Mr. Seo-Min Kim Profile

Seo-Min Kim

Senior MTS at SK Hynix Inc

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Author

Publications (21)

Proceedings Article | 27 March 2017 Paper

Factors analysis on the physical properties of the low-temperature SOC of memory cell characteristics

Doyoung Kwak, Jaeyeol Kim, Jihoon Park, Jeonqsu Park, Sungkoo Lee, Seomin Kim, Taewoo Jung, Hyeongsoo Kim

Proceedings Volume 10146, 1014627 (2017) https://doi.org/10.1117/12.2257983

KEYWORDS: Etching, System on a chip, Process control, Factor analysis, Semiconductors, Tolerancing, Semiconducting wafers, Photoresist processing, Optical lithography, Plasma, Inspection

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Proceedings Article | 7 April 2015 Paper

Understanding of stochastic noise

Seo-Min Kim, Chang-Moon Lim, Mi-Rim Jung, Young-Sik Kim, Won-Taik Kwon, Chang-Nam Ahn, Kyu-Tae Sun, Anita Fumar-Pici, Alek Chen

Proceedings Volume 9422, 94220M (2015) https://doi.org/10.1117/12.2087559

KEYWORDS: Stochastic processes, Photomasks, Absorption, Critical dimension metrology, Extreme ultraviolet, Immersion lithography, Lithography, Photoresist processing, Line width roughness, Particles

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Proceedings Article | 6 April 2015 Paper

EUV mask particle adders during scanner exposure

Yoonsuk Hyun, Jinsoo Kim, Kyuyoung Kim, Sunyoung Koo, SeoMin Kim, Youngsik Kim, Changmoon Lim, Nohjung Kwak

Proceedings Volume 9422, 94221U (2015) https://doi.org/10.1117/12.2085626

KEYWORDS: Photomasks, Particles, Scanners, Extreme ultraviolet lithography, Semiconducting wafers, Pellicles, Extreme ultraviolet, Inspection, Reticles, Scanning electron microscopy

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Proceedings Article | 16 March 2015 Paper

EUV contact holes and pillars patterning

Sarohan Park, Danilo De Simone , Zheng Tao, Geert Vandenberghe, Yoonsuk Hyun, Seo-Min Kim, Chang-Moon Lim

Proceedings Volume 9422, 94220S (2015) https://doi.org/10.1117/12.2085920

KEYWORDS: Optical lithography, Photomasks, Photoresist processing, Extreme ultraviolet, Extreme ultraviolet lithography, Nanoimprint lithography, Electroluminescence, Image processing, Stochastic processes, Scanners

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Proceedings Article | 17 April 2014 Paper

EUV overlay strategy for improving MMO

Byoung-Hoon Lee, Inhwan Lee, Yoonsuk Hyun, SeoMin Kim, Chang-Moon Lim, Myoung Soo Kim, Sung-ki Park

Proceedings Volume 9048, 90480R (2014) https://doi.org/10.1117/12.2048283

KEYWORDS: Extreme ultraviolet, Photomasks, Semiconducting wafers, Overlay metrology, Extreme ultraviolet lithography, EUV optics, Manufacturing, Lithography, Reflectivity, Interferometers

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Proceedings Article | 17 April 2014 Paper

EUV stochastic noise analysis and LCDU mitigation by etching on dense contact-hole array patterns

Seo Min Kim, Sunyoung Koo, Jun-Taek Park, Chang-Moon Lim, Myoungsoo Kim, Chang-Nam Ahn, Anita Fumar-Pici, Alek Chen

Proceedings Volume 9048, 90480A (2014) https://doi.org/10.1117/12.2048282

KEYWORDS: Etching, Liquid phase epitaxy, Stochastic processes, Photomasks, Metrology, Critical dimension metrology, Printing, Scanning electron microscopy, Extreme ultraviolet, Error analysis

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Proceedings Article | 2 April 2014 Paper

Investigation on reticle heating effect induced overlay error

Mijung Lim, Geunhak Kim, SeoMin Kim, Byounghoon Lee, Seokkyun Kim, Chang-moon Lim, Myoungsoo Kim, Sungki Park

Proceedings Volume 9050, 905014 (2014) https://doi.org/10.1117/12.2048281

KEYWORDS: Reticles, Semiconducting wafers, Transmittance, Overlay metrology, Photomasks, Optical parametric oscillators, Scanners, Semiconductors, HVAC controls, Distortion

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Proceedings Article | 1 April 2013 Paper

EUV mask defect analysis from mask to wafer printing

Yoonsuk Hyun, Kangjoon Seo, Kyuyoung Kim, Inhwan Lee, Byounghoon Lee, Sunyoung Koo, Jongsu Lee, Sukkyun Kim, Seomin Kim, Myoungsoo Kim, Hyosang Kang

