Dr. Sebastian W. Schmidt Profile

Dr. Sebastian W. Schmidt

at nanotools GmbH

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Publications (5)

Proceedings Article | 19 March 2015 Paper

Development of a comprehensive metrology platform dedicated to dimensional measurements of CD atomic force microscopy tips

Johann Foucher, Sebastian Schmidt, Aurelien Labrosse, Alexandre Dervillé, Sandra Bos, Sebastian Schade, Bernd Irmer

Proceedings Volume 9424, 94240S (2015) https://doi.org/10.1117/12.2085977

KEYWORDS: Atomic force microscopy, Scanning electron microscopy, Image analysis, Silicon, Metrology, Critical dimension metrology, Neck, Algorithm development, Process control, Image processing

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Proceedings Article | 17 May 2013 Paper

Controlled fabrication of advanced functional structures on the nanoscale by means of electron beam-induced processing

Sebastian Schmidt, Johann Foucher, Christian Penzkofer, Bernd Irmer

Proceedings Volume 8763, 876316 (2013) https://doi.org/10.1117/12.2017430

KEYWORDS: Atomic force microscopy, Nanolithography, Microelectromechanical systems, Nanoelectromechanical systems, Californium, Silicon, Inspection, Scanning electron microscopy, Electron beams, Nanostructures

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The controlled deposition of materials by means of electron beam induced processing (EBIP) is a well-established patterning method, which allows for the fabrication of nanostructures with high spatial resolution in a highly precise and flexible manner. Applications range from the production of ultrathin coatings and nanoscaled conductivity probes to super sharp atomic force microscopy (AFM) tips, to name but a few. The latter are typically deposited at the very end of silicon or silicon-nitride tips, which are fabricated with MEMS technologies. EBIP therefore provides the unique ability to converge MEMS to NEMS in a highly controllable way, and thus represents an encouraging opportunity to refine or even develop further MEMS-based features with advanced functionality and applicability. In this paper, we will present and discuss exemplary application solutions, where we successfully applied EBIP to overcome dimensional and/or functional limitations. We therefore show the fabrication stability and accuracy of “T-like-shaped” AFM tips made from high density, diamond-like carbon (HDC/DLC) for the investigation of undercut structures on the base of CDR30-EBD tips. Such aggressive CD-AFM tip dimensions are mandatory to fulfill ITRS requirements for the inspection of sub-28nm nodes, but are unattainable with state-of-art Si-based MEMS technologies today. In addition to that, we demonstrate the ability of EBIP to realize field enhancement in sensor applications and the fabrication of cold field emitters (CFE). For example: applying the EBIP approach allows for the production of CFEs, which are characterized by considerably enhanced imaging resolution compared to standard thermal field emitters and stable operation properties at room temperature without the need for periodic cathode flashing – unlike typical CFEs. Based on these examples, we outline the strong capabilities of the EBIP approach to further downscale functional structures in order to meet future demands in the semiconductor industry, and demonstrate its promising potential for the development of advanced functionalities in the field of NEMS.

Proceedings Article | 10 April 2013 Paper

Manufacturing and advanced characterization of sub-25nm diameter CD-AFM probes with sub-10nm tip edges radius

Johann Foucher, Pavel Filippov, Christian Penzkofer, Bernd Irmer, Sebastian Schmidt

Proceedings Volume 8681, 86811I (2013) https://doi.org/10.1117/12.2011451

KEYWORDS: Silicon, Silica, Atomic force microscopy, Inspection, Lithography, Manufacturing, Semiconductors, Electron beams, Critical dimension metrology, Directed self assembly

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Proceedings Article | 6 April 2012 Paper

Overcoming silicon limitations: new 3D-AFM carbon tips with constantly high-resolution for sub-28nm node semiconductor requirements

Johann Foucher, Sebastian Schmidt, Christian Penzkofer, Bernd Irmer

Proceedings Volume 8324, 832432 (2012) https://doi.org/10.1117/12.916438

KEYWORDS: Atomic force microscopy, Silicon, Scanning electron microscopy, Carbon, Semiconductors, Critical dimension metrology, Silicon carbide, Electron beams, Manufacturing, Process control

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Proceedings Article | 5 April 2012 Paper

Nanoemitter: ultra-high-resolution electron source for CD metrology

Sebastian Schmidt, Christian Penzkofer, Bernd Irmer

Proceedings Volume 8324, 83242E (2012) https://doi.org/10.1117/12.917629

KEYWORDS: Neon, Californium, Electron beams, Manufacturing, Scanning electron microscopy, Metals, Critical dimension metrology, Carbon, Oxides, Carbon nanotubes

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