Dr. Rossen A. Yankov Profile

Dr. Rossen A. Yankov

at Inst für Ionenstrahlphys & Mat

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Author

Publications (6)

Proceedings Article | 15 September 2004 Paper

Fabrication and evaluation of efficient light emitters comprising nanocluster-rich SiO2 layers

Rossen Yankov, Thoralf Gebel, Lars Rebohle, Thomas Trautmann, Wolfgang Skorupa, Guenter Gauglitz, Ruediger Frank

Proceedings Volume 5450, (2004) https://doi.org/10.1117/12.545402

KEYWORDS: Electroluminescence, Silicon, Germanium, Oxides, Annealing, Light emitting diodes, Plasma treatment, Electrodes, Plasma, Sensors

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Proceedings Article | 7 April 2004 Paper

Nanocluster-rich silicon dioxide layers: electroluminescence and charge trapping

Thoralf Gebel, Lars Rebohle, Rossen Yankov, Alexi Nazarov, Wolfgang Skorupa

Proceedings Volume 5445, (2004) https://doi.org/10.1117/12.560661

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Proceedings Article | 17 April 2001 Paper

Visible photoluminescence from Ge+-ion-implanted SiOxNy annealed under hydrostatic pressure

Ida Tyschenko, K. Zhuravlev, E. Vandyshev, Andrzej Misiuk, Rossen Yankov, Lars Rebohle, Wolfgang Skorupa

Proceedings Volume 4413, (2001) https://doi.org/10.1117/12.425438

KEYWORDS: Annealing, Germanium, Ions, Silicon, Chemical species, Tantalum, Luminescence, Visible radiation, Silica, Heat treatments

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Proceedings Article | 25 January 2000 Paper

Influence of internal stress fields due to point defect clusters on interstitial diffusion in SiC under irradiation

Peter Rybin, Dmitri Kulikov, Yuri Trushin, J. Petzoldt, Rossen Yankov

Proceedings Volume 4064, (2000) https://doi.org/10.1117/12.375445

KEYWORDS: Silicon carbide, Diffusion, Ions, Aluminum, Solids, Ion implantation, Annealing, Doping, Silicon, Carbon

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Proceedings Article | 5 May 1999 Paper

Theoretical and experimental studies of (AlN)1-x(SIC)x layer structures formed by N+ and Al+ coimplantation in 6H-SiC

Dmitri Kulikov, Joerg Pezoldt, Peter Rybin, Wolfgang Skorupa, Yuri Trushin, Rossen Yankov

Proceedings Volume 3687, (1999) https://doi.org/10.1117/12.347431

KEYWORDS: Silicon carbide, Ions, Diffusion, Aluminum, Annealing, Ion implantation, Virtual colonoscopy, Aluminum nitride, Electronics, Physics

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Proceedings Article | 1 January 1998 Paper

Computer simulation and RBS/C studies of high-dose N+ and Al+ co-implantation in 6H-SiC

Vladimir Kharlamov, Dmitri Kulikov, Yu. Truschin, D. Tsigankov, Rossen Yankov, Matthias Voelskow, Wolfgang Skorupa, Joerg Pezoldt

Proceedings Volume 3345, (1998) https://doi.org/10.1117/12.299606

KEYWORDS: Silicon carbide, Aluminum, Chemical species, Ions, Ion beams, Scattering, Carbon, Computer simulations, Annealing, Process modeling

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Showing 5 of 6 publications

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