Dr. Sebastian U. Engelmann Profile

Dr. Sebastian U. Engelmann

Research Staff Member and Manager at IBM Thomas J Watson Research Ctr

SPIE Involvement:

Conference Program Committee | Author | Editor

Publications (21)

Proceedings Article | 13 June 2022 Presentation

Etch and patterning development for 2nm node nanosheet devices

Eric Miller, Indira Seshadri, Tsung-Sheng Kang, Dominik Metzler, Joe Lee, Stuart Sieg, Sebastian Engelmann, Jeff Shearer, John Arnold, Nelson Felix

Proceedings Volume PC12056, PC120560A (2022) https://doi.org/10.1117/12.2614316

KEYWORDS: Optical lithography, Etching, Plasma etching, Plasma, Nanotechnology, Extreme ultraviolet, Line width roughness, Ions, Fin field effect transistors, Extreme ultraviolet lithography

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Proceedings Article | 25 May 2022 Presentation + Paper

Study of surface interactions for encapsulation of phase change memory materials

L. Buzi, D. Koty, M. Hopstaken, J. Bruley, L. Gignac, M. Sagianis, D. Farmer, H. Miyazoe, A. Mosden, S. Engelmann, R. Bruce

Proceedings Volume 12056, 1205609 (2022) https://doi.org/10.1117/12.2614303

KEYWORDS: Plasma, Etching, Plasma enhanced chemical vapor deposition, Oxygen, Argon, Refractive index, Hydrogen, FT-IR spectroscopy, Wet etching

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Proceedings Article | 25 May 2022 Presentation + Paper

Control of sidewall roughness formation in through-silicon via etch at non-cryogenic temperatures

John Papalia, Devi Koty, Nathan Marchack, Scott Lefevre, Qingyun Yang, Aelan Mosden, Sebastian Engelmann, Robert Bruce

Proceedings Volume 12056, 1205603 (2022) https://doi.org/10.1117/12.2614264

KEYWORDS: Etching, Polymers, Diffusion, Plasma etching, Ions, Silicon, Plasma, Semiconducting wafers, Scanning electron microscopy, Deep reactive ion etching, Reactive ion etching, Packaging

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Proceedings Article | 1 March 2021 Presentation + Paper

Effect of surface temperature on GeSbTe damage formation during plasma processing

L. Buzi, J. Papalia, H. Miyazoe, H.-Y. Cheng, M. Hopstaken, R. Bruce, S. Engelmann

Proceedings Volume 11615, 116150G (2021) https://doi.org/10.1117/12.2581706

KEYWORDS: Plasma, Etching, Chemistry, Switching, Plasma etching, Halogens, Applied physics, Thin films, Semiconductors, Profiling

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Proceedings Article | 22 February 2021 Presentation + Paper

Process trace analytics for process development

Robert Baseman, Fateh Tipu, Sebastian Englemann, John Papalia, Matthew Sagianis, Scott DeVries, Danielle Durrant, Sebastian Naczas, Vinay Pai, Shanti Pancharatnam

Proceedings Volume 11615, 116150J (2021) https://doi.org/10.1117/12.2583645

KEYWORDS: Analytics, Data processing, Sensors, Semiconducting wafers, Process control, Manufacturing, Time metrology, Statistical analysis, Semiconductor manufacturing, Metrology

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Proceedings Article | 23 March 2020 Paper

Hydrocarbon layer formation and removal studies on SiN films etched in halogen/hydrofluorocarbon plasmas

L. Buzi, J. Papalia, M. Khojasteh, H. Miyazoe, M. Hopstaken, S. Molis, R. Bruce, S. Engelmann

Proceedings Volume 11329, 113290S (2020) https://doi.org/10.1117/12.2552474

KEYWORDS: Etching, Plasmas, Argon, Silicon, Oxygen, Carbon, Reactive ion etching, Halogens, Fluorine, Plasma etching

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SPIE Journal Paper | 8 January 2019 Open Access

Special Section Guest Editorial: Challenges and Approaches to EUV-Based Patterning for High-Volume Manufacturing Applications

