Mr. Robert L. Dean Profile

Robert L. Dean

Senior Staff Engineer at Applied Materials Inc

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Author

Publications (21)

Proceedings Article | 20 August 2004 Paper

Comparative study of two negative CAR resists: EN-024M and NEB 31

Ki-Ho Baik, Robert Dean, Homer Lem, Stephen Osborne, Mark Mueller, Damon Cole

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557718

KEYWORDS: Coating, Line edge roughness, Scanning electron microscopy, Etching, Photomicroscopy, Lithography, Photomasks, Critical dimension metrology, Optical proximity correction, Raster graphics

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Proceedings Article | 28 August 2003 Paper

Comparative study between REAP 200 and FEP171 CAR with 50 kV raster e-beam system for sub-100-nm technology

Ki-Ho Baik, Homer Lem, Robert Dean, Stephen Osborne, Mark Mueller, Frank Abboud

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504186

KEYWORDS: Etching, Scanning electron microscopy, Line edge roughness, Photomicroscopy, Raster graphics, Coating, Photomasks, Lithography, Critical dimension metrology, Photoresist processing

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Proceedings Article | 27 December 2002 Paper

Electron-beam proximity effect correction on the MEBES eXara mask pattern generator

Robert Dean, Ki-Ho Baik

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.468274

KEYWORDS: Backscatter, Optical proximity correction, Electron beams, Raster graphics, Cadmium, Photoresist processing, Optical calibration, Embedded systems, Computing systems, Image resolution

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Proceedings Article | 1 August 2002 Paper

Raster scan patterning solution for 100- and 70-nm OPC masks

Frank Abboud, Ki-Ho Baik, Varoujan Chakarian, Damon Cole, Robert Dean, Mark Gesley, Herb Gillman, William Moore, Mark Mueller, Robert Naber, Thomas Newman, Romin Puri, Frederick Raymond, Mario Rougieri

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.476923

KEYWORDS: Photomasks, Raster graphics, Optical proximity correction, Etching, Control systems, Point spread functions, Optical lithography, Electron beam lithography, Lithography, Edge roughness

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Proceedings Article | 1 July 2002 Paper

REAP (raster e-beam advanced process) using 50-kV raster e-beam system for sub-100-nm node mask technology

Ki-Ho Baik, Robert Dean, Mark Mueller, Maiying Lu, Homer Lem, Stephen Osborne, Frank Abboud

Proceedings Volume 4688, (2002) https://doi.org/10.1117/12.472315

KEYWORDS: Etching, Coating, Line edge roughness, Raster graphics, Image processing, Dry etching, Photoresist processing, Lithography, Critical dimension metrology, Photomasks

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Proceedings Article | 11 March 2002 Paper

100-nm OPC mask patterning using raster-scan 50-kV pattern generation technology

Frank Abboud, Ki-Ho Baik, Varoujan Chakarian, Damon Cole, Jay Daniel, Robert Dean, Mark Gesley, Robert Naber, Thomas Newman, Frederick Raymond, David Trost, Mark Wiltse, William DeVore

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.491928

KEYWORDS: Photomasks, Optical proximity correction, Raster graphics, Optical lithography, Electron beam lithography, Edge roughness, Lithography, Model-based design, Point spread functions, Photoresist processing

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Proceedings Article | 5 September 2001 Paper

High-productivity mask writer with broad operating range

Ki-Ho Baik, Varoujan Chakarian, Bob Dean, Maiying Lu, Robert Naber, Thomas Newman, Mark Wiltse, Frank Abboud

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438401

KEYWORDS: Photomasks, Raster graphics, Photoresist processing, Optical proximity correction, Chemically amplified resists, Optical lithography, RGB color model, Lithography, Semiconductors, Critical dimension metrology

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Proceedings Article | 25 June 1999 Paper

Lithographic analysis of multipass gray writing strategy for electron-beam pattern generation

Jan Chabala, Frank Abboud, Robert Dean, Suzanne Weaver, Damon Cole, Charles Sauer, Frederick Raymond, Ulrich Hofmann