Proceedings Volume 8679, 86790G (2013) https://doi.org/10.1117/12.2010091

KEYWORDS: Photomasks, Inspection, Semiconducting wafers, Particles, Extreme ultraviolet, Wafer inspection, Scanners, Reticles, Extreme ultraviolet lithography, Defect inspection

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Proceedings Article | 26 March 2007 Paper

Issues and challenges of double patterning lithography in DRAM

Seo-Min Kim, Sun-Young Koo, Jae-Seung Choi, Young-Sun Hwang, Jung-Woo Park, Eung-Kil Kang, Chang-Moon Lim, Seung-Chan Moon, Jin-Woong Kim

Proceedings Volume 6520, 65200H (2007) https://doi.org/10.1117/12.712035

KEYWORDS: Double patterning technology, Lithography, Photomasks, Optical lithography, Etching, Neodymium, Composites, 193nm lithography, Scanning electron microscopy, Photomicroscopy

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Proceedings Article | 20 March 2006 Paper

Heterogeneous diffusion model for simulation of resist process

Chang Moon Lim, Jun Taek Park, Seo Min Kim, Hyeong Soo Kim, Seung Chan Moon

Proceedings Volume 6154, 61542S (2006) https://doi.org/10.1117/12.656923

KEYWORDS: Diffusion, Lithography, Photoresist processing, Performance modeling, Optical lithography, Photomicroscopy, Image processing, Optical proximity correction, Process modeling, Critical dimension metrology

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Proceedings Article | 15 March 2006 Paper

Positive and negative tone double patterning lithography for 50-nm flash memory

Chang-Moon Lim, Seo-Min Kim, Young-Sun Hwang, Jae-Seung Choi, Keun-Do Ban, Sung-Yoon Cho, Jin-Ki Jung, Eung-Kil Kang, Hee-Youl Lim, Hyeong-Soo Kim, Seung-Chan Moon

Proceedings Volume 6154, 615410 (2006) https://doi.org/10.1117/12.656187

KEYWORDS: Double patterning technology, Lithography, Photomasks, Optical lithography, Neodymium, Etching, Critical dimension metrology, Overlay metrology, Photoresist processing, Semiconducting wafers

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Proceedings Article | 12 May 2005 Paper

Study on the shoreline for water immersion ArF lithography

Chang-Moon Lim, Tae-Seung Eom, Seo-Min Kim, Cheolkyu Bok, Won-Kwang Ma, Gyu-Dong Park, Seung-Chan Moon, Jin-Woong Kim

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.600455

KEYWORDS: Lithography, Immersion lithography, Lithographic illumination, Semiconducting wafers, Diffraction, Critical dimension metrology, Reliability, Refractive index, Scanning electron microscopy, Contamination

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Proceedings Article | 4 May 2005 Paper

0.31k1 ArF lithography for 70-nm DRAM

Cheolkyu Bok, Ki-Lyoung Lee, Jun-Taek Park, Young-Sun Hwang, Tae-Seung Eom, Seo-Min Kim, Geunsu Lee, Jae-Chang Jung, Chang-Moon Lim, Seung-Chan Moon, Jin-Woong Kim

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.599348

KEYWORDS: Lithography, Photoresist processing, Photomasks, Optical proximity correction, Lithographic illumination, Resolution enhancement technologies, Electroluminescence, Image processing, Etching, Semiconducting wafers

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Proceedings Article | 4 May 2005 Paper

Top antireflective coating process for immersion lithography

Jae Chang Jung, Sung Koo Lee, Keun Do Ban, Seo Min Kim, Cheolkyu Bok, Chang Moon Lim, Seung Chan Moon

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.599280

KEYWORDS: Coating, Lithography, Particles, Immersion lithography, Semiconducting wafers, Antireflective coatings, Optical lithography, Light sources, Resolution enhancement technologies, Photoresist processing

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Proceedings Article | 28 May 2004 Paper

Diffraction analysis of customized illumination technique

Chang-Moon Lim, Seo-Min Kim, Tae-Seung Eom, Seung Chan Moon, Ki Shin

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.536357

KEYWORDS: Diffraction, Lithographic illumination, Photomasks, Lithography, Image acquisition, Fourier transforms, Semiconducting wafers, Lead, Spectrum analysis, Mathematics

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Proceedings Article | 26 June 2003 Paper

Comparative study of chromeless and attenuated phase-shift mask for 0.3-k1 ArF lithography of DRAM

Tae-Seung Eom, Chang Lim, Seo-Min Kim, Hee-Bom Kim, Se-Young Oh, Won-Kwang Ma, Seung-Chan Moon, Ki Shin

