InGaAsP/InP rectangular ring lasers based on active vertical coupler structure are demonstrated in terms of loss-reduction.
Varied thresholds for different configuration devices with different coupling current have been
measured. The smallest threshold current of 75mA has been achieved in the device with the coupler length of
300μm and coupling current of 30mA. Such variation has also been calculated assuming different fabrication
loss. Their loss mechanisms have been investigated based on threshold analysis, which should benefit to further
optimize loss-reduced semiconductor polygon ring lasers based on active vertical coupler structure.
A novel approach to achieving a polarization-insensitive semiconductor optical amplifier is presented. The active layer consists of graded tensile strained bulk-like structure, which can not only enhance TM mode material gain and further realize polarization-insensitivity, but also get a large 3dB bandwidth due to different strain introduced into the active layer. 3dB bandwidth more than 40nm, 65nm has been obtained in the experiment and theory, respectively. The characteristics of such polarization insensitive structure have been analyzed. The influence of the amount of strain and of the thickness of strain layer on the polarization insensitivity has been discussed.
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