Optical frequency combs have become essential components in a wide variety of technologies, with semiconductor laser diodes becoming increasingly relevant due to their seamless integration with photonic circuitry. We study the high temperature operation of a single-mode, passively mode-locked ridge waveguide laser based on InAs/InP quantum dashes designed for C-band operation. We present experimental evidence of stable optical frequency comb generation at temperatures up to 85°C, with peak widths of the repetition rate below 10 MHz. When deployed in high temperature environments, these devices can offer power savings of up to 80%.
Using a model developed in Crosslight PICS3D, we have compared simulated gain and device performance for InAs/InP quantum dash ridge waveguide lasers with experimental data from fabricated devices. We investigated the change in device behaviour as the energy spectrum of the dashes is varied and inhomogeneous broadening is changed to represent a distribution of dash sizes and composition. We observed a distinct asymmetry of the dash layer occupation due to inefficient thermionic emission hindering hole transport across the quantum dash layer stack. We have quantified how this effect can be utilized to achieve higher threshold current temperature stability.
We investigate the evolution of current spreading, injection, and radiative differential efficiencies in InAs/InP quantum dash and InGaAsP quantum well lasers operating at 1550 nm under varying temperatures up to 80°C. Simulations in Crosslight PICS3D are compared to fabricated devices. The injection efficiency remains largely unaffected by temperature, with less efficient radiative recombination and current spreading accounting for the temperature sensitivity of device performance. A temperature-dependent 10% to 14% difference in the current spreading efficiency emerges as the primary cause of lower simulated efficiencies in these quantum dash lasers compared to the quantum wells.
The emission wavelength of self-assembled quantum dashes can be controlled by their height. Uncapped InAs/InGaAsP/InP quantum dashes are found to have two distinct heights, which we have measured with atomic force microscopy and denoted the plateau and the peak heights. These heights range from 0.50 nm to 2.35 nm. Under the same growth conditions, for increasing uncapped quantum dash heights we observe an increase in the photoluminescence peak emission wavelength from approximately 1535 to 1543 nm for the capped layers. A growth temperature of 520°C is determined to achieve uniform height distribution for 1550 nm emission using chemical beam epitaxy.
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