Polycrystalline PbSe has the potential to be a V-HOT FPA capable of achieving 50 mK NETD sensitivity with pixel pitch less than 25 μm. However, current approaches using CBD have major reproducibility deficiencies. PVD approaches still struggle with sensitivity and carrier sweep-out. SJOS has explored a variety of PbSe approaches and determined the balance between carrier lifetime, mobility, dark current, and spectral QE that must be achieved in order to produce detectors that have low 1/f noise, high responsivity, and can fabricated reliably. SJOS detectors having these features are to be demonstrated in this presentation We will present data on the microstructure, blackbody performance data, and carrier mobility and lifetime for halogen passivated PbSe that can meet these demands.
Proc. SPIE. 10625, Infrared Imaging Systems: Design, Analysis, Modeling, and Testing XXIX
KEYWORDS: Target detection, Infrared search and track, Staring arrays, Long wavelength infrared, Signal to noise ratio, Unmanned aerial vehicles, Point spread functions, Sensors, Black bodies, Infrared radiation
Unmanned aerial vehicles (UAVs) have become more readily available in the past 5 years and are proliferating rapidly. New aviation regulations are accelerating the use of UAVs in many applications. As a result, there are increasing concerns of potential air threats in situational environments including commercial airport security and drug trafficking. In this study, radiometric signatures of commercially available miniature UAVs is determined for long-wave infrared (LWIR) bands in both clear sky and partial cloudy conditions. Results are presented that compare LWIR performance estimates for the detection of commercial UAVs via infrared search and track (IRST) systems with two candidate sensors.
Understanding atomic distributions on the order of nanometers is becoming ever more essential to solid-state
electronic device design. The local composition of any singular constituent can have a great effect on a host of materials
properties. Atom probe tomography is currently the only characterization technique that can provide direct physical
detection of ionic species of atoms. In this work, MOCVD grown GaMnN thin films are characterized utilizing the state
of the art local electrode atom probe (LEAPTM) to determine the atomic ordering of Mn in an effort to help understand
room-temperature ferromagnetic exchange mechanisms in wide-bandgap dilute magnetic semiconductors. The results
support prior magnetometry data that suggest paramagnetism results primarily from isolated Mn atoms. A predisposition
for the formation of dimers, trimers or clusters does not exist in the samples grown. The ultimate goal in determining the
physical arrangements of atoms and how they related to exchange mechanisms is to understand the structure-propertygrowth
condition relationships for the tailoring of specific MOCVD processes that will lead to the ability to selectively
control spintronic device functionalities.
One key challenge with the the use of III-nitride materials in solid state lighting devices is the use
on thermally and/or electrically insulating substrates. In order to transition the lift-off tehniques from laserbased
processing to more benign chemical techniques, it is essential to realize the integration of chemical
soluble layers into the LED-growth process. This work presents the comparison of physical and chemical
vapor deposition techniques used in the growth of ZnO, one such possible isostructural buffer layer and a
comparison of the materials properties of samples grown by low temperature chemical vapor deposition
and pulsed laser deposition. The quality of the films was highly dependent on the growth conditions and
substrate preparation. For room temperature depostion, amorphous ZnO films were observed, while
completely oriented films were observed for 750°C growth. Pulsed chemical vapor deposition of the films
at 175°C showed smoother polycrystalline films with c-axis texture. ZnO films were etched at room
temperature demonstrating the suitability for chemical liftoff.