Airborne chemical contaminants (AMCs) in the lithography cell are responsible for yield-impacting issues such as scanner haze and wafer defects. Detecting and monitoring these chemicals in real-time is critical in IC fabs. Many technologies have been deployed to monitor AMCs, but many of them are not production-worthy solutions that meet the stringent sensitivity and throughput requirements driving Moore's law. Here, we demonstrate a fully integrated AMC monitoring system, Picarro SAM (Sample. Analyze. Monitor.), that detects a variety of chemicals in real-time from multiple locations in a lithography cell. Multiple scanners, track tools, and reticle stockers are monitored 24X7 for excursions of critical inorganic AMCs such as hydrochloric acid, hydrofluoric acid, ammonia, and sulfur dioxide, as well as volatile organic compounds such as acetic acid, PGMEA, NMP, siloxanes, etc. that impact the performance of the lithography process. The SAM system integrates sensors based on Cavity Ring-Down Spectroscopy (CRDS) with a high-performance sampling system. While CRDS is an established technology to detect critical inorganic AMCs, here we demonstrate the ability to measure several critical VOCs using a new technique called broadband CRDS. SAM monitors contaminants in various parts of the scanner and track with multiple sampling tubes extending to a hundred feet or more to accommodate remote areas of the process tool. The SAM system is a fast, easy-to-use, production-ready analytical tool to monitor trace VOC and inorganic contaminants in the parts per trillion to low ppb range within seconds that helps engineers take corrective actions much faster than ever before.
Scatterometry performance enhancement is demonstrated through a holistic approach by utilizing comprehensive information from various sources, including data from different process steps, different toolsets, multiple structures, and multiple optical channels using samples from magnetic hard disk drive manufacturing. Parameter and spectrum feed-forward are performed across multiple targets at the photo step and the photo results are fed forward to the post-reactive ion etch (RIE) step. For an isolated structure with critical dimensions (CD) much smaller than the incident light wavelengths, feed-forward methods improve CD correlation with a general improvement of 20 to 60% in precision and fleet measurement precision (FMP). A second technique examined is hybrid metrology, where inputs from source tools, such as CD-SEM and CD-AFM, are used to determine critical parameters. Hybridization of line edge roughness results in CD and sidewall angle (SWA) FMP improvement of ∼60%. We also demonstrate improved CD accuracy using azimuthal scatterometry at 0, 45, and 90 deg azimuth angles measuring resist lines with CD larger than the incident light wavelengths. FMP reductions of ∼60 and 30% are obtained for CD and SWA. SWA hybridization after RIE results in CD and SWA FMP improvements by >50 and 30%, respectively.
Optical critical dimension (OCD) metrology using scatterometry has been widely adopted for fast and non-destructive in-line process control and yield improvement. Recently there has been increased interest in metrology performance enhancement through a holistic approach. We investigate the benefits of feed-forward of metrology information from prior process steps using samples from magnetic hard disk drive manufacturing. The scatterometry targets are composed of rather isolated gratings that are designed to have better correlation with device features. Two gratings, one with pitch ≈ 10CD, and the other with pitch ≈ 15CD, are measured at post develop and post reactive ion etch (RIE) steps. Two methods: parameter feed-forward (PFF) and spectrum feedforward (SFF) are studied in which the measurement results or spectrum collected on the blanket target at photo step are fed forward to the measurements on the grating structures at post develop or post RIE step. Compared with standard measurement without FF, for the more isolated grating at photo step, both PFF and SFF improve CD correlation from R2=0.96 to R2=0.975 using CD-SEM results measured on device as the reference. Dynamic precision and fleet measurement precision are improved by 20-60%. For post RIE step, PFF and SFF significantly improve CD correlation from R2=0.95, slope=1.09 to R2=0.975, slope=1.03 for the denser grating, and from R2=0.90, slope=0.79 to R2=0.96, slope=0.96 for the more isolated grating. Dynamic precision is generally improved by 20-40%. It is observed that both PFF and SFF are equally efficient in reducing parameter correlation for the application studied here.
