Mr. Sang-Ho Yun Profile

Sang-Ho Yun

Principal Engineer at SAMSUNG Electronics Co Ltd

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Publications (5)

Proceedings Article | 12 November 2024 Presentation + Paper

Holistic patterning technology for DRAM 29nm pitch contact hole and pillar patterning

Seunghak Park, Van Tuong Pham, Sangho Yun, Woojin Jung, Hyo Seon Suh, Lander Verstraete, Hyung Jong Bae, Taehoi Park, Victor Blanco Carballo, Seonggil Heo, Kurt Ronse, Chan Hwang

Proceedings Volume 13215, 132150N (2024) https://doi.org/10.1117/12.3034701

KEYWORDS: Optical lithography, Extreme ultraviolet, Directed self assembly, Sustainability, Stochastic processes, Phase shifts, Materials processing, Lithography, Extreme ultraviolet lithography, Design

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Proceedings Article | 10 April 2024 Poster + Paper

Optical diffraction-based methodology to measure on-product EUV exposure focus variations

Willem op 't Root, Jungwan Park, Youngsun Nam, Seho Kim, Hyunwoo Hwang, Jeong Heung Kong, Sang-Ho Yun, Youngseog Kang, Bram Klaassen, Karel van den Bos, Zhe Hou, Aileen Soco, Don Cheon, Jong-Hyuk Yim, Hong-seung Song, Mi-Yeon Baek

Proceedings Volume 12955, 129552Q (2024) https://doi.org/10.1117/12.3010370

KEYWORDS: Semiconducting wafers, Metrology, Extreme ultraviolet lithography, Calibration, Extreme ultraviolet, Diffraction gratings, Scanners, Diffraction, Printing, Optical metrology

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Proceedings Article | 18 March 2015 Paper

Overlay improvement methods with diffraction based overlay and integrated metrology

Young-Sun Nam, Sunny Kim, Ju Hee Shin, Young Sin Choi, Sang Ho Yun, Young Hoon Kim, Si Woo Shin, Jeong Heung Kong, Young Seog Kang, Hun Hwan Ha

Proceedings Volume 9426, 942612 (2015) https://doi.org/10.1117/12.2087196

KEYWORDS: Overlay metrology, Metrology, Semiconducting wafers, Diffraction, Target detection, Error analysis, Scanning electron microscopy, Statistical analysis, Manufacturing, Scanners

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Proceedings Article | 4 April 2012 Paper

New analytical algorithm for overlay accuracy

Boo-Hyun Ham, Sangho Yun, Min-Cheol Kwak, Soon Mok Ha, Cheol-Hong Kim, Suk-Woo Nam

Proceedings Volume 8324, 83240A (2012) https://doi.org/10.1117/12.918002

KEYWORDS: Overlay metrology, Semiconducting wafers, Scanners, Data modeling, Metrology, Error analysis, Front end of line, Back end of line, Photomasks, Nondestructive evaluation

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The extension of optical lithography to 2Xnm and beyond is often challenged by overlay control. With reduced overlay measurement error budget in the sub-nm range, conventional Total Measurement Uncertainty (TMU) data is no longer sufficient. Also there is no sufficient criterion in overlay accuracy. In recent years, numerous authors have reported new method of the accuracy of the overlay metrology: Through focus and through color. Still quantifying uncertainty in overlay measurement is most difficult work in overlay metrology. According to the ITRS roadmap, total overlay budget is getting tighter than former device node as a design rule shrink on each device node. Conventionally, the total overlay budget is defined as the square root of square sum of the following contributions: the scanner overlay performance, wafer process, metrology and mask registration. All components have been supplying sufficiently performance tool to each device nodes, delivering new scanner, new metrology tools, and new mask e-beam writers. Especially the scanner overlay performance was drastically decreased from 9nm in 8x node to 2.5nm in 3x node. The scanner overlay seems to reach the limitation the overlay performance after 3x nod. The importance of the wafer process overlay as a contribution of total wafer overlay became more important. In fact, the wafer process overlay was decreased by 3nm between DRAM 8x node and DRAM 3x node. We develop an analytical algorithm for overlay accuracy. And a concept of nondestructive method is proposed in this paper. For on product layer we discovered the layer has overlay inaccuracy. Also we use find out source of the overlay error though the new technique. In this paper, authors suggest an analytical algorithm for overlay accuracy. And a concept of non-destructive method is proposed in this paper. For on product layers, we discovered it has overlay inaccuracy. Also we use find out source of the overlay error though the new technique. Furthermore total overlay error data is decomposed into two parts: the systematic error and the random error. And we tried to show both error components characteristic, systematic error has a good correlation with residual error by scanner condition, whereas, random error has a good correlation with residual error as going process steps. Furthermore, we demonstrate the practical using case with proposed method that shows the working of the high order method through systematic error. Our results show that to characterize an overlay data that is suitable for use in advanced technology nodes requires much more than just evaluating the conventional metrology metrics of TIS and TMU.

Proceedings Article | 4 April 2012 Paper

A comparison of alignment and overlay performance with varying hardmask materials

Sangho Yun, Soon Mok Ha, Young Min Nam, Cheol-Hong Kim, Suk-Woo Nam

Proceedings Volume 8324, 832407 (2012) https://doi.org/10.1117/12.917412

KEYWORDS: Optical alignment, Refractive index, Overlay metrology, Etching, Optical lithography, Resistance, Signal attenuation, Carbon, Lithography, Semiconducting wafers

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