Dr. Ryan L. Burns Profile

Dr. Ryan L. Burns

Principal Research Scientist

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Publications (8)

Proceedings Article | 22 February 2021 Presentation + Paper

Nano-scale effects of selective spin-on deposition

Ryan Burns, Yuanyi Zhang, Colton D'Ambra, Mark Somervell, Sean Berglund, Michael Carcasi, Lior Huli, Muramatsu Makoto, Rachel Segalman, Craig Hawker, Christopher Bates

Proceedings Volume 11612, 1161205 (2021) https://doi.org/10.1117/12.2583086

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Proceedings Article | 26 April 2017 Presentation + Paper

EPE improvement thru self-alignment via multi-color material integration

Nihar Mohanty, Jeffrey Smith, Lior Huli, Cheryl Pereira, Angelique Raley, Subhadeep Kal, Carlos Fonseca, Xinghua Sun, Ryan Burns, Richard Farrell, David Hetzer, Andrew Metz, Akiteru Ko, Steven Scheer, Peter Biolsi, Anton DeVillers

Proceedings Volume 10147, 1014704 (2017) https://doi.org/10.1117/12.2258108

KEYWORDS: Optical lithography, Front end of line, Back end of line, Etching, Control systems, Semiconducting wafers, Logic, Extreme ultraviolet, TCAD, Computer simulations, Photomasks, Lithography, Metals

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As the industry marches on onto the 5nm node and beyond, scaling has slowed down, with all major IDMs & foundries predicting a 3-4 year cadence for scaling. A major reason for this slowdown is not the technical challenge of making features smaller, but effective control of variation that creeps in to the fabrication process. That variability manifests itself as edge placement error (EPE), which has a direct impact on wafer yield. Simply defined as the variance between design intent vs. actual on-wafer results, EPE is one of the foremost challenges being faced by the industry at the advanced node for both logic and memory. This is especially critical at three stages: the front end of line (FEOL) STI patterning; middle of line (MOL) contact patterning; and back end of line (BEOL) trench patterning where the desired tight pitch demands EPE control beyond the capability of 193i multi-patterning or even EUV single pattern. In order to mitigate this EPE challenge, we are proposing self-alignment of blocks & cuts through a multi-color materials integration concept. This approach, termed as “Self-aligned block or Cut (SAB or SACut)”, simply trades off the un-manageable overlay requirement into a more manageable etch selectivity challenge, by having multiple materials filled in every other trench or line.

In this paper we will introduce self-alignment based block and cut strategies using multi-color materials integration and show implementation for BEOL trench block patterning. We will present a breakdown of the key unit process challenges that were needed to be resolved for enabling the self-alignment such as: (a) material selection of multi-color approach; (b) planarization of spin on materials; (c) void-free gap fill for high aspect ratio features; and last but not the least, (c) etch selectivity of etching one material with respect to all other materials exposed. Further, we will present a comparison of our new self-alignment approach with standard approaches where we will articulate the advantages in terms of EPE relaxation and mask number reduction. We will conclude our talk with a brief snapshot of the future direction of our EPE improvement strategies and our view on the future of patterning beyond 5nm node for the industry.

Proceedings Article | 2 April 2008 Paper

The comparison of OPC performance and run time for dense versus sparse solutions

Amr Abdo, Ian Stobert, Ramya Viswanathan, Ryan Burns, Klaus Herold, Chidam Kallingal, Jason Meiring, James Oberschmidt, Scott Mansfield

Proceedings Volume 6924, 69243G (2008) https://doi.org/10.1117/12.772902

KEYWORDS: Optical proximity correction, Data modeling, Scanning electron microscopy, Computer simulations, Calibration, Performance modeling, Resolution enhancement technologies, Semiconducting wafers, Lithography, Wafer-level optics

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Proceedings Article | 21 March 2006 Paper

Improvements in post-OPC data constraints for enhanced process corrections

Ryan Burns, Yuping Cui, Zengqin Zhao, Ian Stobert, Pat LaCour, Ayman Yehia, Kareem Madkour, Mohamed Gheith, Ahmed Seoud

