Romain Lallement
at IBM Thomas J Watson Research Ctr
SPIE Involvement:
Conference Program Committee | Author
Profile Summary

Romain Lallement is currently Mask and Patterning Technical Project Leader at IBM’s AI Hardware Center where he leads mask technology development and introduces them into IBM’s test site pipeline. This central role in IBM’s Nanotechnology Laboratory relies on a holistic understanding of advanced photolithography, mask processes, and technology node requirements to support IBM’s roadmap. Recently, Romain achieved extreme ultraviolet (EUV) mask process qualification to enable single exposure yield at 30nm pitch, as well as seamless mask technology introduction for IBM International Semiconductor Development Alliance (ISDA) into leading edge Gate All Around (GAA) technology.
Prior to serving as Mask and Patterning Technical Project Leader, Romain held several team lead positions within ISDA. Working alongside partners from every aspect of the industry, he has managed projects of highly skilled multidisciplinary engineers in photo lithography, reactive ion etching, wet etching and device, contributing to Design Technology Co Optimization (DTCO) across the device Front End of the Line (FEOL), and as well as leading the patterning team test site install. In this role Romain developed key aspect of the spacer, work function metal module, leading to the success of the NanoSheet device architecture for 5 nm and beyond.
Romain holds a master’s degree in Material Science from Polytech Marseille, France. After graduating, Romain joined STMicroelectronics where he worked in R&D as photo lithography engineer on Complementary metal–oxide–semiconductor (CMOS) and embedded nonvolatile memory (eNVM) technology. He has qualified technologies to the highest standards of quality for the most stringent applications in automotive and bio-medical technology. He also successfully managed the transition of an entire manufacturing site to a new APC system significantly improving fab metrics. Romain has co-authored several published articles and holds 7 patents in the US and internationally
Publications (8)

Proceedings Article | 9 March 2021 Presentation + Paper
Proc. SPIE. 11609, Extreme Ultraviolet (EUV) Lithography XII
KEYWORDS: Printing

Proceedings Article | 22 February 2021 Presentation
Proc. SPIE. 11609, Extreme Ultraviolet (EUV) Lithography XII
KEYWORDS: Optical lithography, Roads, Modulation, Metals, Materials processing, Printing, Extreme ultraviolet, Transistors, Extreme ultraviolet lithography, Yield improvement

SPIE Journal Paper | 1 July 2020
JM3 Vol. 19 Issue 03
KEYWORDS: Stochastic processes, Fiber optic illuminators, Line edge roughness, Critical dimension metrology, Defect inspection, Extreme ultraviolet, Inspection, Optical lithography, Yield improvement

Proceedings Article | 23 March 2020 Presentation + Paper
Proc. SPIE. 11323, Extreme Ultraviolet (EUV) Lithography XI
KEYWORDS: Optical lithography, Etching, Inspection, Bridges, Extreme ultraviolet, Critical dimension metrology, Line edge roughness, Stochastic processes, Defect inspection

Proceedings Article | 23 March 2020 Presentation + Paper
Proc. SPIE. 11323, Extreme Ultraviolet (EUV) Lithography XI
KEYWORDS: Lithography, Metals, Scanning electron microscopy, Photomasks, Extreme ultraviolet lithography, Optical proximity correction, SRAF, Line edge roughness, Semiconducting wafers, Stochastic processes

Showing 5 of 8 publications
Conference Committee Involvement (1)
Photomask Technology
26 September 2021 | Monterey, California, United States
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