Dr. Sang-Hee Lee Profile

Dr. Sang-Hee Lee

Corporate VP at SAMSUNG Electronics Co Ltd

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Author

Publications (27)

Proceedings Article | 10 April 2024 Presentation

MBMW's comprehensive requirements and roles for next EUV era and its mass production

Inhwan Noh, Jongmun Park, Heebom Kim, Jin Choi, Sang-Hee Lee, Hojune Lee, Byung-Sup Ahn, Youngsu Sung

Proceedings Volume PC12956, PC1295605 (2024) https://doi.org/10.1117/12.3009572

KEYWORDS: Extreme ultraviolet, Logic

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Proceedings Article | 22 November 2023 Presentation

Multi-column e-beam inspection system for advanced EUV reticles

Kunal Rohilla, David Aupperle, Wenxing Jiang, Seungtak Seo, Sanguk Park, Jongju Park, Jin Choi, Sanghee Lee, Min Choo, Yeonjeong Choi, Paul Chung

Proceedings Volume PC12750, PC127500E (2023) https://doi.org/10.1117/12.3007916

KEYWORDS: Inspection, Reticles, Extreme ultraviolet, Quality control, Manufacturing, Laser systems engineering, Laser manufacturing, Industry, Extreme ultraviolet lithography, Design and modelling

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Proceedings Article | 21 November 2023 Presentation + Paper

PEC-aware MPC for CD quality improvement

Soeun Shin, Boram Lee, Sukho Lee, Eok bong Kim, Mina Kim, Jin Choi, Sanghee Lee, Yutaro Sato, Ahmad Syukri, Itaru Ono, Yohei Torigoe

Proceedings Volume 12751, 127510V (2023) https://doi.org/10.1117/12.2687866

KEYWORDS: Extreme ultraviolet, Critical dimension metrology, Scattering, Modeling, Mathematical optimization, Algorithm development, Point spread functions, Lithography, Backscatter, Semiconductors

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Proceedings Article | 21 November 2023 Presentation + Paper

Improvements on pattern fidelity at high curvature region of curvilinear mask with a novel method of MPC

Ai Kaneko, Taigo Fujii, Itaru Ono, Ahmad Syukri, Yohei Torigoe, Mincheol Kim, Sukho Lee, Eok Bong Kim, Sanghee Lee

Proceedings Volume 12751, 127510U (2023) https://doi.org/10.1117/12.2686942

KEYWORDS: Printing, Optical proximity correction, Photomasks, Lithography, Industry, Electromagnetic simulation, Deformation

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Proceedings Article | 29 September 2023 Paper

New multi-beam mask data preparation method for EUV high volume data

Kyungsup Shin, Sunyoung Kim, Jihyeon Choi, Eokbong Kim, Sanghee Lee, Harald Hoeller-Lugmayr, Amir Moqanaki, Annette Schnettelker, Mathias Tomandl, Christof Zillner, Yohei Torigoe, Taigo Fujii, Ryunosuke Miyake, Mizuki Odaka, Issei Masumoto, Masakazu Hamaji

Proceedings Volume 12915, 129150D (2023) https://doi.org/10.1117/12.2683168

KEYWORDS: Extreme ultraviolet, Design and modelling, Electronic design automation, Algorithm development, Mathematical optimization, Data conversion, Product engineering, Optical proximity correction, Nanofabrication, Lithography

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Proceedings Article | 1 December 2022 Paper

Introduction of new visual analysis program using defect image segmentation for EUV mask mass product at modern load port

Hyunjoo Lee, Kyunghyun Kim, Yeongjun Shim, Jinsung Choi, Jaewhan Sung, Sanghee Lee

Proceedings Volume 12293, 1229303 (2022) https://doi.org/10.1117/12.2641750

KEYWORDS: Image processing, Photomasks, Inspection, Extreme ultraviolet, Coating, Image segmentation, Image quality, Etching, Sensors, Optical inspection

