Dr. Robert F. Karlicek Profile

Dr. Robert F. Karlicek

Director at Rensselaer Polytechnic Institute

SPIE Involvement:

Author

Proceedings Article | 17 April 2000 Paper

Photon recycling semiconductor light-emitting diode

Xiaoyun Guo, John Graff, E. Schubert, Robert Karlicek

Proceedings Volume 3938, (2000) https://doi.org/10.1117/12.382814

KEYWORDS: Light emitting diodes, Semiconductors, Light sources, Semiconducting wafers, Light, Blue light emitting diodes, Quantum efficiency, Gallium arsenide, Ultraviolet radiation, Optical semiconductors

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Proceedings Article | 17 April 2000 Paper

InGaAlP and InGaN light-emitting diodes: high-power performance and reliability

Ivan Eliashevich, Jean-Philippe Debray, Chuong Tran, Hari Venugopalan, Robert Karlicek

Proceedings Volume 3938, (2000) https://doi.org/10.1117/12.382815

KEYWORDS: Light emitting diodes, Indium gallium nitride, Reliability, Visible radiation, Aluminium gallium indium phosphide, Metals, Diodes, Resistance, Light sources and illumination, Luminous efficiency

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Proceedings Article | 14 April 1999 Paper

Growth and characterization of high-efficiency InGaN MQW blue and green LEDs from large-scale-production MOCVD reactors

Chuong Tran, Robert Karlicek, Michael Brown, Ivan Eliashevich, Alexander Gurary, Richard Stall

Proceedings Volume 3621, (1999) https://doi.org/10.1117/12.344487

KEYWORDS: Light emitting diodes, Indium, Indium gallium nitride, Gallium nitride, Semiconducting wafers, Metalorganic chemical vapor deposition, Green light emitting diodes, Reflectivity, Manufacturing, Reflectance spectroscopy

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Proceedings Article | 14 April 1999 Paper

Time-resolved photoluminescence measurements of InGaN light-emitting diodes, films, and multiple quantum wells

Milan Pophristic, Frederick Long, Chuong Tran, Ian Ferguson, Robert Karlicek

Proceedings Volume 3621, (1999) https://doi.org/10.1117/12.344489

KEYWORDS: Light emitting diodes, Indium, Luminescence, Indium gallium nitride, Quantum wells, Gallium nitride, Semiconductors, Picosecond phenomena, Silicon, Excitons

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Proceedings Article | 14 April 1999 Paper

InGaN blue light-emitting diodes with optimized n-GaN layer

Ivan Eliashevich, Yuxin Li, Andrei Osinsky, Chuong Tran, Michael Brown, Robert Karlicek

Proceedings Volume 3621, (1999) https://doi.org/10.1117/12.344483

KEYWORDS: Light emitting diodes, Gallium nitride, Resistance, Doping, Indium gallium nitride, Semiconducting wafers, Reliability, Diodes, Blue light emitting diodes, Metals

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Proceedings Article | 8 April 1998 Paper

Breakdown mechanisms in Al(GaN) MSM photodetectors

Ian Ferguson, Matthew Schurman, Robert Karlicek, Zhe Chuan Feng, S. Lianga, Yicheng Lu, Charles Joseph

Proceedings Volume 3287, (1998) https://doi.org/10.1117/12.304503

KEYWORDS: Photodetectors, Sensors, Electrodes, Aluminum, Ultraviolet radiation, Sapphire, Gallium nitride, Metals, Information operations, Ultraviolet detectors

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Proceedings Article | 7 April 1998 Paper

Fabrication and characterization of GaN-based blue light-emitting diodes

Yuxin Li, Michael Brown, Ivan Eliashevich, T. DiCarlo, Chuong Tran, Robert Karlicek, Richard Stall, L. Koszi, Yu Lu, Hongen Shen

Proceedings Volume 3279, (1998) https://doi.org/10.1117/12.304416

KEYWORDS: Light emitting diodes, Gallium nitride, Indium gallium nitride, Temperature metrology, Electroluminescence, Quantum wells, Blue light emitting diodes, Ultraviolet radiation, Excitons, Electrons

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Proceedings Article | 15 April 1997 Paper

Growth of III-nitrides for photodetector applications

Ian Ferguson, Chuong Tran, Robert Karlicek, Zhe Chuan Feng, Richard Stall, Shaohua Liang, W. Cai, Yuxin Li, Y. Liu, Y. Lu

Proceedings Volume 2999, (1997) https://doi.org/10.1117/12.271209

KEYWORDS: Gallium nitride, Photodetectors, Ultraviolet radiation, Magnesium, Sensors, Sapphire, Semiconducting wafers, Ultraviolet detectors, Metalorganic chemical vapor deposition, Doping

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Proceedings Article | 4 April 1997 Paper

Relevance of the GaN yellow luminescence for light-emitting diodes

W. Grieshaber, E. Schubert, Robert Karlicek, Matthew Schurman, Chuong Tran

Proceedings Volume 3002, (1997) https://doi.org/10.1117/12.271049

KEYWORDS: Luminescence, Gallium nitride, Ultraviolet radiation, Light emitting diodes, Semiconductors, Neodymium, Doping, Optoelectronic devices, Semiconductor lasers, Information operations

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Proceedings Article | 4 April 1997 Paper

Epitaxial growth technologies for HB-LED manufacturing

Alan Thompson, Eric Armour, D. Collins, Peter Zawadzki, Robert Karlicek, Richard Stall

Proceedings Volume 3002, (1997) https://doi.org/10.1117/12.271034

KEYWORDS: Manufacturing, Semiconducting wafers, Light emitting diodes, Metalorganic chemical vapor deposition, Calibration, Gallium arsenide, Liquid phase epitaxy, Safety, Reflectivity, Fabrication

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Proceedings Article | 15 January 1996 Paper

High-power, high-efficiency, and highly uniform 1.3-um uncooled InGaAsP/InP strained multiquantum-well lasers

Keisuke Kojima, Marlin Focht, Joseph Freund, J. Geary, Kenneth Glogovsky, Gregory Guth, Robert Karlicek, Lars Luther, George Przybylek, C. Reynolds, D. Romero, L. Smith, Daniel Stampone, J. Stayt, Venkat Swaminathan, Frank Walters, Kevin Campbell, J. Grenko, Jean Flamand, Michael Palin

Proceedings Volume 2610, (1996) https://doi.org/10.1117/12.230070

KEYWORDS: Semiconducting wafers, Laser applications, High power lasers, Laser processing, Fabry–Perot interferometers, Reliability, Laser marking, Temperature metrology, Absorption, Optical coatings

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Showing 5 of 11 publications

Conference Committee Involvement (2)

Light-Emitting Diodes: Research, Manufacturing, and Applications VIII

27 January 2004 | San Jose, CA, United States

Light-Emitting Diodes: Research, Manufacturing, and Applications VII

28 January 2003 | San Jose, CA, United States

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