Dr. Shane R. Johnson Profile

Dr. Shane R. Johnson

Research Scientist at Arizona State Univ

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Publications (14)

Proceedings Article | 26 January 2018 Paper

Optical quality in strain-balanced InAs/InAsSb superlattices grown with and without Bi surfactant

Preston Webster, Stephen Schaefer, Elizabeth Steenbergen, Shane Johnson

Proceedings Volume 10540, 105401E (2018) https://doi.org/10.1117/12.2290860

KEYWORDS: Bismuth, Superlattices, Molecular beam epitaxy

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Proceedings Article | 7 March 2016 Paper

Microscopic modelling of opto-electronic properties of dilute bismide materials for the mid-IR

J. Hader, J. Moloney, S. Johnson, S. Koch, O. Rubel, S. Badescu

Proceedings Volume 9767, 976709 (2016) https://doi.org/10.1117/12.2213310

KEYWORDS: Data modeling, Mid-IR, Instrument modeling, Modeling, Optoelectronics, Absorption, Heterojunctions, Integrated optics, Quantum wells, Bismuth, Indium arsenide, Luminescence

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Proceedings Article | 31 May 2012 Paper

InAs/InAsSb Type-II superlattice: a promising material for mid-wavelength and long-wavelength infrared applications

W. Hank Dettlaff, Zhaoyu He, Yong-Hang Zhang, Xiao-Meng Shen, Michael DiNezza, Shane Johnson, David Smith, Ding Ding, Preston Webster, Jin Fan, Elizabeth Steenbergen, Jing-Jing Li, Zhiyuan Lin, Ha Sul Kim, Oray Cellek, Hua Li, Qiang Zhang, Shi Liu

Proceedings Volume 8353, 83533F (2012) https://doi.org/10.1117/12.925076

KEYWORDS: Long wavelength infrared, Mid-IR, Photodetectors, Superlattices, Infrared radiation, Stereolithography, Infrared photography, Luminescence, Antimony, Gallium antimonide

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Proceedings Article | 21 February 2012 Paper

Optimal optical designs for planar GaAs single-junction solar cells with textured and reflective surfaces

Shane Johnson, Yong-Hang Zhang, Ding Ding, Shi Liu

Proceedings Volume 8256, 82560M (2012) https://doi.org/10.1117/12.909841

KEYWORDS: Solar cells, Gallium arsenide, Reflectivity, Optical design, Solar energy, Sun, Absorption, Energy conversion efficiency, Light scattering, Semiconductors

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Proceedings Article | 12 February 2010 Paper

Improved performance of GaAsSb/GaAs SQW lasers

S.-Q. Yu, S. Johnson, D. Ding, N. Hossain, Y.-H. Zhang, S. Sweeney, S. R. Jin

Proceedings Volume 7616, 761608 (2010) https://doi.org/10.1117/12.842253

KEYWORDS: Gallium arsenide, Quantum wells, Vertical cavity surface emitting lasers, Temperature metrology, Semiconductor lasers, Internal quantum efficiency, Manufacturing, Semiconducting wafers, Measurement devices, Quantum efficiency

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Proceedings Article | 7 February 2009 Paper

Hole confinement in quantum islands in Ga(AsSb)/GaAs/(AlGa)As heterostructures

A. Thränhardt, C. Bückers, W. Rühle, C. Lange, I. Nemeth, S. Johnson, P. Klar, Y.-H. Zhang, K. Hantke, J.-B. Wang, M. Schwalm, S. Koch, K. Volz, W. Stolz, S. Horst, S. Chatterjee

Proceedings Volume 7214, 72141A (2009) https://doi.org/10.1117/12.808364

KEYWORDS: Gallium arsenide, Antimony, Transmission electron microscopy, Luminescence, Heterojunctions, Quantum wells, Phonons, Spectroscopy, Aluminum, Gallium

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Proceedings Article | 15 January 2008 Paper

Determination of spontaneous emission quantum efficiency in InGaAs/GaAs quantum well structures

Shane Johnson, Jiang-Bo Wang, Yong-Hang Zhang, Ding Ding, Shui-Qing Yu

Proceedings Volume 6841, 68410D (2008) https://doi.org/10.1117/12.759592

KEYWORDS: Quantum wells, Quantum efficiency, Temperature metrology, Indium gallium arsenide, Internal quantum efficiency, Solids, Luminescence, Molecular beam epitaxy, Absorption, Gallium arsenide

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Proceedings Article | 7 March 2007 Paper

Thermally assisted electroluminescence: a viable means to generate electricity from solar or waste heat?