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The EUV (Extreme Ultraviolet) lithography is certainly technology for 10nm or less which was used to mass-produce chips contributes to improving the minimum feature size, reducing the process step by enabling DPT (Double Patterning Technology)-less, and improving Fab. operation. Due to the expansion of EUV layers in mass production of below 5nm, EUV mask layers are continuously increasing for mass product. In order to EUV mask mass product, it is important to investment of very high expensive EUV tools and facilities, improve longterm TAT (Turn Around Time), and management of challenge yields. Among the manager of stable yields which are performed just after every process to minimize the continuous defect of mask during the process handling, take an inspection every single mask is the best way. However, investment in inspection tools and increase in inspection step are not efficient due to inefficient factory operation due to very high cost and long TAT delay. Currently most mask manufacturing companies are using manual visual inspection by human eyes and microscope. In this paper, quality monitoring system was developed to detect micro-unit front and back defects, scratches, contaminations, and coating defects by applying the Image Segmentation technique to photos taken on the front and back of the mask by modern load port (refer to wafer EFEM: End Front Equipment Module). In an effort to understand further, the authors evaluated three image segmentations technologies using CNN (Convolutional Neural Network), Sobel Edge Detector, AI (Artificial Intelligence) for mask yield managing program. This method can provide the means for determining scraps and analyzing complex log files for a quality issue found in mask fabrication. These challenges will make a paradigm shift in mask industry for the EUV mask mass product to make chips. The mask tool manufacturers unify load port specifications, it will be able to contribute to new technology and process improvement in the future.

Proceedings Article | 1 December 2022 Paper

Assessment of contour modeling readiness for curvilinear masks

Raewon Yi, Sukho Lee, Jin Choi, Eok Bong Kim, Sanghee Lee

Proceedings Volume 12293, 1229308 (2022) https://doi.org/10.1117/12.2641692

KEYWORDS: Scanning electron microscopy, Process modeling, Photomasks, Data modeling, Error analysis, Image processing, Statistical analysis, Performance modeling, Lithography, Etching

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Proceedings Article | 16 September 2022 Paper

Ecosystem required for EUV mask curvilinear pattern

Sukho Lee, Raewon Yi, Jihyeon Choi, Eok Bong Kim, Jin Choi, Sanghee Lee

Proceedings Volume 12325, 123250V (2022) https://doi.org/10.1117/12.2642025

KEYWORDS: Scanning electron microscopy, Photomasks, Ecosystems, Extreme ultraviolet, Error analysis, Manufacturing

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Proceedings Article | 16 September 2022 Paper

Status of curvilinear data format working group

Jin Choi, Soo Ryu, Sukho Lee, Minah Kim, Sanghee Lee, Peter Buck, Bhardwaj Durvasula, Sayalee Gharat, Vlad Liubich

Proceedings Volume 12325, 1232508 (2022) https://doi.org/10.1117/12.2641557

KEYWORDS: Photomasks, Optical proximity correction, Extreme ultraviolet, Optical lithography, Mask making

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Proceedings Article | 16 October 2017 Paper

Multi-beam mask writer MBM-1000

Hiroshi Matsumoto, Hideo Inoue, Hiroshi Yamashita, Ryosuke Ueba, Kenji Otoshi, Hirokazu Yamada, Jin Choi, Byoung-Sup Ahn, Jong-Mun Park, Sang-Hee Lee, Shuichi Tamamushi, Chan-Uk Jeon

Proceedings Volume 10451, 1045117 (2017) https://doi.org/10.1117/12.2280502

KEYWORDS: Photomasks, Computer aided design, Data processing, Modulation

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Proceedings Article | 3 October 2016 Paper

The technical consideration of multi-beam mask writer for production

Sang Hee Lee, Byung-Sup Ahn, Jin Choi, In Kyun Shin, Shuichi Tamamushi, Chan-Uk Jeon

Proceedings Volume 9985, 998506 (2016) https://doi.org/10.1117/12.2243129

KEYWORDS: Vestigial sideband modulation, Electron beam lithography, Optical simulations, Electron beams, Photomasks, Optical lithography, Distortion, Modulation, Neodymium, Image registration

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Proceedings Article | 16 September 2014 Paper

Study of heating effect in multi-beam mask writing

Jongsu Kim, Jihoon Kang, Inhwan Noh, Sookhyun Lee, Soeun Shin, Sungil Lee, Hyunchung Ha, Hojune Lee, Jin Choi, Sanghee Lee, Inkyun Shin, Shuichi Tamamushi, Chan-Uk Jeon

Proceedings Volume 9235, 92350Y (2014) https://doi.org/10.1117/12.2065930

KEYWORDS: Finite element methods, Critical dimension metrology, Vestigial sideband modulation, Photomasks, Beam shaping, Chemical reactions, Electron beams, Heat flux, Chemical analysis, Thermal effects

