Mr. Sergey Oshemkov Profile

Sergey Oshemkov

Senior Researcher at Carl Zeiss SMS Ltd

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Author

Publications (7)

SPIE Journal Paper | 11 September 2015

Critical dimension control using ultrashort laser for improving wafer critical dimension uniformity

Dan Avizemer, Ofir Sharoni, Sergey Oshemkov, Avi Cohen, Asaf Dayan, Ranjan Khurana, Dave Kewley

JM3, Vol. 14, Issue 03, 033510, (September 2015) https://doi.org/10.1117/12.10.1117/1.JMM.14.3.033510

KEYWORDS: Semiconducting wafers, Photomasks, Critical dimension metrology, Quartz, Pulsed laser operation, Signal attenuation, Beam controllers, Deep ultraviolet, Metrology, Process control

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Proceedings Article | 15 February 2008 Paper

Ultrafast laser induced controllable jet in liquid

Sergey Oshemkov, Lev Dvorkin, Vladimir Dmitriev

Proceedings Volume 6881, 68811D (2008) https://doi.org/10.1117/12.763531

KEYWORDS: Liquids, Pulsed laser operation, Cavitation, Ultrafast lasers, Plasma, Glasses, Laser energy, Femtosecond phenomena, Laser applications, Ultrafast phenomena

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Proceedings Article | 3 May 2007 Paper

The effect of intra-field CD uniformity control (CDC) on mask birefringence

Guy Ben-Zvi, Eitan Zait, Vladimir Krugliakov, Vladimir Dmitriev, Gidi Gottlieb, Sergey Oshemkov

Proceedings Volume 6533, 65330G (2007) https://doi.org/10.1117/12.736965

KEYWORDS: Photomasks, Signal attenuation, Semiconducting wafers, Birefringence, Polarization, Image processing, Critical dimension metrology, Chemical elements, Scanners, Process control

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Proceedings Article | 20 May 2006 Paper

Irradiation resistance of intravolume shading elements embedded in photomasks used for CD uniformity control by local intra-field transmission attenuation

Eitan Zait, Guy Ben-Zvi, Vladimir Dmitriev, Sergey Oshemkov, Rainer Pforr, Mario Hennig

Proceedings Volume 6283, 62830E (2006) https://doi.org/10.1117/12.681741

KEYWORDS: Photomasks, Critical dimension metrology, Deep ultraviolet, Semiconducting wafers, Signal attenuation, Resistance, Excimer lasers, Glasses, Manufacturing, Scanners

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Intra-field CD variation is, besides OPC errors, a main contributor to the total CD variation budget in IC manufacturing. It is caused mainly by mask CD errors. In advanced memory device manufacturing the minimum features are close to the resolution limit resulting in large mask error enhancement factors hence large intra-field CD variations. Consequently tight CD Control (CDC) of the mask features is required, which results in increasing significantly the cost of mask and hence the litho process costs. Alternatively there is a search for such techniques (1) which will allow improving the intrafield CD control for a given moderate mask and scanner imaging performance. Currently a new technique (2) has been proposed which is based on correcting the printed CD by applying shading elements generated in the substrate bulk of the mask by ultrashort pulsed laser exposure. The blank transmittance across a feature is controlled by changing the density of light scattering pixels. The technique has been demonstrated to be very successful in correcting intra-field CD variations caused by the mask and the projection system (2). A key application criterion of this technique in device manufacturing is the stability of the absorbing pixels against DUV light irradiation being applied during mask projection in scanners. This paper describes the procedures and results of such an investigation. To do it with acceptable effort a special experimental setup has been chosen allowing an evaluation within reasonable time. A 193nm excimer laser with pulse duration of 25 ns has been used for blank irradiation. Accumulated dose equivalent to 100,000 300 mm wafer exposures has been applied to Half Tone PSM mask areas with and without CDC shadowing elements. This allows the discrimination of effects appearing in treated and untreated glass regions. Several intensities have been investigated to define an acceptable threshold intensity to avoid glass compaction or generation of color centers in the glass. The impact of the irradiation on the mask transmittance of both areas has been studied by measurements of the printed CD on wafer using a wafer scanner before and after DUV irradiation.

Proceedings Article | 20 May 2006 Paper

In-field CD uniformity control by altering transmission distribution of the photomask using ultra-fast pulsed laser technology

Yasutaka Morikawa, Takanori Sutou, Yuichi Inazuki, Takashi Adachi, Yuuichi Yoshida, Kouichirou Kojima, Shiho Sasaki, Hiroshi Mohri, Naoya Hayashi, Vladimir Dmitriev, Sergey Oshemkov, Eitan Zait, Guy Ben-Zvi

Proceedings Volume 6283, 62831Y (2006) https://doi.org/10.1117/12.681762

KEYWORDS: Semiconducting wafers, Photomasks, Signal attenuation, Critical dimension metrology, Binary data, Ultrafast phenomena, Laser applications, Laser scattering, Quartz, Scattering

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Proceedings Article | 24 March 2006 Paper

CD variations correction by local transmission control of photomasks done with a novel laser-based process

Eitan Zait, Vladimir Dmitriev, Sergey Oshemkov, Guy Ben-Zvi, Dany Michaelis

Proceedings Volume 6152, 615225 (2006) https://doi.org/10.1117/12.656337

KEYWORDS: Photomasks, Critical dimension metrology, Inspection, Semiconducting wafers, Quartz, Deep ultraviolet, Signal attenuation, Optical components, Laser scattering, Pulsed laser operation

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As IC feature sizes become smaller and smaller, requirements for Critical Dimension (CD) variations control have become a critical issue. A new process for the control and correction of intra-field CD variations (Critical Dimension Control or CDC) was applied and it's influence on defects detection and photo-masks inspection capabilities at different modes of inspection was investigated. CD Control (CDC) of the photomask is a process in which Deep UV transmittance is selectively altered by patterns of small partially scattering shading elements (Shade in Element^Tm) inside the quartz. The shading elements are formed by a process of shooting an ultrafast laser beam focused inside the mask substrate, resulting in localized intra-volume breakdown inside the quartz which creates local pixels of modified index of refraction (delta n). An array of such pixels with constant density constitutes one shading element. Process patterns are predetermined according to a CD variations map which may be supplied from wafer CD SEM, Optical CD or mask aerial imaging simulation tool (AIMS). Thus by changing local photomask transmission levels, it is possible to correct for the CD variations inside the field. Attenuation level, or optical density of the shading elements depends on the laser pulse energy, distance between pixels, number of layers and the size of the shading element itself. Since photomask transmittance is being changed, qualification of the impact of the transmittance changes on the defect detection and analysis capabilities are required. In this study, the principles of patterning of scattering elements inside transparent media by focusing of ultra-short laser pulses were introduced and explained. Analysis of the effects to both mask and wafer due to the CDC process was verified by full printing process applied to wafers, and by aerial imaging simulation tool. More tests for CDC required also tests by automatic reticle inspection tool to be production-worthy for the 65nm node and beyond.

Proceedings Article | 20 August 2004 Paper

Photomask clear defects repair using ultrafast laser technology

Guy Ben-Zvi, Nikolay Guletsky, Vladimir Dmitriev, Sergey Oshemkov, Eitan Zait

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557733

KEYWORDS: Photomasks, Transmittance, Optical components, Ultrafast lasers, Quartz, Laser applications, Pulsed laser operation, Laser damage threshold, Absorbance, Laser energy

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Showing 5 of 7 publications

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