Reducing parameter correlations to enhance scatterometry measurement accuracy, precision and tool matching is a crucial component of every modeling effort. Parameter sensitivity can largely depend on the orientation of the plane of incidence relative to the grating orientation. Conventional scatterometry is done with the plane if incidence normal to the grating orientation, whereas azimuthal scatterometry allows measurements at an arbitrary angle or set of angles. A second technique examined in this paper is hybrid metrology where inputs from source tools such as CD-SEM and CD-AFM are used to determine values of critical parameters. The first examples shows LER sensitivity gains by measuring narrow resist lines in an orientation parallel with the long axis of the grating. Hybridization of LER results in a CD and SWA FMP improvement of about 60%. We also showcase the benefits of azimuthal scatterometry measuring resist lines with CD larger than the wavelengths of the incident light. A CD and SWA FMP reduction of about 60% and 30% is obtained using azimuthal scatterometry at 0, 45 and 90 degrees azimuth angles. Hybridization of the ARC SWA after RIE results in CD and resist SWA FMP improvements by over 60% and 30%, respectively.
Evaluation of lithography process or stepper involves very large quantity of CD measurements and measurement
time. In this paper, we report on a application of Scatterometry based metrology for evaluation of binary photomask
lithography. Measurements were made on mask level with ODP scatterometer then on wafer with CD-SEM. 4 to 1
scaling from mask to wafer means 60nm line on wafer translates to 240nm on mask, easily measurable on ODP.
Calculation of scatterometer profile information was performed by a in-situ library-based analysis (5sec/site). We
characterized the CD uniformity, linearity, and metal film thickness uniformity. Results show that linearity measured
from fixed-pitch, varying line/space ratio targets show good correlation to top-down CD-SEM with R2 of more than
0.99. ODP-SEM correlation results for variable pitch shows that careful examination of scatterometer profile results in
order to obtain better correlation to CD SEM, since both tools react differently to the target profile variation. ODP
results show that global CD distribution is clearly measurable with less outliers compared to CD SEM data. This is
thought to be due to 'averaging' effect of scatterometer. The data show that Scatterometry provides a nondestructive and
faster mean of characterizing lithography stepper performanceprofiles. APSM 1st level (before Cr removal) 'dual-space'
CDs and EPSM rectangular contacts were also measured with and results demonstrates that Scatterometer is capable of
measuring these targets with reasonable correlation to SEM.
Optical scatterometry-based metrology is now widely used in wafer fabs for lithography, etch, and CMP
applications. This acceptance of a new metrology method occurred despite the abundance of wellestablished
CD-SEM and AFM methods. It was driven by the desire to make measurements faster and with
a lower cost of ownership. Over the last year, scatterometry has also been introduced in advanced mask
shops for mask measurements. Binary and phase shift masks have been successfully measured at all desired
points during photomask production before the pellicle is mounted. There is a significant benefit to
measuring masks with the pellicle in place. From the wafer fab's perspective, through-pellicle metrology
would verify mask effects on the same features that are characterized on wafer. On-site mask verification
would enable quality control and trouble-shooting without returning the mask to a mask house. Another
potential application is monitoring changes to mask films once the mask has been delivered to the fab (haze,
oxide growth, etc.). Similar opportunities apply to the mask metrologist receiving line returns from a wafer
fab. The ability to make line-return measurements without risking defect introduction is clearly attractive.
This paper will evaluate the feasibility of collecting scatterometry data on pelliclized masks. We explore
the effects of several different pellicle types on scatterometry measurements made with broadband light in
the range of 320-780 nm. The complexity introduced by the pellicles' optical behavior will be studied.
