallium arsenide, Quantum dots, Phonons

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Proceedings Article | 2 March 2020 Paper

Optical and structural behaviour of InAs quantum dots grown on the Si substrate without Si-Ge graded layer and without migration enhanced epitaxy layer

Ravinder Kumar, Debiprasad Panda, Jhuma Saha, Suryansh Dongre, Sanowar Alam Gazi, Subhananda Chakrabarti

Proceedings Volume 11291, 112910Z (2020) https://doi.org/10.1117/12.2546384

KEYWORDS: Silicon, Gallium arsenide, Quantum dots, Indium arsenide, Epitaxy, Germanium

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Proceedings Article | 2 March 2020 Paper

Submonolayer quantum dots in P-i-P configuration: study on effects of monolayer coverage and stacking variations

Suryansh Dongre, Debiprasad Panda, Sanowar Alam Gazi, Debabrata Das, Ravinder Kumar, Nivedita Pandey, Abhishek Kumar, Subhananda Chakrabarti

Proceedings Volume 11291, 112910Q (2020) https://doi.org/10.1117/12.2542569

KEYWORDS: Heterojunctions, Quantum dots, Indium arsenide, Luminescence, Gallium arsenide, Gallium, Beryllium

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Proceedings Article | 2 March 2020 Paper

Optimization of strain-coupled InAs QD layers in P-i-P infrared photodetector heterostructures

Suryansh Dongre, Debiprasad Panda, Sanowar Alam Gazi, Debabrata Das, Ravinder Kumar, Abhishek Kumar, Nivedita Pandey, Subhananda Chakrabarti

Proceedings Volume 11291, 112910P (2020) https://doi.org/10.1117/12.2542565

KEYWORDS: Heterojunctions, Indium arsenide, Photodetectors, Luminescence, Infrared radiation, Gallium, Gallium arsenide, Quantum dots

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Proceedings Article | 9 September 2019 Paper

Influence of quaternary (In0.21Al0.21Ga0.58As) capping on the performance of InAs quantum dot infrared photodetector

Ravinder Kumar, Debiprasad Panda, Debabrata Das, Jhuma Saha, Binita Tongbram, Subhananda Chakrabarti

Proceedings Volume 11085, 110851K (2019) https://doi.org/10.1117/12.2529887

KEYWORDS: Quantum dots, Gallium arsenide, Indium arsenide, Photodetectors, Infrared radiation, Heterojunctions, Aluminum, Gallium

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Proceedings Article | 28 May 2019 Presentation + Paper

MBE-grown InGaAs/GaAs quantum-dots on Ge substrate: An idea towards optoelectronic integration on silicon

Raman Kumar, Ravinder Kumar, Debiprasad Panda, Jhuma Saha, Binita Tongbram, Debabrata Das, Sourabh Upadhyay, Arka Chatterjee, Samir Kumar Pal, Subhananda Chakrabarti

Proceedings Volume 10929, 109290C (2019) https://doi.org/10.1117/12.2508464

KEYWORDS: Heterojunctions, Germanium, Gallium arsenide, Quantum dots, Silicon, Optical properties, Optoelectronics integration, Luminescence, Optoelectronic devices

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Proceedings Article | 4 March 2019 Paper

Investigation of carrier-confinement and dark current minimization in In0.5Ga0.5As QDIP with the incorporation of In0.21Al0.21Ga0.58As/GaAs capping

Ravinder Kumar, Debiprasad Panda, Debabrata Das, Vinayak Chavan, Raman Kumar, Subhananda Chakrabarti, Sreedhara Sheshadri

Proceedings Volume 10929, 1092910 (2019) https://doi.org/10.1117/12.2508488

KEYWORDS: Aluminum, Gallium, Indium gallium arsenide, Quantum dots, Heterojunctions, Luminescence, Infrared radiation, Gallium arsenide, Photodetectors

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Proceedings Article | 4 March 2019 Presentation + Paper

Effect of vertical coupling on the performance of mid-infrared InAs-QDIP

Ravinder Kumar, Debiprasad Panda, Debabrata Das, Vinayak Chavan, Raman Kumar, Subhananda Chakrabarti, Sreedhara Sheshadri

Proceedings Volume 10929, 109290E (2019) https://doi.org/10.1117/12.2508482

KEYWORDS: Heterojunctions, Gallium arsenide, Quantum dots, Mid-IR, Photodetectors, Raman spectroscopy, Infrared radiation

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Proceedings Article | 4 March 2019 Paper

Analysis of strain relaxation and dark current minimization in In(Ga)As QDIP with In0.15Ga0.85As/GaAs capping

Ravinder Kumar, Debiprasad Panda, Debabrata Das, Vinayak Chavan, Raman Kumar, Subhananda Chakrabarti, Sreedhara Sheshadri

Proceedings Volume 10929, 109290Z (2019) https://doi.org/10.1117/12.2508467

KEYWORDS: Indium gallium arsenide, Indium arsenide, Heterojunctions, Quantum dots, Gallium, Luminescence, Gallium arsenide, Mid-IR, Satellites, Infrared photography

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Proceedings Article | 4 March 2019 Presentation + Paper

MBE-grown GaAs/AlGaAs multiple quantum wells on Ge substrate

Raman Kumar, Ravinder Kumar, Debiprasad Panda, Binita Tongbram, Subhananda Chakrabarti

Proceedings Volume 10929, 1092905 (2019) https://doi.org/10.1117/12.2508508

KEYWORDS: Quantum wells, Germanium, Gallium arsenide, Silicon, Nanostructures, Interfaces, X-ray diffraction, Gallium, Annealing, Heterojunctions

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Proceedings Article | 1 March 2019 Presentation + Paper

Enhanced optical and structural properties of MBE-grown AlGaN nanowires on Si substrate by H-ion implantation and UV ozone treatment

Raman Kumar, Ravinder Kumar, Debiprasad Panda, Mahitosh Biswas, Sourabh Upadhyay, Debabrata Das, Songrui Zhao, Zetian Mi, Subhananda Chakrabarti

Proceedings Volume 10918, 109180A (2019) https://doi.org/10.1117/12.2508490

KEYWORDS: Nanowires, Ultraviolet radiation, Silicon, Ozone, Ion implantation, Scanning electron microscopy, Molecular beam epitaxy

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Showing 5 of 15 publications

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