Mr. Rigo Richter Profile

Rigo Richter

at Carl Zeiss SMT GmbH

SPIE Involvement:

Author

Publications (14)

Proceedings Article | 27 May 2010 Paper

Increased productivity of repair verification by offline analysis of aerial images

Ernesto Villa, Luca Sartelli, Hiroyuki Miyashita, Thomas Scheruebl, Rigo Richter, Thomas Thaler

Proceedings Volume 7748, 77481F (2010) https://doi.org/10.1117/12.863806

KEYWORDS: Photomasks, Image analysis, Manufacturing, Error analysis, Reliability, Image processing, Inspection, Semiconducting wafers, Standards development, Lithography

Read Abstract +

Proceedings Article | 23 September 2009 Paper

New analysis tools and processes for mask repair verification and defect disposition based on AIMS images

Rigo Richter, Eric Poortinga, Thomas Scheruebl

Proceedings Volume 7488, 74882V (2009) https://doi.org/10.1117/12.835948

KEYWORDS: Photomasks, Image analysis, Image processing, Semiconducting wafers, Error analysis, Manufacturing, Analytical research, Tolerancing, Critical dimension metrology, Standards development

Read Abstract +

Proceedings Article | 23 September 2009 Paper

AIMS mask qualification for 32nm node

Rigo Richter, Thomas Thaler, Holger Seitz, Ulrich Stroessner, Thomas Scheruebl

Proceedings Volume 7488, 74882R (2009) https://doi.org/10.1117/12.830083

KEYWORDS: Photomasks, Double patterning technology, Scanners, Source mask optimization, Lithography, Computational lithography, Lithographic illumination, Semiconducting wafers, 193nm lithography, Optical aberrations

Read Abstract +

Proceedings Article | 11 May 2009 Paper

The imaging performance of flash memory masks characterized with AIMS

Eelco van Setten, Onno Wismans, Kees Grim, Jo Finders, Mircea Dusa, Robert Birkner, Rigo Richter, Thomas Scherübl

Proceedings Volume 7379, 737912 (2009) https://doi.org/10.1117/12.824279

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Seaborgium, Scanners, Binary data, Lithography, Scanning electron microscopy, Cadmium, Error analysis

Read Abstract +

Proceedings Article | 11 May 2009 Paper

Semi-automated repair verification of aerial images

Eric Poortinga, Thomas Schereubl, Rigo Richter

Proceedings Volume 7379, 73792D (2009) https://doi.org/10.1117/12.824327

KEYWORDS: Photomasks, Image analysis, Metrology, Semiconducting wafers, Manufacturing, Error analysis, Analytical research, Critical dimension metrology, Standards development, Lithography

Read Abstract +

Proceedings Article | 17 October 2008 Paper

AIMS and resist simulation

Ulrich Strößner, Holger Seitz, Robert Birkner, Rigo Richter, Thomas Scherübl

Proceedings Volume 7122, 71221D (2008) https://doi.org/10.1117/12.801226

KEYWORDS: Semiconducting wafers, Photomasks, Calibration, Image processing, Scanners, Printing, Photoresist processing, Lithography, Data modeling, Physics

Read Abstract +

Proceedings Article | 19 May 2008 Paper

Wafer level CD metrology on photomasks using aerial imaging technology

Thomas Scherübl, Ulrich Strößner, Holger Seitz, Robert Birkner, Rigo Richter

Proceedings Volume 7028, 70282W (2008) https://doi.org/10.1117/12.793102

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Airborne remote sensing, Scanning electron microscopy, Line width roughness, Line edge roughness, Scanners, Optical proximity correction, Lithography

Read Abstract +

Proceedings Article | 2 May 2008 Paper

Characterizing the imaging performance of flash memory masks using AIMS

Eelco van Setten, Onno Wismans, Kees Grim, Jo Finders, Mircea Dusa, Robert Birkner, Rigo Richter, Thomas Scherübl

Proceedings Volume 6792, 67920K (2008) https://doi.org/10.1117/12.798603

KEYWORDS: Photomasks, Seaborgium, Binary data, Semiconducting wafers, Electroluminescence, Scanners, Scanning electron microscopy, Lithography, Critical dimension metrology, Optical proximity correction

Read Abstract +

Proceedings Article | 11 April 2008 Paper

The flash memory battle: How low can we go?

