Ms. Saranya Reddy Shriram Profile

Saranya Reddy Shriram

at Indian Institute of Technology Bombay

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Author

Publications (7)

Proceedings Article | 3 October 2022 Poster + Presentation + Paper

A comparative study of Dots-in-a-Double-Well (DDWELL) heterostructures with SK, SML and coupled SK-on-SML as active region

Archishman Saha, Neelu Neelu, Ravindra Kumar, Saranya Reddy Shriram, Subhananda Chakrabarti

Proceedings Volume 12200, 122000C (2022) https://doi.org/10.1117/12.2633251

KEYWORDS: Heterojunctions, Absorption, Quantum dots, Luminescence, Indium arsenide, Sensors, Optoelectronic devices, Crystals, Security technologies, Quantum wells

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Proceedings Article | 5 March 2022 Poster + Presentation + Paper

A systematic post-growth thermal annealing step for receding size inhomogeneity inside multiple InAs/Inx(Ga)1-xAs sub-monolayer quantum-dot heterostructures

Saranya Reddy Shriram, Raveesh Gourishetty, Arjun Mandal, Samishta Choudhary, Ajay Kumar, Subhananda Chakrabarti

Proceedings Volume 12010, 120100D (2022) https://doi.org/10.1117/12.2610692

KEYWORDS: Annealing, Gallium arsenide, Indium arsenide, Photodetectors, Heterojunctions, Quantum dots, Phonons, Luminescence, Night vision systems, Surveillance systems

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Proceedings Article | 1 August 2021 Poster + Presentation + Paper

Fine-tuning of electron Eigen energy states in GaAs1-xNx capped InAs sub-monolayer quantum dots

Saranya Reddy Shriram, Subhananda Chakrabarti

Proceedings Volume 11800, 118001C (2021) https://doi.org/10.1117/12.2595133

KEYWORDS: Gallium arsenide, Indium arsenide, Vertical cavity surface emitting lasers, Quantum dots, Heterojunctions, Absorption, Security technologies, Quantum wells, Luminescence, Interfaces

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Proceedings Article | 18 April 2021 Presentation + Paper

Influence of Sb composition on the band alignment and optical characteristics of strain coupled vertically aligned InAs/GaAsSb quantum dots

Raveesh Gourishetty, Saranya Reddy Shriram, Debi Prasad Panda, Subhananda Chakrabarti

Proceedings Volume 11771, 117710R (2021) https://doi.org/10.1117/12.2589255

KEYWORDS: Antimony, Indium arsenide, Luminescence, Quantum dots, Optoelectronic devices, Optical simulations, Infrared detectors, Gallium arsenide

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The influence of the Sb composition both on the band-alignment and the optical characteristics of strain-coupled vertically aligned InAs/GaAsSb Stranski-Krastanov (SK) quantum dots (QDs) embedded on six stack InAs/In_0.15Ga_0.85As Sub-monolayer (SML) matrix has been studied using nextnano simulation tool. A ten-layer strain-coupled InAs SK QDs electronically coupled to six stack SML QDs which has been the optimized structure is utilized in this study. Four different structures with Sb composition of 10%, 14%, 18% and 22% are chosen as a capping layer over InAs QDs and it is found that a transition in the band-alignment from type-I to type-II occurs when the Sb composition is increased above 14%. The optical characteristics have been simulated for these heterostructures which showed a red shift in the photoluminescence (PL) peak values with increase in the Sb composition. The PL peak value of ~1035 nm has been validated with the experimental PL data for the ten-layer InAs/GaAs SK QDs grown on six stack SML QDs without GaAsSb capping. With the similar dot size, the PL peak occurred at ~1115 nm, ~1159 nm, ~1209 nm and ~1284 nm, respectively, for 10%, 14%, 18% and 22% Sb composition structures. Investigation of electron and hole eigen states has been done for these structures. The usage of GaAsSb capping layer (strain reducing layer: SRL) over the InAs SK QDs allows an undulated strain transition from one SK QD layer to the other. The hydrostatic and the biaxial parts of the strain are estimated and a decrease in the hydrostatic compressive strain in the QDs has been observed with increase in the Sb composition. An increase in the biaxial strain with Sb composition has been noticed which result in lowering of the energy band gap and a red shift in the PL emission wavelength. Along with type-II band alignment, the low hydrostatic strain with 22% Sb composition facilitates lower dark current and also a red shifted PL results from ~1035 nm to ~1284 nm shows a promising direction for the realization of several optoelectronic device applications.

Proceedings Article | 18 April 2021 Poster + Presentation + Paper

Enhancing the quantum confinement effect by means of quaternary AlxGayIn1-x-yAs barrier material in type-I InAs/InxGa1-xAs SML QDs for laser applications

Saranya Reddy Shriram, Subhananda Chakrabarti

Proceedings Volume 11777, 117770Y (2021) https://doi.org/10.1117/12.2589249

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Proceedings Article | 1 April 2020 Presentation + Paper

Study on optical properties and strain distribution of InAs/InGaAs sub-monolayer quantum dot heterostructure with multiple stacking layers

Saranya Reddy Shriram, Sanowar Alam Gazi, Ravindra Kumar, Jhuma Saha, Debiprasad Panda, Arjun Mandal, Subhananda Chakrabarti

Proceedings Volume 11345, 113452X (2020) https://doi.org/10.1117/12.2555871

KEYWORDS: Gallium arsenide, Heterojunctions, Quantum dots, Optical properties, Raman spectroscopy, Phonons, Indium arsenide, Luminescence, X-ray diffraction

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Proceedings Article | 1 April 2020 Presentation + Paper

Influence of InGaAs matrix thickness on the optical properties and strain distribution in self-assembled sub-monolayer InAs quantum dot heterostructures

Saranya Reddy Shriram, Ravindra Kumar, Sanowar Alam Gazi, Jhuma Saha, Debiprasad Panda, Arjun Mandal, Subhananda Chakrabarti

Proceedings Volume 11345, 113452W (2020) https://doi.org/10.1117/12.2555864

KEYWORDS: Indium gallium arsenide, Gallium arsenide, Indium arsenide, Heterojunctions, Quantum dots, Gallium, Optical properties, Indium, Arsenic, Interfaces

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