Dr. Rui Yang Profile

Dr. Rui Yang

at Huazhong Institute of Electron-Optics

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Proceedings Article | 31 January 2023 Paper

Simulation of SAGCM structure InGaAs/InP SPAD using COMSOL multiphysics

Rui Yang

Proceedings Volume 12505, 1250502 (2023) https://doi.org/10.1117/12.2664526

KEYWORDS: Computer simulations, Semiconductors, Quantum efficiency, Indium gallium arsenide, Numerical simulations, Single photon

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InGaAs/InP single photon avalanche photodiode (SPAD) is important for quantum communication, and LIDAR applications in the near-infrared (NIR) wavelength range, between 0.9 µm and 1.7 µm. Compared with other optoelectronic devices, SPAD has two main advantages: high quantum efficiency and high detection efficiency. In this study, the design and simulating of a separate absorption, grading, charge, and multiplication (SAGCM) structure InGaAs/InP SPAD were conducted by using COMSOL Multiphysics. The electric-field distribution was studied under the given thickness and dopant concentration of each layer of the SPAD. It was found that the edge pre-breakdown of planar-type SPAD resulted from the intense electric field at the junction bend can be prevent from happening by using gaussian type dopant distribution profile. The punch-through voltage and the breakdown voltage were also focused. The results show that the punch-through voltage and the breakdown voltage was 55 V and 65V respectively. In addition, the electric field nonuniformity of the avalanche area increases greatly after the bias voltage exceeded the punch-through voltage.

Proceedings Article | 15 February 2022 Paper

Optical system design of 64×64 InGaAs/InP single photon avalanche diode (SPAD) focal plane arrays

Rui Yang

Proceedings Volume 12166, 1216613 (2022) https://doi.org/10.1117/12.2608046

KEYWORDS: Single photon, Optical design, Avalanche photodetectors, Staring arrays, Avalanche photodiodes, Sensors

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In this study, the optical system of 64×64 InGaAs/InP avalanche photodiode (APD) focal plane arrays for single photon detectionin in the near-infrared region (0.9~1.65 μm) was designed. The optical system of APD arrays is of great importance, since APD is much more sensitive to light compared with PD detectors, even a slight optical system change may affect the detector working state greatly. The optical design of the window, MLA and SPAD were focused in this study. The window is a typical glass-to-metal structure consist of a metal base part (4J29 alloy) and a glass window part (saphhire). The surface of the 4J29 kovar alloy is coated with Ni with the sickness from 1.30 μm to 8.90 μm, and the surface of the Ni coated layer is over lapped with another Au layer (sickness: 1.30 μm to 5.70 μm). In order to improve the light absorption efficiency, micro lens array (MLA) was used to focus the light to each pixel. Proper optical structure in the SPAD could suppress optical crosstalk, by adding optical isolate structure and a anti-reflection (AR) coating layers in SPAD.

Proceedings Article | 15 February 2022 Paper

Package structure design of 64×64 InGaAs/InP SPAD assembly

Rui Yang

Proceedings Volume 12166, 1216625 (2022) https://doi.org/10.1117/12.2614489

KEYWORDS: Structural design, Single photon, Packaging, Single photon detectors

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In this study, the package structure of 64×64 InGaAs/InP single photon avalanche diode (SPAD) was analyzed and designed. The vacuum package shell which contains 104 pins is made of kovar alloy (4J29). The shell window is a typical glass-to-metal structure, which consist of a metal base part and a glass window part (sapphire). W-Cu heat sink was used for the extraction of heat generated by the chips and the thermoelectric cooler (TEC). Micro lens array (MLA) was used to concentrate the light to improve the light absorption efficiency. The chips were mounted on a AlN ceramic substrate, which is used as a wire bonding buffer layer, as well as a good heat dissipation channel. A three-stage TEC was used to stabilize the SPAD working temperature at about 210K. Schematic diagram of the wire bonding designs, and the main technological process steps of package were also given.

Proceedings Article | 12 March 2021 Paper

Design and simulation of InGaAs/InP avalanche photodiode for single photon detection

Rui Yang

Proceedings Volume 11763, 1176318 (2021) https://doi.org/10.1117/12.2586268

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InGaAs/InP avalanche photodiode (APD) is essential for LiDAR applications. Compared with other optoelectronic devices, APD has two main advantages: high quantum efficiency and high detection efficiency. In this study, the design and simulation of a InGaAs/InP APD for single photon detection was conducted. And the APD is with a separate absorption, grading, charge, and multiplication (SAGCM) structure. Silvaco TCAD was used to simulate and optimize the layer thickness and dopant concentration, the reach-through and breakdown voltage, and the light detection efficiency. The results show that the InGaAs/InP APD structure proposed in this study is qualified for single photon detection in the wavelength range of 0.9μm to 1.6μm.

Proceedings Article | 12 March 2021 Paper

Fabrication of 64×64 InGaAs/InP avalanche photodiode (APD) focal plane arrays

Rui Yang

Proceedings Volume 11763, 117631Z (2021) https://doi.org/10.1117/12.2586314

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In this study, the fabrication of the 64×64 InGaAs/InP avalanche photodiode （APD）focal plane arrays for single photon detection in the near-infrared region (0.9~1.65 μm) was conducted. The APD is with a separate absorption, grading, charge, and multiplication (SAGCM) structure. The structure and material parameters of the epitaxy layers and the electrodes were described in detail. Backside illumination mesa structure arrays are successfully created. Sample with surface SiNx layer with the thickness of 200 nm is found have higher light response. The electrical properties tested indicate that the quality of the APD arrays is uniform, and the signal to noise ratio (SNR) is in a very low level, which meet the image sensing requirement. Indium bumps, which was used for flip-chip micro-array was found with good shape after the deposition and reflow processes.

Proceedings Article | 12 March 2019 Paper

Morphology study of ZnTe crystals grown from Te-rich solution

Rui Yang

Proceedings Volume 11023, 110233C (2019) https://doi.org/10.1117/12.2517301

KEYWORDS: Crystals, Crystallography, Tellurium, Scanning electron microscopy, Semiconducting wafers, Thermodynamics, Optoelectronics, Etching, Diffusion, Signal processing

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Scanning electron microscope (SEM) was used as a powerful tool to analyze the morphology of ZnTe crystals grown from Te solution. ZnTe crystals found on the end of ZnTe ingot are with micron- to submilimeter size, and their shapes can generally be classified into polyhedral type with smooth facets, and skeletal type with concave faces. The morphology formation mechanisms were discussed. It was found, the ZnTe crystal shape and surface morphology is very sensitive to the growth condition. In spite of the thermodynamics factor (Gibbs free energy theory), the kinetic factors, such as the crystal size and crystalline driving force, play more essential roles in the control of the shape of ZnTe crystals.

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