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485452

KEYWORDS: Photomasks, Lithography, Transmittance, Phase shifts, Diffraction, Quartz, Mask making, Etching, Optical lithography, Critical dimension metrology

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Proceedings Article | 30 July 2002 Paper

Double-exposure strategy using OPC and simulation and the performance on wafer with sub-0.10-um design rule in ArF lithography

Se-Young Oh, Wan-Ho Kim, Hyoung-Soon Yune, Hee-Bom Kim, Seo-Min Kim, Chang-Nam Ahn, Ki-Soo Shin

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474541

KEYWORDS: Optical proximity correction, Lithography, Semiconducting wafers, Double patterning technology, Optical lithography, Reticles, Device simulation, Electroluminescence, Image processing, Lithographic illumination

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As the pattern size becomes smaller, double or multi exposure is required unless the epochal solutions for overcoming the limits of present lithography system do appear or are discovered. ArF DET (double exposure technology) strategy based on manual OPC with in-house simulation tool, HOST (Hynix OPC simulation tool), is suggested as a possible exposure method to extend the limitation of current lithography. HOST requires no additional procedures and separate layout optimizations of each region in terms of OPC are enough. Furthermore, it is possible to change illumination condition of each region and the overlap between two regions with ease. The results from the simulation are pattern size and profile of each condition according to the defous and misregistration. 0.63 NA ArF Scanner and Clariant resist is used for wafer process. The resist was coated on Clariant organic BARC using 0.24 um thickness. Dipole illumination for cell region and annular illumination for peripheral region are used. Cell region contains 0.20 um pitch duty pattern and peripheral region 0.24 um pitch duty pattern. The boundary of two regions is investigated in view of validity of stitching itself. The layout of reticles used as the cell and peripheral region are optimized by OPC, respectively and then, additional OPC was treated to the boundary, i.e., stitching area to compensate the cross term of the boundary caused by separate and independent optimization with OPC in the cell and the peripheral regime. The final patterns were acquired by defining the cell at first and the peripheral region secondly with different defocus and registration in respect to the cell. The actual data on wafer are presented according to defocus and one region's overlay offset relatively to the other region. And the outstanding matching between simulation results and in-line data are shown. Lithography process window for stable patterning is thoroughly investigated in view of depth of focus, energy latitude, registration between two stitched regions and stitching itself in the boundary. It is found from the experiment that total DOF of DE (double exposure) is 0.5 um and the total EL of DE is 10.0% in this paper. At present, it is very difficult to ensure stable process margin for the sub-0.10 um patterning. But there is a promising technology called stitching with special optimization. In addition, this technology will be nominated as an eternal candidate process whenever our lithography is in the adversity at the limits of his days.

Proceedings Article | 5 September 2001 Paper

Quantitative analysis of mask error effect on wafer CD variation in ArF lithography

Sang-Jin Kim, Sang-Sool Koo, Seo-Min Kim, Chang-Nam Ahn, Young-Mog Ham, Ki-Soo Shin

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438344

KEYWORDS: Critical dimension metrology, Semiconducting wafers, Photomasks, Error analysis, Lithography, Tolerancing, Photoresist processing, Quantitative analysis, Semiconductors, Phase shifting

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Proceedings Article | 22 January 2001 Paper

Sub-120-nm technology compatibility of attenuated phase-shift mask in KrF and ArF lithography

Young-Mog Ham, Seo-Min Kim, Sang-Jin Kim, Sang-Man Bae, Young-Deuk Kim, Ki-Ho Baik

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410712

KEYWORDS: Lithography, Photomasks, Critical dimension metrology, Electroluminescence, Mask making, Optical proximity correction, Semiconducting wafers, Photoresist processing, Diffraction, Optical lithography

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Proceedings Article | 26 July 1999 Paper

Reduction of isolated-dense bias by optimization off-axis illumination for 150-nm lithography using KrF

Seok-Kyun Kim, Chang-Nam Ahn, Seo-Min Kim, Young-Mog Ham, Ki-Ho Baik

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354384

KEYWORDS: Lithography, Lithographic illumination, Optical proximity correction, Diffraction, Photomasks, Optical lithography, Semiconductors, Phase shifts, Electronics, Phase shifting

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Proceedings Article | 27 December 1996 Paper

Application of deep-UV attenuated PSM to 0.2-um contact hole patterning technology

Il-Ho Lee, Seo-Min Kim, Chang-Nam Ahn, Ki-Ho Baik

Proceedings Volume 2884, (1996) https://doi.org/10.1117/12.262823

KEYWORDS: Deep ultraviolet, Photomasks, Semiconducting wafers, Transmittance, Printing, Scanning electron microscopy, Optical lithography, Lithography, Reticles, Laser systems engineering

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Showing 5 of 21 publications

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