Ms. Saraswathy Venugopal Profile

Saraswathy Venugopal

SPIE Involvement:

Author

Publications (1)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 21 August 2020 Poster + Paper

Enhanced performance of InAs/InGaAs dot-in-well heterostructure through varying capping thickness

Ajay Kumar, Saraswathy Venugopal, Debiprasad Panda, Manas Mantri, Arjun Mandal, Subhananda Chakrabarti

Proceedings Volume 11465, 114651I (2020) https://doi.org/10.1117/12.2569078

KEYWORDS: Indium gallium arsenide, Raman spectroscopy, Heterojunctions, Indium arsenide, Gallium arsenide, Quantum dots, Phonons, Optical properties, Luminescence

Read Abstract +

This study is focused on structural and optical properties of multilayer InAs/InGaAs dot-in-a-well (DWELL) heterostructure with varying capping layer thickness. Two samples A and B are considered with 2 monolayer (ML) InAs quantum dots (QDs). The top InGaAs capping layer thickness is varied from 6 to 8 nm from sample A to B, whereas the lower well thickness was kept constant at 2 nm. The ground-state peak in the photoluminescence (PL) spectra shows a blue shift with increased capping layer thickness (sample A: 1148 nm, sample B: 1140 nm). This blue shift is due to the increased well layer thickness, which leads to higher strain and shrinkage in dot size. The activation energy (Ea) is calculated from the temperature dependent PL results using the Arrhenius equation. The activation energy of sample A and B are 181 meV and 152 meV respectively. The higher activation energy leads to a reduction in dark current, which affirms that sample A would be better for the device application. Raman spectroscopy is also carried out to observe different phonon peaks in both samples. For sample B, the broadening of the GaAs transverse optic (TO) mode is higher, which may lead to increased non-radiative carrier recombination. It may also lead to reduction of carrier lifetime. Hence, sample A with lower well thickness would be useful in optoelectronic device application because of its improved optical characteristics.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years