Sebastian Engelmann, Rich Wise, Roel Gronheid, Nelson Felix

JM3, Vol. 18, Issue 01, 011001, (January 2019) https://doi.org/10.1117/12.10.1117/1.JMM.18.1.011001

KEYWORDS: Optical lithography, Extreme ultraviolet, High volume manufacturing, Extreme ultraviolet lithography, Lithography, Photomasks, Roads, Photoresist technology, Plasma etching, Image processing

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Proceedings Article | 16 May 2018 Presentation + Paper

Localization and quantification of trace-gas fugitive emissions using a portable optical spectrometer

Eric Zhang, Chu Teng, Theodore van Kessel, Levente Klein, Ramachandran Muralidhar, Chi Xiong, Yves Martin, Jason Orcutt, Marwan Khater, Laurent Schares, Tymon Barwicz, Nathan Marchack, Swetha Kamlapurkar, Sebastian Engelmann, Gerard Wysocki, Norma Sosa, William M. Green

Proceedings Volume 10629, 106290Y (2018) https://doi.org/10.1117/12.2305174

KEYWORDS: Sensors, Spectroscopy, Methane, Optical sensors, Photodetectors, Absorption spectroscopy, Absorption, Calibration, Absorbance

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Proceedings Article | 23 February 2018 Presentation + Paper

Breaking the mold of photonic packaging

Tymon Barwicz, Ted Lichoulas, Yoichi Taira, Yves Martin, Shotaro Takenobu, Alexander Janta-Polczynski, Hidetoshi Numata, Eddie Kimbrell, Jae-Woong Nah, Bo Peng, Darrell Childers, Robert Leidy, Marwan Khater, Swetha Kamlapurkar, Elaine Cyr, Sebastian Engelmann, Paul Fortier, Nicolas Boyer

Proceedings Volume 10535, 105350R (2018) https://doi.org/10.1117/12.2290230

KEYWORDS: Packaging, Silicon photonics, Polymers, Waveguides, Interfaces, Optical alignment

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Proceedings Article | 22 February 2018 Paper

Towards co-packaging of photonics and microelectronics in existing manufacturing facilities

Alexander Janta-Polczynski, Elaine Cyr, Jerome Bougie, Alain Drouin, Richard Langlois, Darrell Childers, Shotaro Takenobu, Yoichi Taira, Ted Lichoulas, Swetha Kamlapurkar, Sebastian Engelmann, Paul Fortier, Nicolas Boyer, Tymon Barwicz

Proceedings Volume 10538, 105380B (2018) https://doi.org/10.1117/12.2291902

KEYWORDS: Photonics, Packaging, Polymers, Microelectronics, Integrated optics, Waveguides, Connectors, Polymer multimode waveguides, Singular optics, Silicon photonics

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Proceedings Article | 21 March 2017 Presentation + Paper

Reducing Line Edge Roughness in Si and SiN through plasma etch chemistry optimization for photonic waveguide applications

Nathan Marchack, Marwan Khater, Jason Orcutt, Josephine Chang, Steven Holmes, Tymon Barwicz, Swetha Kamlapurkar, William Green, Sebastian Engelmann

Proceedings Volume 10149, 101490F (2017) https://doi.org/10.1117/12.2258112

KEYWORDS: Line edge roughness, Silicon, Reactive ion etching, Waveguides, Sensor technology, Optical lithography, Silicon photonics, Waveguide sensors, Sensors, Integrated circuits, Plasma, Etching, Line width roughness, Photomasks, Plasma etching, Lithography

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Proceedings Article | 21 March 2017 Presentation + Paper

Directed self-assembly patterning strategies for phase change memory applications

Robert Bruce, Gloria Fraczak, John Papalia, HsinYu Tsai, Matt BrightSky, Hiroyuki Miyazoe, Yu Zhu, Sebastian Engelmann, Hsiang-Lan Lung, Takeshi Masuda, Koukou Suu, Chi-Chun Liu, Hao Tang, John Arnold, Nelson Felix, Chung Lam

