An ion-enhanced atmospheric pressure plasma machining (IAPPM) method is introduced to improve the processing efficiency of SiC. The argon inductively coupled plasma is generated in designed the IAPPM machine. SF6 chosen as the reactive gas is injected into the argon plasma where SF6 is broken down into fluorine radicals. The reactive atoms are delivered onto the surface of SiC, and SiF4 is generated which is exhausted in the gaseous form. The material removal rate is increased by bringing in the energetic ions bombardment. Three linear trenches were etched onto the S-SiC sample. The etch rate is 3μm/min. The surface becomes rough after the IAPPM process.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.