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Proceedings Article | 28 July 2014 Paper

Challenges and technical requirements for multi-beam mask writer development

Sang Hee Lee, Jin Choi, Ho June Lee, In Kyun Shin, Shuichi Tamamushi, Chan-Uk Jeon

Proceedings Volume 9256, 925606 (2014) https://doi.org/10.1117/12.2069731

KEYWORDS: Photomasks, Vestigial sideband modulation, Electron beam lithography, Scattering, Laser scattering, Monte Carlo methods, Image processing, Backscatter, Beam controllers, Calibration

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Proceedings Article | 14 October 2011 Paper

The requirements for the future e-beam mask writer: statistical analysis of pattern accuracy

Sang Hee Lee, Jin Choi, Hee Bom Kim, Byung Gook Kim, Han-Ku Cho

Proceedings Volume 8166, 81661B (2011) https://doi.org/10.1117/12.896977

KEYWORDS: Photomasks, Error analysis, Line edge roughness, Vestigial sideband modulation, Critical dimension metrology, Electron beam lithography, Inspection, Mask making, Image registration, Calibration

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Proceedings Article | 25 September 2010 Paper

Degradation of pattern quality due to strong electron scattering in EUV mask

Jin Choi, Rae Won Lee, Sang Hee Lee, Byung Sup Ahn, Hee Bom Kim, Sang-Gyun Woo, Han Ku Cho

Proceedings Volume 7823, 78230D (2010) https://doi.org/10.1117/12.864212

KEYWORDS: Photomasks, Extreme ultraviolet, Scattering, Monte Carlo methods, Ray tracing, Electron beam lithography, Molybdenum, Metals, Ion beams, Laser scattering

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Proceedings Article | 27 May 2010 Paper

Requirements of e-beam size and position accuracy for photomask of sub-32 nm HP device

Jin Choi, Sang Hee Lee, Hee Bom Kim, Byung Gook Kim, Sang-Gyun Woo, Han Ku Cho

Proceedings Volume 7748, 774819 (2010) https://doi.org/10.1117/12.868174

KEYWORDS: Photomasks, Critical dimension metrology, Electron beams, Lithography, Line edge roughness, Vestigial sideband modulation, Electron beam lithography, Optical proximity correction, Computational lithography, Extreme ultraviolet lithography

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Proceedings Article | 26 May 2010 Paper

Mask writing time explosion and its effect on CD control in e-beam lithography

Sang Hee Lee, Jin Choi, Seong Jun Min, Hee Bom Kim, Byung Gook Kim, Sang-Gyun Woo, Han-Ku Cho

Proceedings Volume 7748, 77480J (2010) https://doi.org/10.1117/12.868264

KEYWORDS: Photomasks, Electron beam lithography, Optical proximity correction, Optical simulations, Error analysis, Beam controllers, Mask making, Error control coding, Vestigial sideband modulation, Lithography

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Proceedings Article | 11 May 2009 Paper

E-beam shot count estimation at 32 nm HP and beyond

Jin Choi, Sang Hee Lee, Dongseok Nam, Byung Gook Kim, Sang-Gyun Woo, Han Ku Cho

Proceedings Volume 7379, 737917 (2009) https://doi.org/10.1117/12.824284

KEYWORDS: Optical proximity correction, Photomasks, Semiconducting wafers, Lithography, Image processing, Line edge roughness, Edge roughness, Electron beam lithography, Critical dimension metrology, Vestigial sideband modulation

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Proceedings Article | 19 May 2008 Paper

Image placement error of photomask due to pattern loading effect: analysis and correction technique for sub-45 nm node

Jin Choi, Sang Hee Lee, Dongseok Nam, Byung Gook Kim, Sang-Gyun Woo, Han Ku Cho

Proceedings Volume 7028, 70281X (2008) https://doi.org/10.1117/12.793074

KEYWORDS: Photomasks, Etching, Image processing, Error analysis, Image registration, Electrons, Electron beam lithography, Lithography, Finite element methods, Critical dimension metrology

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Proceedings Article | 30 October 2007 Paper

Requirements of photomask registration for the 45nm node and beyond: Is it possible?