Proceedings Volume 10149, 101490J (2017) https://doi.org/10.1117/12.2257829

KEYWORDS: Plasma etching, Etching, Chalcogenides, Atomic layer deposition, Dry etching, Directed self assembly, Reactive ion etching, Picosecond phenomena, Polymethylmethacrylate, Scanning electron microscopy, Critical dimension metrology

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Proceedings Article | 23 March 2016 Paper

Evaluation of ALE processes for patterning

J. Papalia, N. Marchack, R. Bruce, H. Miyazoe, S. Engelmann, E. Joseph

Proceedings Volume 9782, 97820H (2016) https://doi.org/10.1117/12.2219280

KEYWORDS: Etching, Chemistry, Optical lithography, Critical dimension metrology, Line edge roughness, Line width roughness, Plasma, Tin, Oxides

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SPIE Journal Paper | 25 September 2013

Pattern transfer of directed self-assembly patterns for CMOS device applications

Hsin-Yu Tsai, Hiroyuki Miyazoe, Sebastian Engelmann, Lynne Gignac, James Bucchignano, David Klaus, Christopher Breslin, Eric Joseph, Joy Cheng, Daniel Sanders, Michael Guillorn, Chi-Chun Liu

JM3, Vol. 12, Issue 04, 041305, (September 2013) https://doi.org/10.1117/12.10.1117/1.JMM.12.4.041305

KEYWORDS: Etching, Optical lithography, Photomasks, Silicon, Carbon, Polymethylmethacrylate, Plasma, Metals, Line edge roughness, Directed self assembly

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Proceedings Article | 29 March 2013 Paper

Pattern transfer of directed self-assembly (DSA) patterns for CMOS device applications

Hsin-Yu Tsai, Hiroyuki Miyazoe, Sebastian Engelmann, Sarunya Bangsaruntip, Isaac Lauer, Jim Bucchignano, Dave Klaus, Lynne Gignac, Eric Joseph, Joy Cheng, Dan Sanders, Michael Guillorn

Proceedings Volume 8685, 86850L (2013) https://doi.org/10.1117/12.2014259

KEYWORDS: Etching, Line edge roughness, Optical lithography, Silicon, Annealing, Polymethylmethacrylate, Photomasks, Electron beam lithography, Directed self assembly

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Proceedings Article | 29 March 2013 Paper

Advanced plasma etch for the 10nm node and beyond

E. Joseph, S. Engelmann, H. Miyazoe, R. Bruce, M. Nakamura, T. Suzuki, M. Hoinkis

Proceedings Volume 8685, 86850A (2013) https://doi.org/10.1117/12.2015189

KEYWORDS: Etching, Copper, Optical lithography, Plasma etching, Plasma, Silicon, Sputter deposition, Oxides, Back end of line, Argon

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Proceedings Article | 17 March 2012 Paper

Patterning of CMOS device structures for 40-80nm pitches and beyond

S. Engelmann, R. Martin, R. Bruce, H. Miyazoe, N. C. Fuller, W. Graham, E. Sikorski, M. Glodde, M. Brink, H. Tsai, J. Bucchignano, D. Klaus, E. Kratschmer, M. Guillorn

Proceedings Volume 8328, 83280B (2012) https://doi.org/10.1117/12.916447

KEYWORDS: Etching, Optical lithography, Plasma, Line edge roughness, Polymers, Silicon, Polymethylmethacrylate, Oxides, Vacuum ultraviolet, Lithography

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Proceedings Article | 17 March 2012 Paper

The effects of plasma exposure on low-k dielectric materials

J. Shohet, H. Ren, M. Nichols, H. Sinha, W. Lu, K. Mavrakakis, Q. Lin, N. Russell, M. Tomoyasu, G. Antonelli, S. Engelmann, N. Fuller, V. Ryan, Y. Nishi

Proceedings Volume 8328, 83280I (2012) https://doi.org/10.1117/12.917967

KEYWORDS: Plasma, Dielectrics, Ions, Vacuum ultraviolet, Ultraviolet radiation, Synchrotrons, Silicon, Nitrogen, Oxygen, Plasma systems

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Proceedings Article | 16 April 2011 Paper

Systematic studies on reactive ion etch-induced deformations of organic underlayers

