The processes of correcting the optical characteristics of multilayer interference filters and heterojunctions obtained by liquid epitaxy on the base of In4Se3, In4(Se3)1-x(Te3)x and CdSb crystals were studied by laser modification of the film structure. The conditions for optimization of the properties of the created elements for use in the infrared range by laser action are determined.
Epitaxial layers and complex heterostructures on the base of the CdTe and Cd1-xMnxTe crystals were obtained by pulsed laser irradiation both in their transparency and absorption regions. Structural perfection of the laser-epitaxial layers, transition regions and distribution of the Te and Cd inclusions in the area of the laser action were studied. Analysis of the U-V and C-V characteristics of the obtained structures indicates a decrease in influence of surface states at the hetero-boundaries as a result of laser treatment in optimal mode, and also a reduction of reverse dark current and loss current. The spectral characteristics of the laser-epitaxial structures on the base of CdTe and Cd1-xMnxTe show, that they are promising materials for X- and gamma-radiation detectors.
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