Research and development efforts on EUV technology for the 32 nm node and beyond are progressing rapidly. Although a big concern is defect control on EUV mask blanks, control of linewidth and profile will be an important factor in acceptance of EUV technology. In this paper, we discuss the issues and strategies surrounding CD and profile metrology of EUV masks. EUV mask blanks from Hoya and Asahi Glass Company were used in this study, and were measured on a Nanometrics Atlas-M measurement tool, generating CD and profile results using Timbre Technologies' ODP analysis software. The Atlas-M tool has dual optics, enabling use of either normal incidence Reflectometry or oblique incidence Ellipsometry, either of which may be used for Scatterometry. The relative merits of each of these technologies are discussed. The complex EUV stack presents numerous challenges for metrology; the critical task is to accurately measure the optical constants of the numerous layers in the stack. The multilayer MoSi stack is effectively modeled as a single layer for optical constants determination. Photoresist FEP171 was used for the patterning, and the CD and profile of the resist were measured, after which the absorber layer was etched. Parameters characterized in this study include photoresist CD and height, etched Absorber CD, and capping layer over etch. Correlation to top-down CD-SEM, cross-sectional SEM, and AFM is reported. No charging or other deformation was observed on the EUV masks. The data show that ODP Scatterometry provides a non-destructive method for monitoring resist CD and profile, as well as etched structure CD and over/underetch on EUV masks.
KEYWORDS: Scanning electron microscopy, Critical dimension metrology, Photomasks, Atomic force microscopy, Binary data, 3D modeling, Cadmium, Metrology, 3D acquisition, 3D metrology
Scatterometers are widely used for line/space or 2D structure measurements in both wafer and mask industries. This
technology is now gaining more acceptance and is being applied 3D structures such as contacts and pads. Contact CDs
and trench depth in photomasks are critical monitoring parameters in mask industry and are discussed here.
We are reporting contact CDs and profile results measured from targets from Binary, PSM, and Crless plates. The
strategies of model creation such as using simple trapezoid versus more advanced shapes affect how well SWA and
footings can be measured and reported from these structures. We are reporting CD and profile information obtained
with Scatterometer, and then comparing CD SEM, AFM, and cross section SEM. Multiple different modeling
configurations were used with different levels of complexity, and we report on optimum modeling strategy to obtain
profile information from 3D structures. The relationship between the modeling strategy versus cross correlation between
different parameters is discussed. CD linearity, uniformity, and other correlation parameters to the reference CD SEM
tool are reported. Target CDs ranged from 60nm up to 600nm. CD uniformity reported from Scatterometry is 20~30%
less than that from CD SEMs. This CD uniformity improvement is due to the fact that scatterometer beam samples
dozens to hundreds of samples and 'averages' profile parameters, thus eliminating local effect such as line edge
roughness. Contact depth are also measured and compared to AFM, in which the bias between the two tools are usually
around 3nm or less. In terms of smallest target CD measurable, in this paper we report routine measurement of small
contacts with middle CD down to 65nm (bottom CD close to 50nm) with both RP and SE mode.
Application of scatterometry method to mask contacts and pads leads to accurate and fast measurement of 3D profiles,
and opens up possibility of in-line monitoring of profile information due to the higher runrate compared to traditional
metrology tools.
Linewidth and etch depth control on the photomask is rapidly becoming a major concern in mask processing. In this paper, we report on a Scatterometry based metrology system that provides line width and etch profile measurements on Embedded PSMs on Intel's 65nm and 45nm node test masks. Measurements were made with Nanometric's Atlas-M reticle measurement system. Spectrum data obtained from plates were analyzed using Timbre Technologies' ODP analysis software. We characterized the CD uniformity, linearity, sidewall angle and thickness uniformity. Significant reduction in time per measurement is achieved when compared to CD-SEM. ODP Scatterometry reported a 2x reduction in the CD Uniformity compared to that reported from the SEM. This reduction is typically due to outliers reported by the CD-SEM that is averaged out in ODP Scatterometry. Good correlation to top-down CD-SEM and cross-sectional SEM is reported. R-squared correlation of >0.99 (ODP scatterometry to top down CD-SEM) is reported. Profile measurements from ODP show excellent match to cross-section SEM. The data show that Scatterometry provides a nondestructive way to monitor basic etch profile combined with relatively little CD metrology lag.