Jiang-Bo Wang, Yong-Hang Zhang, Shane Johnson, Bauke Heeg, Benjamin Buckner

Proceedings Volume 6461, 64610K (2007) https://doi.org/10.1117/12.708233

KEYWORDS: Photovoltaics, Solar cells, Quantum efficiency, Solar energy, Energy efficiency, Light emitting diodes, Luminescence, Electroluminescence, Active optics, Sun

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Proceedings Article | 26 February 2007 Paper

Fundamental mechanisms of electroluminescence refrigeration in heterostructure light-emitting diodes

S. Johnson, J.-B. Wang, Y.-H. Zhang, D. Ding, D. Vasileska, S.-Q. Yu

Proceedings Volume 6486, 648604 (2007) https://doi.org/10.1117/12.701301

KEYWORDS: Electroluminescence, Electrons, Radon, Light emitting diodes, Heterojunctions, Semiconductors, Gallium arsenide, Doping, Electron holes, Thermoelectric materials

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Proceedings Article | 28 February 2006 Paper

Photoluminescence refrigeration in semiconductors

S. R. Johnson, S.-Q. Yu, Y.-H. Zhang, J.-B. Wang, D. Ding

Proceedings Volume 6115, 61152C (2006) https://doi.org/10.1117/12.645359

KEYWORDS: Luminescence, Internal quantum efficiency, Semiconductors, Quantum efficiency, Gallium arsenide, Absorption, Energy efficiency, Laser energy, External quantum efficiency, Electroluminescence

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Proceedings Article | 8 December 2003 Paper

1.3-µm GaAsSb/GaAs VCSELs

Matthew Horning, Philip Dowd, Martin Adamcyk, Shane Johnson, Sergio Chaparro, Stewart Feld, Yong-Hang Zhang

Proceedings Volume 5248, (2003) https://doi.org/10.1117/12.512732

KEYWORDS: Vertical cavity surface emitting lasers, Semiconducting wafers, Reliability, Continuous wave operation, Gallium arsenide, Quantum wells, Doping, Wafer-level optics, Reflectivity

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Proceedings Article | 11 June 2003 Paper

High-mobility InAs/AlSb heterostructures for spintronics applications

Yuri Sadofyev, A. Ramamoorthy, S. Johnson, J. Bird, B. Naser, S. Chaparro, Y.-H. Zhang, Y. Cao

Proceedings Volume 5023, (2003) https://doi.org/10.1117/12.510557

KEYWORDS: Spintronics, Indium arsenide, Quantum wells, Magnetism, Heterojunctions, Gallium arsenide, Gallium antimonide, Nanostructures, Physics, Antimony

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Proceedings Article | 27 April 2000 Paper

Integration of 32x32 photodiode arrays with silicon for massively parallel optical interconnects

Philip Dowd, Daniel Docter, Shane Johnson, S. Adhiveeraraghavan, YongHang Zhang, Chang Ryu, Raenaurd Turpin, Bernhard Koelle, Jin Xu

Proceedings Volume 3952, (2000) https://doi.org/10.1117/12.384389

KEYWORDS: Photodiodes, Silicon, Metals, Optical interconnects, PIN photodiodes, Vertical cavity surface emitting lasers, Gold, Indium, Aluminum, Absorption

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Proceedings Article | 30 April 1999 Paper

Optical interconnects for high-speed data links

Chang Ryu, YongHang Zhang, Raenaurd Turpin, Shane Johnson, Philip Dowd, Parag Kelkar, Bernhard Koelle

Proceedings Volume 3631, (1999) https://doi.org/10.1117/12.348313

KEYWORDS: Vertical cavity surface emitting lasers, Silicon, Modulation, Gallium arsenide, Glasses, Indium, Optical interconnects, Mirrors, Eye, Indium gallium arsenide

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Showing 5 of 14 publications

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