Proceedings Volume 3676, (1999) https://doi.org/10.1117/12.351081

KEYWORDS: Printing, Lithography, Photomasks, Monte Carlo methods, Line edge roughness, Computer aided design, Scattering, Dry etching, Etching, Critical dimension metrology

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Proceedings Article | 23 April 1999 Paper

Investigation of lithography performance using multipass gray (MPG) with MEBES 5000

Robert Dean, David Alexander, Jan Chabala, Thomas Coleman, Caryn Hartglass, Maiying Lu, Charles Sauer, Suzanne Weaver

Proceedings Volume 3665, (1999) https://doi.org/10.1117/12.346222

KEYWORDS: Lithography, Edge roughness, Line edge roughness, Photomasks, Etching, Critical dimension metrology, Optical proximity correction, Dry etching, Printing, Metrology

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Proceedings Article | 1 September 1998 Paper

Further advances in electron-beam pattern generation technology for 180-nm masks

Frank Abboud, Charles Sauer, Matthew Vernon, Thomas Coleman, Robert Dean, William Wang, Richard Prior, Maiying Lu, Suzanne Weaver

Proceedings Volume 3412, (1998) https://doi.org/10.1117/12.328815

KEYWORDS: Dry etching, Etching, Photomasks, Critical dimension metrology, Photoresist processing, Lithography, Image processing, Manufacturing, Calibration, Printing

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Proceedings Article | 28 July 1997 Paper

Multipass gray printing for the new MEBES 4500S mask lithography system

Frank Abboud, Robert Dean, Janine Doering, W. Eckes, Mark Gesley, Ulrich Hofmann, Terry Mulera, Robert Naber, M. Pastor, Wayne Phillips, John Raphael, Frederick Raymond, Charles Sauer

Proceedings Volume 3096, (1997) https://doi.org/10.1117/12.277295

KEYWORDS: Printing, Control systems, Photomasks, Lithography, Electron beam lithography, Reticles, Temperature metrology, Laser scattering, Scattering, Modulation

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Proceedings Article | 12 February 1997 Paper

Characterization and modeling of CD performance with thin PBS

Robert Dean, Charles Sauer

Proceedings Volume 3236, (1997) https://doi.org/10.1117/12.301212

KEYWORDS: Critical dimension metrology, 3D modeling, Scattering, Etching, Performance modeling, Electron beam lithography, Standards development, Wet etching, Lithography, Monte Carlo methods

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Proceedings Article | 27 December 1996 Paper

Optimization of lithography and CD control using GHOST proximity correction with a MEBES 4500 system

Robert Dean

Proceedings Volume 2884, (1996) https://doi.org/10.1117/12.262812

KEYWORDS: Etching, Critical dimension metrology, Opacity, Wet etching, Lithography, Control systems, Dry etching, Backscatter, Cadmium, Raster graphics

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Proceedings Article | 27 December 1996 Paper

Improvement of CD uniformity with PBS by optimizing the crossover development step

Robert Dean, Charles Sauer

Proceedings Volume 2884, (1996) https://doi.org/10.1117/12.262834

KEYWORDS: Critical dimension metrology, Standards development, Diffractive optical elements, Data modeling, Thulium

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Proceedings Article | 8 December 1995 Paper

Further work in optimizing PBS: is it capable of meeting specifications for 256 Mbit DRAM reticle manufacturing?

Robert Dean, Charles Sauer

Proceedings Volume 2621, (1995) https://doi.org/10.1117/12.228192

KEYWORDS: Standards development, Polymers, Annealing, Reticles, Manufacturing, Turbulence, Critical dimension metrology, Lithography, Glasses, Photoresist processing

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Proceedings Article | 8 December 1995 Paper

Evaluation of commercial and experimental resist materials for use in MEBES mask making

Charles Sauer, Robert Dean, Etsuya Morita, Zoilo Tan, Bruce Smith, Dale Ewbank, Sid Duttagupta, Anne Rudack

Proceedings Volume 2621, (1995) https://doi.org/10.1117/12.228215

KEYWORDS: Etching, Polonium, Dry etching, Chemically amplified resists, Photoresist processing, Plasma etching, Plasma, Resistance, Niobium, Critical dimension metrology

