Dr. Ron L. Gordon
Patent Agent at Brake Hughes Bellermann LLP
SPIE Involvement:
Author | Instructor
Publications (18)

Proceedings Article | 15 March 2006 Paper
Proc. SPIE. 6154, Optical Microlithography XIX
KEYWORDS: Lithography, Polarization, Imaging systems, Manufacturing, Wavefronts, Lens design, Photomasks, Immersion lithography, Critical dimension metrology, Tolerancing

Proceedings Article | 28 May 2004 Paper
Proc. SPIE. 5377, Optical Microlithography XVII
KEYWORDS: Thin films, Lithography, Diffraction, Polarization, Birefringence, Image processing, Photomasks, Optical proximity correction, Modulation transfer functions, System on a chip

Proceedings Article | 28 May 2004 Paper
Proc. SPIE. 5377, Optical Microlithography XVII
KEYWORDS: Lithography, Diffraction, Reticles, Polarization, Opacity, Chromium, Photomasks, SRAF, Semiconducting wafers, Resolution enhancement technologies

Proceedings Article | 3 May 2004 Paper
Proc. SPIE. 5379, Design and Process Integration for Microelectronic Manufacturing II
KEYWORDS: Lithography, Nano opto mechanical systems, Manufacturing, Very large scale integration, Photomasks, Optical proximity correction, Critical dimension metrology, Semiconducting wafers, Model-based design, Resolution enhancement technologies

Proceedings Article | 31 December 2003 Paper
Proc. SPIE. 5182, Wave-Optical Systems Engineering II
KEYWORDS: Lithography, Lithographic illumination, Imaging systems, Fourier transforms, Numerical integration, Photoresist materials, Transmittance, Photomasks, Paraxial approximations, Systems modeling

Showing 5 of 18 publications
Course Instructor
SC482: Mask Topography Effects in Reticle Enhancement Technologies and Next-Generation Lithography
This course will provide attendees with a basic understanding of how mask topography affects the intended behavior of commonly used reticle enhancement technologies such as phase-shift masks, optical proximity correction, and subresolution assist features, as well as defect printability. Moreover, the importance of mask topographic effects for EUV-lithography and for alignment mark analysis will be discussed. The intended outcome of the course is to learn the physical basis for scattering effects resulting from the topography, what resources are available to quantify these effects, and what steps might be taken to achieve "pre-scatter" intended results.
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