Eelco van Setten, Onno Wismans, Kees Grim, Jo Finders, Mircea Dusa, Robert Birkner, Rigo Richter, Thomas Scherübl

Proceedings Volume 6924, 69244I (2008) https://doi.org/10.1117/12.773266

KEYWORDS: Photomasks, Binary data, Seaborgium, Semiconducting wafers, Critical dimension metrology, Scanners, Atrial fibrillation, Scanning electron microscopy, Electroluminescence, Reticles

Read Abstract +

Proceedings Article | 30 October 2007 Paper

Using the AIMS 45-193i for hyper-NA imaging applications

Peter De Bisschop, Vicky Philipsen, Robert Birkner, Ute Buttgereit, Rigo Richter, Thomas Scherübl

Proceedings Volume 6730, 67301G (2007) https://doi.org/10.1117/12.746688

KEYWORDS: Scanners, Semiconducting wafers, Photomasks, Lithography, Inspection, Electroluminescence, Polarization, Binary data, Computer simulations, Reticles

Read Abstract +

Proceedings Article | 30 October 2007 Paper

Impact of alternative mask stacks on the imaging performance at NA 1.20 and above

Vicky Philipsen, Kei Mesuda, Peter De Bisschop, Andreas Erdmann, Giuseppe Citarella, Peter Evanschitzky, Robert Birkner, Rigo Richter, Thomas Scherübl

Proceedings Volume 6730, 67301N (2007) https://doi.org/10.1117/12.746678

KEYWORDS: Photomasks, Chromium, Electroluminescence, Semiconducting wafers, Nanoimprint lithography, Tantalum, Lithography, Scanners, Scanning electron microscopy, Resolution enhancement technologies

Read Abstract +

Proceedings Article | 3 May 2007 Paper

Programmed defects study on masks for 45nm immersion lithography using the novel AIMS 45-193i

Thomas Scherübl, Arndt Dürr, Klaus Böhm, Robert Birkner, Rigo Richter, Ulrich Strößner

Proceedings Volume 6533, 653309 (2007) https://doi.org/10.1117/12.736530

KEYWORDS: Photomasks, Scanners, Immersion lithography, Lithographic illumination, Opacity, Defect detection, Lithography, CCD cameras, Semiconducting wafers, Manufacturing

Read Abstract +

Proceedings Article | 27 March 2007 Paper

Pupil plane analysis on AIMS 45-193i for advanced photomasks

Yasutaka Morikawa, Takanori Sutou, Kei Mesuda, Takaharu Nagai, Yuichi Inazuki, Takashi Adachi, Nobuhito Toyama, Hiroshi Mohri, Naoya Hayashi, Ulrich Stroessner, Robert Birkner, Rigo Richter, Thomas Scheruebl

Proceedings Volume 6520, 65201H (2007) https://doi.org/10.1117/12.711664

KEYWORDS: Photomasks, Pellicles, Diffraction, Semiconducting wafers, Printing, Wafer-level optics, 3D metrology, Polarization, Data modeling, Binary data

Read Abstract +

Hyper-NA lithography with polarized light illumination is introduced as the solution of 45nm or 32nm node technology. In that case, consideration of new characteristics of mask materials and pellicle films has been required. In order to analyze the influence of mask material's optical characteristics, we have proposed to use the AIMS^TM system measuring diffraction intensity balance in previous work. That was enabled by acquiring pupil plane images using the Bertrand lens in the AIMS^TM system to measure selected area's diffracted light. In this study of mask material evaluation, we used same functionality of AIMS^TM system, MonoPole illumination and Bertrand lens, as previous work but other direction's pole is also used on the illumination aperture to cover total diffraction orders of Cross-quad illumination because this illumination is more flexible for x and y patterns. In order to get diffracted light of 45nm half-pitch, hyper-NA e.g. NA=1.35 was applied and the AIMS^TM 45-193i Alpha system was used for this evaluation. The examinations were performed with binary and half tone PSM with half pitch 40 to 150nm on a 1x scale and fixed half pitch 45nm with various mask bias. We confirmed the relation between diffractions' intensity balance and wafer printing performance for each material and we compared them to 3D simulation results. Moreover, by using the same functionality of AIMS^TM system, the transmission change by pellicle film was also examined. We have prepared two different thickness pellicles to compare transmission change and printed CD on the wafer. Intensity profile at pupil plane on the clear region of the mask was acquired with Bertrand lens and conventional large sigma setting for both with and without pellicle film on the mask. By comparing transmission distribution change between with and without pellicle, we could calculate transmission loss by pellicle at large incident angles. For this experiment, NA=1.40 was applied and the AIMS^TM 45-193i Alpha system was also used. The examinations were performed with half tone PSM at half pitch 45nm and 65nm on a 1x scale on linear polarized DiPole illumination. As a result, we have confirmed good agreement between AIMS^TM measurement data and optical 3D simulations. In conclusion, the AIMS^TMsystem is a valuable tool for analyzing diffraction efficiency or intensity distribution on the pupil plane and comparison to wafer printing performance.

Proceedings Article | 20 May 2006 Paper

First results for hyper NA scanner emulation from AIMS 45-193i

Axel Zibold, Ulrich Strössner, Norbert Rosenkranz, Andrew Ridley, Rigo Richter, Wolfgang Harnisch, Alvina Williams

Proceedings Volume 6283, 628312 (2006) https://doi.org/10.1117/12.681863

KEYWORDS: Scanners, Polarization, Photomasks, Semiconducting wafers, Reticles, Binary data, Immersion lithography, Printing, Optical testing, Lithography

Read Abstract +

Showing 5 of 14 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years