A visible wavelength interferometer has been developed for the alignment of an extreme ultraviolet lithography (EUVL) camera. Although the EUVL camera will operate at 13.4 nm, the alignment is far more conveniently done at visible wavelengths, at ambient pressure. Traditional visible interferometers are not capable of reaching the better than 1 nm accuracy required for EUVL camera alignment; so a phase shifting diffraction-limited interferometer was constructed and used to align and quantify the EUVL wavefront to an accuracy better than (lambda) visible/2000. The interferometer and alignment process are described, and camera wavefront measurements presented.
The capabilities of the EUV 10x microstepper have been substantially improved over the past year. The key enhancement was the development of a new projection optics system with reduced wavefront error, reduced flare, and increased numerical aperture. These optics and concomitant developments in EUV reticles and photoresists have enabled dramatic improvements in EUV imaging, illustrated by resolution of 70 nm dense lines and spaces (L/S). CD linearity has been demonstrated for dense L/S over the range 100 nm to 80 nm, both for the imaging layer and for subsequent pattern transfer. For a +/- 10 percent CD specification, we have demonstrated a process latitude of +/- micrometers depth of focus and 10 percent dose range for dense 100 nm L/S.
Recent experiments with four 10x EUV imaging systems provide the first direct comparisons of visible-light and at- wavelength EUV interferometers performed using the state-of- the-art measurement tools that will be used to assemble and align the next generation of EUV imaging systems. Measurements from four individual multilayer-coated Schwarzschild objectives are discussed. Favorable agreement has been achieved between EUV and visible-light system wavefront measurements in all four optical systems. Measurements made in the presence of surface contamination and multilayer thickness variation, however, do show expected localized differences between the two measurements.
Alignment sensors based on silicon position sensitive detectors intended for use in space-based vibration and pointing control systems are presented. These sensors meet angular accuracy requirements on the order of a microradian. The detectors are sensitive to a wide range of wavelengths and input beam temporal characteristics. The examples presented are responsive to radiation from a 20 kHz modulated 834 nm laser diode and a 25 ns pulsed 532 nmdoubled Nd:YAG laser. Sensors using this unique silicon position sensitive detector have achieved 1 linearity over much of the detector field and require little post-processing. The electronics required to process the detector signals are relatively straightforward although the high accuracy demands that the detector channels have well-matched gains. The overall design of these sensor packages is reviewed and performance data is presented. 1. BACKGROUND A beam control system was required to eliminate vibration and jitter effects in a large optical system designed for flight on the space shuttle. The goal of optical control systems is to maintain beam stability in angle and position. Beam correction over the optical path is performed with several steering mirrors and beam motion is detected in associated sensor systems. The control system requires accurate position and angle information in order to stabilize the beams. This implicitly requires good sensor measurement repeatability over a field of view large enough to accommodate the expected range of variation. To minimize
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