Broken inversion symmetry and time-reversal symmetry along with large spin-orbit interactions in monolayer transition metal dichalcogenides (TMDs) make them ideal candidates for novel valleytronic applications. Although successful spin transport and detection are very crucial for spintronic/valleytronic devices, electrical spin transport and spin detection due to spin-valley polarization in TMDs is still lacking. An electrical realization of spin transport and detection in TMDs demand perpendicular magnetic anisotropic (PMA) electrodes with very small Schottky barrier height (SBH). Furthermore, formation of large SBH at the metal/TMDs interfaces limits the exploitation and integration of TMDs in spintronic/valleytronic devices.
In this work, we develop ferromagnetic electrodes and integrate them in MoS2 field-effect transistors. We studied the transfer characteristics of these devices and estimated SBH. SBHs extracted in these devices were found to be very small.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.