Jin Choi, Hee Bom Kim, Sang Hee Lee, Dong Hun Lee, Hae Young Jeong, Jeung Woo Lee, Byung Gook Kim, Sang-Gyun Woo, Han Ku Cho

Proceedings Volume 6730, 67301O (2007) https://doi.org/10.1117/12.746571

KEYWORDS: Photomasks, Image registration, Pellicles, Electron beam lithography, Finite element methods, Etching, Optical lithography, Positioning equipment, Error analysis, Distortion

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Proceedings Article | 15 May 2007 Paper

New PEC optimization for the mask fabrication of sub-50-nm memory device

Sanghee Lee, Dongguk Ryu, Junghoon Park, Dongseok Nam, Heebom Kim, Byunggook Kim, Sanggyun Woo, Hanku Cho

Proceedings Volume 6607, 660725 (2007) https://doi.org/10.1117/12.728988

KEYWORDS: Mask making, Photomasks, Electron beam lithography, Monte Carlo methods, Control systems, Optical proximity correction, Electron beams, Laser scattering, Scattering, Backscatter

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Proceedings Article | 20 October 2006 Paper

Feasibility study of mask fabrication in double exposure technology

Jong Gul Doh, Sang Hee Lee, Je Bum Yoon, Doo Youl Lee, Seong Yong Cho, Byung Gook Kim, Seong Woon Choi, Woo Sung Han

Proceedings Volume 6349, 63491U (2006) https://doi.org/10.1117/12.686523

KEYWORDS: Photomasks, Overlay metrology, Semiconducting wafers, Image registration, Thermal effects, Mask making, Reticles, Error analysis, Scanners, Chromium

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Proceedings Article | 20 October 2006 Paper

Study of the beam blur and its effect on the future mask fabrication

Sanghee Lee, Sungho Park, Mihye Ahn, Jonggul Doh, Sungyoon Kim, Byunggook Kim, Seongwoon Choi, Woosung Han

Proceedings Volume 6349, 63490X (2006) https://doi.org/10.1117/12.686472

KEYWORDS: SRAF, Scattering, Electron beams, Mask making, Photomasks, Laser scattering, Critical dimension metrology, Monte Carlo methods, Electron beam lithography, Diffusion

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Proceedings Article | 20 May 2006 Paper

Study of higher electron beam energy for the mask production for 30 nm node technology

Sanghee Lee, Sungho Park, Byunggook Kim, Seongwoon Choi, Woosung Han

Proceedings Volume 6283, 628308 (2006) https://doi.org/10.1117/12.681735

KEYWORDS: Vestigial sideband modulation, Electron beams, Photomasks, Electron beam lithography, Critical dimension metrology, Laser scattering, Scattering, Monte Carlo methods, Backscatter, Data modeling

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Proceedings Article | 20 May 2006 Paper

Mask fabrication results using new laser writing system: Sigma7300

Ho-June Lee, Dong-Suk Nam, Sang-Hee Lee, Hyun-Soo Kim, Jung-Hoon Lee, Hak-Seung Han, Byung-Gook Kim, Seong-Woon Choi, Woo-Sung Han

Proceedings Volume 6283, 62831J (2006) https://doi.org/10.1117/12.681744

KEYWORDS: Photomasks, Particles, Inspection, Laser systems engineering, Mask making, SRAF, Printing, Semiconducting wafers, Light sources, Optical simulations

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Proceedings Article | 9 November 2005 Paper

Analysis of various blur effects on mask CD distortion

Hak-Seung Han, Sang-Hee Lee, Byung-Gook Kim, Seong-Yong Moon, Sung Woon Choi, Woo-Sung Han

Proceedings Volume 5992, 59924V (2005) https://doi.org/10.1117/12.632268

KEYWORDS: Backscatter, Scattering, Electron beam lithography, Photomasks, Critical dimension metrology, Electrons, Distortion, Photoresist processing, Laser scattering, Lithography

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Proceedings Article | 9 November 2005 Paper

Improved modeling of fogging and loading effect correction

Sanghee Lee, Byunggook Kim, Hakseung Han, Dongseok Nam, Seongyong Moon, Seongwoon Choi, Woosung Han

Proceedings Volume 5992, 59924U (2005) https://doi.org/10.1117/12.632078

KEYWORDS: Etching, Critical dimension metrology, Modulation, Dry etching, Photomasks, System on a chip, Backscatter, Data modeling, Electron beams, Electron beam lithography

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Showing 5 of 27 publications

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