Martin Glodde, Sebastian Engelmann, Michael Guillorn, Sivananda Kanakasabapathy, Erin Mclellan, Chiew-Seng Koay, Yunpeng Yin, Muthumanickam Sankarapandian, John Arnold, Karen Petrillo, Markus Brink, Hiroyuki Miyazoe, E. Anuja de Silva, Hakeem Yusuff, Kwang-sub Yoon, Yayi Wei, Chung-hsi Wu, P. Rao Varanasi

Proceedings Volume 7972, 797216 (2011) https://doi.org/10.1117/12.879442

KEYWORDS: Reactive ion etching, Etching, Ions, Plasma, Hydrogen, Gases, Plasma etching, Silicon, Oxides, Electron beam lithography

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Proceedings Article | 30 March 2010 Paper

Fabrication of dual damascene BEOL structures using a multilevel multiple exposure (MLME) scheme, part 2: RIE-based pattern transfer and completion of dual damascene process yielding an electrically functional via chain

Stefan Harrer, John Arnold, Dario Goldfarb, Steven Holmes, Rex Chen, Cherry Tang, Mark Slezak, Nicolette Fender, Ronald Della Guardia, Eric Joseph, Sebastian Engelmann, Shyng-Tsong Chen, Dave Horak, Yunpeng Yin, Rao Varanasi, Matthew Colburn

Proceedings Volume 7639, 763919 (2010) https://doi.org/10.1117/12.846593

KEYWORDS: Back end of line, Dielectrics, Etching, Lithography, Reactive ion etching, Photoresist materials, Optical lithography, Semiconducting wafers, Copper, Polishing

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A novel back-end-of-line (BEOL) patterning and integration process termed Multi-Level Multiple Exposure (MLME) technique is herein introduced. The MLME technique simplifies BEOL dual damascene (DD) integration while simultaneously being applicable to all BEOL levels. It offers a patterning resolution reaching into the sub-100nm region and improves semiconductor manufacturing cost and throughput. MLME employs a dual-layer imaging stack (via + trench resists) cast onto a customized etch transfer multilayer stack. This process implements a strict litho-litho-etch sequence for transferring the trench- and via-patterns into the dielectric layer. Under the MLME scheme, two imaging steps (i.e. via- and trench-level patterning) are executed consecutively followed by a dry etch process that transfers the lithographically-formed patterns into the customized etch transfer multilayer stack and further into the dielectric layer. The MLME integration scheme not only decreases the number of overall process steps for the full DD BEOL process but also eliminates several inter-tool wafer exchange sequences as performed in a conventional litho-etch-litho-etch process flow. All MLME process steps were demonstrated i.e. combined 193nm-dry dual-resist layer MLME via- and trench-lithography, full pattern transfer of via- and trench-patterns into the dielectric layer using reactive ion etching (RIE), as well as electroplating and polishing of the DD patterns. This paper provides a detailed description of both post-lithography steps of the DD process for a DD BEOL structure, i.e. (i) the RIE-pattern transfer process with the customized multilayer stack, and (ii) the metallization process completing the DD process for one BEOL layer. Furthermore, the integration capabilities of the MLME technique were demonstrated and characterized by generating an electrically functional via-chain connecting two neighboring BEOL layers fabricated by subsequently applying the MLME approach to both layers. An exhaustive description and evaluation of MLME lithographic patterning is given in an accompanying paper.

Proceedings Article | 26 March 2010 Paper

Fabrication of dual damascene BEOL structures using a multilevel multiple exposure (MLME) scheme, part 1: lithographic patterning

Dario Goldfarb, Stefan Harrer, John Arnold, Steven Holmes, Rex Chen, Cherry Tang, Nicolette Fender, Mark Slezak, Ronald Della Guardia, Eric Joseph, Sebastian Engelmann, Roa Varanasi, Matthew Colburn

Proceedings Volume 7639, 76390I (2010) https://doi.org/10.1117/12.846443

KEYWORDS: Optical lithography, Einsteinium, Back end of line, Etching, Dielectrics, Semiconducting wafers, Lithography, Photoresist materials, Nanoimprint lithography, Reactive ion etching

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