Proceedings Volume 6154, 61543G (2006) https://doi.org/10.1117/12.656649

KEYWORDS: Optical proximity correction, Photomasks, Inspection, Lithography, SRAF, Printing, Neck, Visualization, Standards development, Defect inspection

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Current state-of-the-art OPC (optical proximity correction) for 2-dimensional features consists of optimized fragmentation followed by site simulation and subsequent iterations to adjust fragment locations and minimize edge placement error (EPE). Internal and external constraints have historically been available in production quality code to limit the movement of certain fragments, and this provides additional control for OPC. Values for these constraints are left to engineering judgment, and can be based on lithography process limitations, mask house process limitations, or mask house inspection limitations. Often times mask house inspection limitations are used to define these constraints. However, these inspection restrictions are generally more complex than the 2 degrees of freedom provided in existing standard OPC software. Ideally, the most accurate and robust OPC software would match the movement constraints to the defect inspection requirements, as this prevents over-constraining the OPC solution. This work demonstrates significantly improved 2-D OPC correction results based on matching movement constraints to inspection limitations. Improvements are demonstrated on a created array of 2D designs as well as critical level chip designs used in 45nm technology. Enhancements to OPC efficacy are proven for several types of features. Improvements in overall EPE (edge placement error) are demonstrated for several different types of structures, including mushroom type landing pads, iso crosses, and H-bar structures. Reductions in corner rounding are evident for several 2-dimensional structures, and are shown with dense print image simulations. Dense arrays (SRAM) processed with the new constraints receive better overall corrections and convergence. Furthermore, OPC and ORC (optical rules checking) simulations on full chip test sites with the advanced constraints have resulted in tighter EPE distributions, and overall improved printing to target.

Proceedings Article | 20 May 2004 Paper

Mesoscale modeling for SFIL simulating polymerization kinetics and densification

Ryan Burns, Stephen Johnson, Gerard Schmid, Eui Kim, Michael Dickey, Jason Meiring, Sean Burns, Nicholas Stacey, C. Grant Willson, Diana Convey, Yi Wei, Peter Fejes, Kathleen Gehoski, David Mancini, Kevin Nordquist, William Dauksher, Douglas Resnick

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.536216

KEYWORDS: Etching, Polymerization, Molecules, Monte Carlo methods, Finite element methods, Lithography, Ultraviolet radiation, Molecular interactions, Scanning electron microscopy, Optical lithography

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Proceedings Article | 14 May 2004 Paper

Rinse additives for defect suppression in 193-nm and 248-nm lithogrophy

Spyridon Skordas, Ryan Burns, Dario Goldfarb, Sean Burns, Marie Angelopoulos, Colin Brodsky, Margaret Lawson, Carole Pillette, Jeffrey Bright, Robert Isaacson, Mark Lagus, Vandana Vishnu

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.537764

KEYWORDS: Adsorption, Lithography, Semiconducting wafers, Polymers, Photoresist processing, Satellites, Molecules, Particles, Photoresist developing, 193nm lithography

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Proceedings Article | 14 May 2004 Paper

Rinse additives for line-edge roughness control in 193-nm lithography

Dario Goldfarb, Sean Burns, Ryan Burns, Colin Brodsky, Margaret Lawson, Marie Angelopoulos

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.537723

KEYWORDS: Line edge roughness, Critical dimension metrology, Lithography, Semiconducting wafers, Extreme ultraviolet lithography, Photoresist materials, Photoresist developing, Photoresist processing, Standards development, Optical lithography

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Proceedings Article | 12 June 2003 Paper

Fundamental study of photoresist dissolution with real-time spectroscopic ellipsometry and interferometry

Sean Burns, Gerard Schmid, Brian Trinque, James Willson, Jennifer Wunderlich, Pavlos Tsiartas, James Taylor, Ryan Burns, C. Wilson

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485182

KEYWORDS: Polymers, Interferometry, Data modeling, Photoresist materials, Water, Ellipsometry, Spectroscopic ellipsometry, Reflectivity, Refraction, Thin films

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Showing 5 of 8 publications

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