Control of line width and profile is gaining more importance in photomask processes as the industry moves toward 45nm node and beyond. In this paper we report scatterometer measurements of CD and profile data from chrome-less mask profile processed using Intel's 65nm and 45nm node technology. As opposed to the highly charging nature of chrome-less plate during CD SEM measurements, scatterometry provides a non-charging optical alternative to measure critical CDs. As for trench depth measurement, scatterometry has big advantage over AFM with its much higher throughput (about 5 seconds vs. >2min). Since quartz plate is very transmittive to lights, we use eliipsometer-based scatterometry instead of conventional reflective-photometer based one. Parameters characterized in this study include line/space CD, contact CD, and trench depth. Correlation to top-down CD-SEM, cross-sectional SEM, and AFM is reported. Line CD uniformity reduction is more than 30% compared to that from CDSEM, due to averaging effect of scatterometry as well less lack of charging during measurements. Depth bias to AFM was around 3nm in both DCCD and FCCD height measurements we performed. The data show that Scatterometry provides a nondestructive way to
monitor basic etch profile combined with relatively little time loss from measurement step.
In this paper, we report on a Scatterometry based metrology system that provides line width, line thickness, and
trench depth measurements on APSM and EPSM photomasks. Measurements were made with scatterometer in DUV to
visual wavelength range. Calculation of profile information was performed by a library-based analysis software. We
characterized the CD uniformity, linearity, trench depth uniformity. Results show that linearity measured from fixed-pitch,
varying line/space ratio targets show good correlation to top-down CD-SEM with R2 of more than 0.99. EPSM
FCCD data was obtained from both scatterometer and CDSEM. Results show that MEEF calculation based on
scatterometer CD shows about 40% improvement in removing mask-induced CD non-uniformity, compared to
calculation based on CD SEM data. This is thought to be due to 'averaging' effect of scatterometer. Depth measurements
from APSM show that scatterometer makes good correlations to AFM, generally within 3nm of each other. The data
show that Scatterometry provides a nondestructive means of monitoring PSM profiles combined with relatively little
time loss.
As the on-wafer transistor sizes shrink, and gate nodes run well below 90 nm, it is becoming extremely important to accurately characterize and control the CDs on the Mask. Since Phase shift technology for masks is essential to achieve the geometries of the future, CD and profile metrology on the phase shifting materials becomes critical. Phase shift materials, such as MoSi, present unique challenges for metrology. In this paper, we discuss the effect of the optical properties of MoSi on CD and profile metrology and the challenges in obtaining the correct optical constants needed for accurate metrology. Optical Scatterometry based metrology was used successfully with both Spectroscopic Ellipsometry (SE; λ~ 210nm-1000nm) and Spectroscopic Polarized Reflectometry (Rp; λ: 320nm-780nm). Spectra were collected with Nanometrics' Atlas-M reticle measurement system and were analyzed using ODP software from Timbre Technologies, Inc. Unlike chrome, the optical properties of the MoSi on the grating structure differ significantly from that on the rest of the blanket area of the mask. Unique modeling techniques are required to account for this difference. Etching of the chrome also causes changes in the MoSi top layer that need to be accounted. Data will be presented showing the sensitivities of the CD structures on the mask to variations of Quartz and MoSi optical constants. CD and profile sensitivities to roughness of the MoSi grating structure are also demonstrated.
In this paper, we report on a Scatterometry based metrology system that provides line width and thickness measurements on binary, APSM, EPSM masks both on FCCD (final check CD) and DCCD (develop check CD), fabricated on 193nm process. Measurements were made with scatterometer in DUV to visual wavelength range. Calculation of profile information was performed by a library-based analysis software. We characterized the CD uniformity, linearity, trench depth uniformity. Results show that linearity measured from fixed-pitch, varying line/space ratio targets show good correlation to top-down CD-SEM, meanwhile linearity from wide range of different pitch generally does not correlate well and therefore post-measurement calibration is needed. Depth measurements from APSM show that scatterometer makes good correlations to AFM. The effect of optical properties of the film layers on metrology performance is discussed. The data show that Scatterometry provides a nondestructive of monitoring basic etch profile combined with relatively little time loss from CD measurement step.
