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Sergey Olegovich Usov
at Ioffe Institute
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Publications (1)
Proceedings Article | 25 April 2008 Paper
Energy characteristics of excitons in InGaN/GaN heterostructures
S. Usov, A. Tsatsul'nikov, W. Lundin, A. Sakharov, E. Zavarin, M. Sinitsyn, N. Ledentsov
Proceedings Volume 6995, 699515 (2008) https://doi.org/10.1117/12.780789
KEYWORDS: Indium gallium nitride, Excitons, Gallium nitride, Indium, Luminescence, Heterojunctions, Light emitting diodes, Quantum wells, Optical properties, Ultraviolet radiation
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