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Proceedings Article | 7 December 1994 Paper

PBS resist profile studies for submicron mask lithography

Robert Dean, Homer Lem, Charles Sauer, Hong Chang

Proceedings Volume 2322, (1994) https://doi.org/10.1117/12.195807

KEYWORDS: Photoresist processing, Photomask technology, Lithography, Scanning electron microscopy, Photomasks, Optical proximity correction, Submicron lithography, Distortion, Line edge roughness, Cadmium

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Design rules for 250 nm devices and optical proximity correction (OPC) enhancement techniques require improved resolution. Resolution requirements for these applications extend into the 500 nm realm. The most widely used resist for e-beam generated masks is PBS. Difficulties have been reported when using PBS for features smaller than 2.0 micrometers . These have included poor resolution and CD linearity anomalies at <EQ 1.5 micrometers . Methods were investigated to improve the resolution and CD linearity of PBS resist. The investigation included a study of resist profiles. Results show that resist wall angles improve with increases in dose. At a nominal dose of 1.0 (mu) C/cm², angles can range from 40 to 60 degrees, depending on the type of feature. A significant improvement in wall angle is noted at 2.0 (mu) C/cm², and the angles continue to improve with higher doses until they approach 90 degrees at 4.0 (mu) C/cm². The symmetry of resist lines improves when a puddle process is used instead of the standard spin-spray process. Fluid flowing across the resist during spin-spray processing creates asymmetries, especially with submicron features. This flow asymmetry is eliminated with a puddle process. Postdevelop baking is critical for both resolution and CD linearity. Resist baked at the standard 120 degree(s)C shows degradation of wall angles, asymmetry of resist profiles, and loss of unexposed resist at feature edges. Poor CD linearity is caused by postbaking at temperatures that are too high. A postbake of 98 degree(s) to 102 degree(s)C maintains sharp wall angles and prevents line edge roughness. Experiments show good resolution at 0.7 micrometers for all features, including contacts in both tones, with good CD linearity, CD control, and CD uniformity. The changes made in PBS processing described in this paper can result in acceptable processing of features down to 0.5 micrometers for most mask layers, without relying on the use of proximity effect correction.

Proceedings Article | 7 December 1994 Paper

MEBES 4000 optimization and characterization of MEBES 4500

Jim DeWitt, J. Millino, Joe Watson, Robert Dean, Frederick Raymond, D. McClure, Leonard Gasiorek, Frank Abboud, Robert Naber

Proceedings Volume 2322, (1994) https://doi.org/10.1117/12.195805

KEYWORDS: Composites, Photomask technology, Calibration, Photoresist processing, Control systems, Metrology, Process control, Photomasks, Optical lithography, Critical dimension metrology

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Proceedings Article | 3 November 1994 Paper

MEBES(reg.) reticle writers for 350-nm and 250-nm design rules

Frank Abboud, Robert Naber, Robert Dean, Charles Sauer

Proceedings Volume 2254, (1994) https://doi.org/10.1117/12.191961

KEYWORDS: Photomasks, X-ray technology, Reticles, Composites, Raster graphics, X-rays, Photoresist processing, Metrology, Distortion, Line edge roughness

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Proceedings Article | 15 September 1993 Paper

Process optimization of positive novolac resists for electron-beam lithography resist characterization using single or multiple development steps with either a sodium-hydroxide or metal ion-free dev

Robert Dean, Gary Flores

Proceedings Volume 1925, (1993) https://doi.org/10.1117/12.154808

KEYWORDS: Lithography, Photoresist processing, Metals, Sodium, Electron beam lithography, Charged particle optics, Optimization (mathematics), Electron beams, Photomasks, Dry etching

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Proceedings Article | 1 March 1991 Paper

Proximity effect correction on MEBES for 1x mask fabrication: lithography issues and tradeoffs at 0.25 micron

Andrew Muray, Robert Dean

Proceedings Volume 1496, (1991) https://doi.org/10.1117/12.29744

KEYWORDS: Lithography, Mask making, Photoresist processing, Photomasks, Process control, Critical dimension metrology, Metals, Etching, Electron beam lithography, Standards development

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Showing 5 of 21 publications

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