Phase Profilometry (PP) has been proposed for in-situ/in-line critical dimension and profile measurements. This is usually accomplished by using rigorous electromagnetic theory to simulate the optical responses of gratings with different profiles, and by using spectroscopic ellipsometry/reflectometry to measure 1-D gratings. In this paper, phase profilometry is applied to the lithography process for cross-sectional profile extraction metrology. A focus-exposure experiment was conducted using Sematech's 193 nm lithography tool. Comparison between the measurements from CD-SEM, CD-AFM and PP are discussed and explained.
Specular Spectroscopic Profilometry (SSP), or Phase Profilometry (PP), has been proposed for in-situ/in-line patterned thin-film measurements. This is usually accomplished by using a rigorous electromagnetic theory to simulate the optical responses of gratings with different profiles, and by using spectroscopic ellipsometry/reflectometry to measure 1-D gratings. In this paper, specular spectroscopic profilometry is applied in DUV lithography and etch processes as a profile extraction metrology. One focus-exposure experiment is conducted by using 0.18 micrometer lithography technology, another focus-exposure experiment is conducted by using 0.18 micrometer lithography and etch technology. Comparison between the measurement from CD-SEM, CD-AFM and PP are discussed and explained.
CD AFM (Critical Dimension Atomic Force Microscopy) offers a potential advantage in mask metrology not found in more common techniques: sidewall profiling. The uncertainty of CD width measurement can be reduced because the sidewall positions are found directly, instead of relying on an interpretation of brightness as with other methods. And, unlike with the other techniques, a thickness measurement is available. To demonstrate that this potential could be realized in a production environment, a real CD AFM tool was used to run CD long-term precision measurements on etched masks. Results indicate that a precision in width measurements of 3 nm at 3(sigma) can be achieved. Preliminary results for resist masks indicate that a similar performance is possible. Masks, as opposed to wafers, present additional complications for CD AFM. These problems and their solutions are discussed. Calibration techniques are also presented, as they are a crucial concern in metrology.
Scatterometry is a one of the few types of metrology that has true in-situ potential for deep submicron CD and profile analysis. To date, commercial prototypes have been used to establish scatterometry based on single wavelength, multiple incident angle inspection. We extend this idea by deploying specular spectroscopic scatterometry (SSS). Conventional scatterometry is designed to measure either many diffraction orders or variable incident/collection angle at a single wavelength. Specular spectroscopic scatterometry is designed to measure the 0th order diffraction responses at a fixed angle of incidence. Specular spectroscopic scatterometry can make direct use of the existing spectroscopic ellipsometry equipment. We show that SSS provides an accurate, inexpensive, and non-destructive CD metrology solution.
With the increasing move towards measurement of smaller and smaller dimensions, the reliability of existing metrology approaches is begin called into question. The most widely used approach for CD measurement in a fabrication environment is the use of Low Voltage Scanning Electron Microscopy. SEMs are routinely used in industry for top-down measurements of lines, spaces, and contacts in the production line. The destructive approach of cross section SEMs is used for trouble shooting and analysis. Electrical CD measurements are also routinely used to measure the CDs of conducting layers in the production environment. However, electrical CD metrology is not appropriate for the majority of surfaces that are non-conductive, such as those with photoresist. It has been speculated for a while n ow that the AFM can provide a viable alternative by overcoming all the drawbacks of the other metrology techniques. This paper address this issue and discusses the relative merits of the AFM as compared to the others. The measurement bias between the three techniques on isolated line features ranging from 0.1 to 0.3 microns is compared. The ability of the AFM to measure profiles is discussed.
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