A large area infrared focal plane array was designed for use in a variety of military, dual- mode and commercial applications requiring high sensitivity and resolution. A high performance CMOS switched FET readout multiplexer was developed using standard foundry compatible processing. The array can be operated at frame rates up to 240 Hz in either snapshot or rolling readout mode. Independent variable integration control is included for either mode. Array size is logic selectable to either video format compatible 320 X 240, standard 256 X 256, or the entire 320 X 256. Data is read out sequentially through logic selectable 1, 2 or 4 outputs. A line array mode is included, any line selectable, with variable integration time up to 85% of line time. Each 31 micrometers X 31 micrometers cell has > 2.0 E7 electron integration well, coupled to the output via a charge drain sample and hold to maximize performance and to provide a continuous data stream. On chip bias generation, timing generation and level shifters minimize drive requirements. The silicon multiplexer was hybridized to a InSb detector array for a MWIR imaging demonstration.
This paper details a high performance MWIR scanning array with 30 time delay and integration stages (TDI), forward and reverse scan operation, less than 80 noise electrons per stage, and on focal plane blooming control and dynamic range compression. The 92 column by 30 TDI device is fabricated using hybrid technology with the detector fabricated in InSb and indium bumped to a VLSI/CMOS/CCD silicon readout fabricated in 1.25 micrometers CMOS with two poly and three metal interconnect levels.
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