In the application of extreme ultraviolet (EUV) lithography, stochastic defects are one of the fundamental issues, and the improvements of the sensitivity of resist materials are one of the requirements for the application of EUV lithography process to the future nodes. As reported before, as the absorption of EUV photons depends on the species of element in each material, we have studied introducing the iodine element to lithography materials for the sensitivity issues in EUV lithography process. On this report, the studies of the effect of applying the iodine-containing material to the underlayer of resist film are shown by monitoring the mechanism of the chemically amplified resist system and the evaluation the performance of patterning.
We are developing the EUV sensitizer for resists and Spin-on-Carbon materials. In previous report, we reported that we had developed the novel materials containing the iodine having high EUV absorption ability, and EUV absorption rate proved to be calculable from density and element composition. In this report, we calculated the improvement rate of the EUV absorption rate when materials with high EUV absorption were used for EUV sensitizers. As the result of this, we found that materials with high EUV absorption were useful for EUV sensitizers. Additionally, we will also report on new materials with a high EUV absorption ability.
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